Investigation of Pd|HfO-=SUB=-2-=/SUB=-|AlGaN|GaN Enhancement-Mode High Electron Mobility Transistor with Sensitization, Activation, and Electroless-Plating Approaches

2020 ◽  
Vol 54 (7) ◽  
pp. 684
Author(s):  
Y.-C. Lin ◽  
J.-S. Niu ◽  
W.-C. Liu ◽  
J.-H. Tsai
Keyword(s):  
Electroless Plating ◽  
Threshold Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Oxide Semiconductor ◽  
High Electron ◽  
Saturation Current ◽  
High Electron Mobility ◽  
High Maximum ◽  
Gate Recess

A new Pd|HfO2|AlGaN|GaN metal-oxide-semiconductor (MOS) enhancement-mode high electron mobility transistor (HEMT) is fabricated with low-temperature sensitization, activation, electroless-plating, and two-step gate-recess approaches. Experimentally, a high positive threshold voltage Vth of 1.96 V, a very low gate leakage IG of 6.3·10-8 mA/mm, a high maximum extrinsic transconductance gm,max of 75.3 mS/mm, a high maximum drain saturation current ID,max of 266.9 mA/mm, and a high ON/OFF current ratio of 7.6·107 are obtained at 300 K. Moreover, the related temperature-dependent characteristics, over temperature ranges from 300 to 500 K, are comprehensively studied. The very low temperature coefficients on gate current, drain saturation current, transconductance, and threshold voltage confirm the thermal-stable capability of the studied device. Therefore, based on these advantages, the studied Pd|HfO2|AlGaN|GaN MOS structure is suitable for the development of high-performance HEMTs. Keywords: HfO2, AlGaN|GaN, metal-oxide-semiconductor, high electron mobility transistor, electroless plating, gate recess, threshold voltage.

High-Performance AlGaN/GaN Enhancement-Mode High Electron Mobility Transistor by Two-Step Gate Recess and Electroless-Plating Approaches

2021 ◽  
Vol 13 (1) ◽  
pp. 30-35
Author(s):  
Ching-Hong Chang ◽  
Yue-Chang Lin ◽  
Jing-Shiuan Niu ◽  
Wen-Shiung Lour ◽  
Jung-Hui Tsai ◽  
...  
Keyword(s):  
Electroless Plating ◽  
Electron Mobility ◽  
High Performance ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Improved Performance ◽  
Gate Recess

In this work, an AlGaN/GaN enhancement-mode high electron mobility transistor (HEMT) with two-step gate recess and electroless plating (EP) approaches is reported. Scanning electron microscopy and atomic force microscopy surface analysis are used to analysis the related properties of the EP-gate structure. A positive threshold voltage Vthof 0.68 V is obtained for the enhancement-mode EP-HEMT. In addition, a traditional HEMT based on thermal-evaporation gate is compared for the demonstration of the studied EP-HEMT with the improved performance, such as a higher maximum drain saturation current of 228.9 mA/mm, a higher maximum transconductance of 107.2 mS/mm, a lower gate leakage current of 1.2 × 10–7 mA/mm, and a higher ON/OFF drain current ratio of 4.57 × 105.

Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices

2015 ◽  
Vol 764-765 ◽  
pp. 486-490
Author(s):  
Chih Hao Wang ◽  
Liang Yu Su ◽  
Finella Lee ◽  
Jian Jang Huang
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Saturation Current ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Large Size ◽  
Novel Design

We demonstrate a novel design of large-size device in AlGaN/GaN high-electron-mobility transistor (HEMT). Depletion mode (D-mode) HEMTs and enhancement mode (E-mode) HEMTs are fabricated in our research. The saturation current of D-mode HEMTs is over 6A. By using Cascode structure, the D-mode HEMT becomes a normally-off device efficiently, and the threshold voltage of it rises from-7V to 2V. By using BCB (Benzocyclobutene) as the passivation, the E-mode HEMT shows an excellent characteristic. Also, when the VGS of the E-mode HEMT is over 9V, it still shows a good performance.

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