scholarly journals XXIV Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 10-13 марта 2020 г. Влияние граничных условий на высокочастотную электропроводность тонкого проводящего слоя в продольном магнитном поле

2020 ◽  
Vol 54 (9) ◽  
pp. 846
Author(s):  
И.А. Кузнецова ◽  
О.В. Савенко ◽  
П.А. Кузнецов
Keyword(s):  
High Frequency ◽  
Longitudinal Magnetic Field ◽  
Chemical Potential ◽  
Theoretical Calculations ◽  
Mean Free Path ◽  
Thin Metal Film ◽  
Charge Carriers ◽  
Field Frequency ◽  
Electric Field Frequency ◽  
Degenerate Electron Gas

The problem of the high-frequency conductivity of a thin conductive layer in a longitudinal magnetic field is solved in terms of kinetic approach taking into account diffuse-mirror boundary conditions. Specularity coefficients of layer surfaces are assumed to be different. An analytical expression is derived for dimensionless integral conductivity as a function of dimensionless parameters: layer thickness, electric field frequency, magnetic induction, chemical potential and surface specularity coefficients. The limiting cases of a degenerate and non-degenerate electron gas are considered. A comparative analysis of theoretical calculations with experimental data is carried out. The method to determine specularity coefficients and mean free path of charge carriers from the longitudinal magnetoresistance of a thin metal film is illustrated.

scholarly journals Квантовый транспорт в полупроводниковом нанослое с учетом поверхностного рассеяния носителей заряда

2021 ◽  
Vol 55 (9) ◽  
pp. 789
Author(s):  
И.А. Кузнецова ◽  
О.В. Савенко ◽  
Д.Н. Романов
Keyword(s):  
Energy Surface ◽  
Chemical Potential ◽  
Silicon Layer ◽  
Transport Processes ◽  
Charge Carriers ◽  
Axis Parallel ◽  
Ellipsoid Of Revolution ◽  
De Broglie Wavelength ◽  
Analytical Expressions ◽  
Degenerate Electron Gas

The problem of the conductivity of a thin conductive nanolayer is solved taking into account the quantum theory of transport processes. The layer thickness can be comparable to or less than the de Broglie wavelength of charge carriers. The constant-energy surface has the form of an ellipsoid of revolution with the main axis parallel to the layer plane. Analytical expressions are obtained for the conductivity tensor components as a function of dimensionless thickness, chemical potential, ellipticity parameter, and surface roughness parameters. The conductivity analysis for the limiting cases of a degenerate and non-degenerate electron gas are conducted. The results are compared with known experimental data for a silicon layer.

Formation of Regular Domain Structures in Quenched Ferroelectrics Under the Influence of an External High-frequency Electric Field

2019 ◽  
Vol 9 (3) ◽  
pp. 344-352 ◽  
Author(s):  
L.I. Stefanovich ◽  
O.Y. Mazur ◽  
V.V. Sobolev
Keyword(s):  
Lithium Niobate ◽  
Electric Field ◽  
Domain Structure ◽  
High Frequency ◽  
Evolution Equations ◽  
Regular Domain ◽  
Field Frequency ◽  
Domain Structures ◽  
Alternating Electric Field ◽  
Lithium Niobate Crystals

Introduction: Within the framework of the phenomenological theory of phase transitions of the second kind of Ginzburg-Landau, the kinetics of ordering of a rapidly quenched highly nonequilibrium domain structure is considered using the lithium tantalate and lithium niobate crystals as an example. Experimental: Using the statistical approach, evolution equations describing the formation of the domain structure under the influence of a high-frequency alternating electric field in the form of a standing wave were obtained. Numerical analysis has shown the possibility of forming thermodynamically stable mono- and polydomain structures. It turned out that the process of relaxation of the system to the state of thermodynamic equilibrium can proceed directly or with the formation of intermediate quasi-stationary polydomain asymmetric phases. Results: It is shown that the formation of Regular Domain Structures (RDS) is of a threshold character and occurs under the influence of an alternating electric field with an amplitude less than the critical value, whose value depends on the field frequency. The conditions for the formation of RDSs with a micrometer spatial scale were determined. Conclusion: As shown by numerical studies, the RDSs obtained retain their stability, i.e. do not disappear even after turning off the external electric field. Qualitative analysis using lithium niobate crystals as an example has shown the possibility of RDSs formation in high-frequency fields with small amplitude under resonance conditions

scholarly journals Temperature Dependence of Hall Mobility AndCarrier Concentration of pb0.55S0.45 Films

2009 ◽  
Vol 6 (1) ◽  
pp. 129-134
Author(s):  
Baghdad Science Journal
Keyword(s):  
Hall Mobility ◽  
Room Temperature ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Life Time ◽  
Mean Free Path ◽  
Charge Carriers ◽  
Evaporation Technique ◽  
Carrier Life Time ◽  
Type Conduction

Measurements of Hall effect properties at different of annealing temperature have been made on polycrystalline Pb0.55S0.45 films were prepared at room temperature by thermal evaporation technique under high vacuum 4*10-5 torr . The thickness of the film was 2?m .The carrier concentration (n) was observed to decrease with increasing the annealing temperature. The Hall measurements showed that the charge carriers are electrons (i.e n-type conduction). From the observed dependence on the temperature, it is found that the Hall mobility (µH), drift velocity ( d) carrier life time ( ), mean free path (?) were increased with increasing annealing temperature

Modified Morris-Lecar neuron model: Effects of very low frequency electric fields and of magnetic fields on the local and network dynamics of an excitable media

2021 ◽  
Author(s):  
Karthikeyan Rajagopal ◽  
Irene Moroz ◽  
Balamurali Ramakrishnan ◽  
Anitha Karthikeyan ◽  
Prakash Duraisamy
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Electric Field ◽  
Neuron Model ◽  
Low Noise ◽  
Spiral Waves ◽  
Excitable Media ◽  
Field Frequency ◽  
Electric And Magnetic Fields ◽  
Electric Field Frequency

Abstract A Morris-Lecar neuron model is considered with Electric and Magnetic field effects where the electric field is a time varying sinusoid and magnetic field is simulated using an exponential flux memristor. We have shown that the exposure to electric and magnetic fields have significant effects on the neurons and have exhibited complex oscillations. The neurons exhibit a frequency-locked state for the periodic electric field and different ratios of frequency locked states with respect to the electric field frequency is also presented. To show the impact of the electric and magnetic fields on network of neurons, we have constructed different types of network and have shown the network wave propagation phenomenon. Interestingly the nodes exposed to both electric and magnetic fields exhibit more stable spiral waves compared to the nodes exhibited only to the magnetic fields. Also, when the number of layers are increased the range of electric field frequency for which the layers exhibit spiral waves also increase. Finally the noise effects on the field affected neuron network are discussed and multilayer networks supress spiral waves for a very low noise variance compared against the single layer network.

Determination of the Inelastic Mean-Free-Path and Mean Inner Potential for AlAs and GaAs Using Off-Axis Electron Holography and Convergent Beam Electron Diffraction

2007 ◽  
Vol 13 (5) ◽  
pp. 329-335 ◽  
Author(s):  
Suk Chung ◽  
David J. Smith ◽  
Martha R. McCartney
Keyword(s):  
Electron Diffraction ◽  
Theoretical Calculations ◽  
Mean Free Path ◽  
High Energy ◽  
Convergent Beam Electron Diffraction ◽  
Electron Holography ◽  
Beam Electron ◽  
The Mean ◽  
Convergent Beam ◽  
Inelastic Mean Free Path

The mean-free-paths for inelastic scattering of high-energy electrons (200 keV) for AlAs and GaAs have been determined based on a comparison of thicknesses as measured by electron holography and convergent-beam electron diffraction. The measured values are 77 ± 4 nm and 67 ± 4 nm for AlAs and GaAs, respectively. Using these values, the mean inner potentials of AlAs and GaAs were then determined, from a total of 15 separate experimental measurements, to be 12.1 ± 0.7 V and 14.0 ± 0.6 V, respectively. These latter measurements show good agreement with recent theoretical calculations within experimental error.

High frequency quasiparticle damping in a degenerate electron gas

1975 ◽  
Vol 19 (1-4) ◽  
pp. 349-350
Author(s):  
Shyamalendu M. Bose ◽  
Joseph Fitchek
Keyword(s):  
High Frequency ◽  
Electron Gas ◽  
Degenerate Electron ◽  
Degenerate Electron Gas
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