scholarly journals Люминесцентные свойства высокоомного кремния, облученного тяжелыми ионами высоких энергий

Author(s):  
С.Г. Черкова ◽  
В.А. Скуратов ◽  
В.А. Володин

The float zone (high-resistance) silicon irradiated with swift heavy ions was studied by photoluminescence (PL) spectroscopy method. In addition to well-known X, W, W’, R and C lines, a broad peak (1.3 – 1.5 μm) appears in PL spectra at low-temperatures. As the irradiation dose increases from 3•10_11 to 10_13 cm-2, the PL intensity decreases by about an order of magnitude, also a narrowing of the peak with red-shift is observed.

Author(s):  
Svetlana Cherkova ◽  
Vladimir Volodin ◽  
Vladimir Skuratov ◽  
Gregory Krivyakin ◽  
Gennadiy Kamaev

The optical and structural properties of silicon irradiated with swift heavy Xe ions are investigated. In the photoluminescence (PL) spectra at low temperatures, a broad peak is observed in the range 1.3 - 1.5 μm. With an increase in the irradiation dose from 5 × 1010 to 1013 cm –2, the PL peak decreases and became narrows. Annealing at a temperature of 400° C leads to multiple signal amplification (up to 35 times).


Polymers ◽  
2021 ◽  
Vol 13 (3) ◽  
pp. 358
Author(s):  
Adil Z. Tuleushev ◽  
Fiona E. Harrison ◽  
Artem L. Kozlovskiy ◽  
Maxim V. Zdorovets

This paper presents the results of a study of polyethylene terephthalate (PET) films irradiated with Ar and Kr ions at both normal orientation and an angle of 40° to the normal. Normal irradiation was performed using Ar8+ and Kr15+ ions with an energy of 1.75 MeV/au and fluences in the range (2–500) × 1010 cm−2 for Ar8+ ions and (1.6 − 6.5) × 1010 cm−2 for Kr15+ ions. Kr ions with an energy of 1.2 MeV/au and charges of 13+, 14+, and 15+ were used for angled irradiation. For each Kr ion charge value, three fluence values were used: 5 × 1010, 1 × 1011, and 2.5 × 1011 cm−2. It is well known that irradiation of PET films by swift heavy ions results in a red shift of the UV-vis transmission spectra absorption edge. The experimental transmission spectra exhibit well-defined interference fringes, which obscure the underlying transmission response. Using an existing technique to obtain interference-free transmission curves Tα(λ) for both pristine and irradiated PET film samples, we found that S, the total radiation-induced absorption of light by the PET film, is proportional to the logarithm of the fluence F. In addition to this dependence on the irradiating fluence, we also found that the charge of the irradiating ion has a significant influence on the position of the absorption edge in the UV-vis spectra. This provides experimentally independent evidence to confirm our previous results showing that ion charge has an effect on the post-irradiation state of PET films. We present a physical interpretation of the observed absorption edge red shift in irradiated PET films as being due to the growth of extended conjugated systems via the formation of intermolecular helical structures. Our investigations into the stability of irradiation-induced effects in PET films show that comparison of UV-vis transmission spectra before and after annealing can provide information about the structure of deep traps in PET.


2014 ◽  
Vol 996 ◽  
pp. 22-26 ◽  
Author(s):  
Vladimir V. Uglov ◽  
Vladimir A. Skuratov ◽  
Tatjana Ulyanenkova ◽  
Andrei Benediktovitch ◽  
Alexander Ulyanenkov ◽  
...  

Oxide dispersive steel is a promising material for next nuclear reactors generation. Performance of this material in nuclear reactor can be modeled by means of irradiation by swift Bi ions, which are typical nuclear fusion products. Radiation damage results in microstructure alternation leading to formation of micro and macro stresses that influence the material performance. The residual stress state of ferrite matrix of the steel is investigated by XRD methodic and dependence on the irradiation dose is analyzed.


2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Miguel C. Sequeira ◽  
Jean-Gabriel Mattei ◽  
Henrique Vazquez ◽  
Flyura Djurabekova ◽  
Kai Nordlund ◽  
...  

AbstractGaN is the most promising upgrade to the traditional Si-based radiation-hard technologies. However, the underlying mechanisms driving its resistance are unclear, especially for strongly ionising radiation. Here, we use swift heavy ions to show that a strong recrystallisation effect induced by the ions is the key mechanism behind the observed resistance. We use atomistic simulations to examine and predict the damage evolution. These show that the recrystallisation lowers the expected damage levels significantly and has strong implications when studying high fluences for which numerous overlaps occur. Moreover, the simulations reveal structures such as point and extended defects, density gradients and voids with excellent agreement between simulation and experiment. We expect that the developed modelling scheme will contribute to improving the design and test of future radiation-resistant GaN-based devices.


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