scholarly journals Люминесценция пространственно упорядоченных одиночных и групп самоформирующихся Ge(Si) наноостровков, встроенных в фотонные кристаллы

Author(s):  
Ж.В. Смагина ◽  
А.В. Новиков ◽  
М.В. Степихова ◽  
В.А. Зиновьев ◽  
Е.Е. Родякина ◽  
...  

Photoluminescence (PL) properties of arrays of spatially ordered single Ge(Si) self-assembled islands, including embedded in two-dimensional photonic crystals (PhC), was studied. Incorporation of an array of ordered single islands and their groups into PhC significantly increases the intensity of their PL signal. The most pronounced increase in intensity (up to 30 times at nitrogen temperatures) is observed for an ordered array of single islands. The increase in PL intensity is associated with interaction of island emission with the radiation modes of the PhC, which is more efficient for an array of spatially ordered single islands. As result PL from single ordered Ge(Si) islands embedded in PhC was observed up to room temperature.

Author(s):  
Ж.В. Смагина ◽  
В.А. Зиновьев ◽  
Е.Е. Родякина ◽  
Б.И. Фомин ◽  
М.В. Степихова ◽  
...  

Two approaches to the integration of ordered Ge(Si) self-assembled quantum dots (QDs) into two-dimensional photonic crystals (PhC) are considered in the paper. The first approach involves the synthesis on the structured silicon surface of the ordered Ge(Si) QD array, on which PhC is then formed. In the second approach, the PhC itself serves as the template for the ordered QD growth. It is shown that varying the diameter of PhC holes in the framework of the second approach, two growth modes of QDs can be realized, when they are formed inside or outside the PhC holes. For structures with ordered QDs built into PhC, an increase in the intensity of the photoluminescence signal was detected at room temperature in the spectral range of 0.9-1.2 eV, which is associated with the interaction of the emission with the radiation modes of PhC.


Author(s):  
Ryoko Shimada ◽  
Aya Imada ◽  
Takao Koda ◽  
Toru Fujimura ◽  
Keiichi Edamatsu ◽  
...  

2013 ◽  
Vol 538 ◽  
pp. 328-331
Author(s):  
Yuan Ming Huang ◽  
Bao Gai Zhai ◽  
Qing Lan Ma

Controlling the photon propagation in materials by photonic crystals lies at the heart of quantum optics. The motivation of our work is to investigate the direct control of the photon confinement in the self-assembled two-dimensional SiO2 photonic crystals. Here we demonstrate the realization of transmitted light controls in the self-assembled two-dimensional SiO2 PCs. Our experimental results agree well with the theoretical calculations on the photonic band gaps in the spectral region of 400-1100 nm. These results present experimental evidence on the direct control of the photon confinement in the self-assembled two-dimensional SiO2 PCs.


2020 ◽  
Vol 54 (8) ◽  
pp. 975-981
Author(s):  
D. V. Yurasov ◽  
A. V. Novikov ◽  
S. A. Dyakov ◽  
M. V. Stepikhova ◽  
A. N. Yablonskiy ◽  
...  

2020 ◽  
Vol 54 (10) ◽  
pp. 1352-1359
Author(s):  
A. N. Yablonskiy ◽  
A. V. Novikov ◽  
M. V. Stepikhova ◽  
S. M. Sergeev ◽  
N. A. Baidakova ◽  
...  

RSC Advances ◽  
2019 ◽  
Vol 9 (14) ◽  
pp. 8131-8136
Author(s):  
Xinying Wang ◽  
Pingping Feng ◽  
Baiyi Shao ◽  
Fangming Cui ◽  
Xiaojing Yang

A two-dimensional (2D) colloidal crystal of core–shell-structured SiO2@LEuH spheres was prepared and showed enhanced photoluminescence at 611 nm (5D0 → 7F2).


2006 ◽  
Vol 958 ◽  
Author(s):  
Philippe Boucaud ◽  
Moustafa El Kurdi ◽  
Xiang Li ◽  
Sébastien Sauvage ◽  
Xavier Checoury ◽  
...  

ABSTRACTWe first present an analysis of the band line-up in the case of SiGe/Si quantum wells and in the case of SiGe/Si self-assembled islands. The conduction and valence band diagrams are obtained from a 30 band k.p Hamiltonian which allows to describe simultaneously conduction and valence band states. The strain field is obtained from a microscopic valence force field theory. The band edge alignment is strongly dependent on the input parameters for this heterosystem. We determine the average valence band offset from photoluminescence measurements of heterostructures grown on relaxed SiGe buffer layers. A type II band line-up is calculated for all Ge compositions in the case of two-dimensional quantum wells and SiGe/Si self-assembled islands. The 30-band formalism allows the determination of the near-infrared interband recombination energy as a function of the self-assembled island structural parameters. We then present recent results obtained by embedding SiGe/Si self-assembled islands in two-dimensional photonic crystals. The photoluminescence of GeSi islands acts as an internal probe to characterize the optical properties of silicon-based two-dimensional photonic crystals designed for the near-infrared spectral range. Cavities, defect-free photonic crystals operated at the second Bragg order and two-dimensional photonic crystals fabricated on top of one-dimensional Bragg mirrors (2D + 1D) are described. We show that, in the case of 2D +1D structures, we can control the quality factor of optical modes at the second Bragg order by matching the resonance conditions and controlling the thickness of the layers. Photonic crystals with pure Ge layers are finally described.


2003 ◽  
Vol 83 (13) ◽  
pp. 2509-2511 ◽  
Author(s):  
S. David ◽  
M. El kurdi ◽  
P. Boucaud ◽  
A. Chelnokov ◽  
V. Le Thanh ◽  
...  

Author(s):  
Dmitry V Yurasov ◽  
Artem N Yablonskiy ◽  
Natalya A Baidakova ◽  
Mikhail V Shaleev ◽  
Ekaterina E Rodyakina ◽  
...  

Abstract More than an order of magnitude enhancement of the room-temperature photoluminescence (PL) signal from rather thick Ge layers grown on Si(001) was obtained by utilization of the two-dimensional photonic crystals (PhC). A set of PhCs with different periods and filling factors was fabricated and studied using a micro-PL spectroscopy. Optical features of the fabricated PhCs were also theoretically modeled using a rigorously coupled wave analysis which allowed to bring the observed peaks in the PL response into correlation with the different modes of PhC. In particular, we were able to associate the well-resolved peaks in the PL spectra with the optically active modes of the PhCs. The obtained results proved the possibility of using a homogeneously distributed active medium in PhCs without the formation of specially designed cavities in order to redistribute the internal emitted light into the required modes and efficiently extract it to the far field. The relative simplicity and higher tolerance to fabrication imperfections, as well as the large working area of such kind of PhCs as compared to PhCs with microcavities can be advantageous for creating a PhC-based Si-compatible light source for the telecom band.


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