Эпитаксиальные квантовые точки InGaAs в матрице Al-=SUB=-0.29-=/SUB=-Ga-=SUB=-0.71-=/SUB=-As: интенсивность и кинетика люминесценции в ближнем поле серебряных наночастиц

AbstractQuantum dots of indium gallium arsenide buried in a thin layer of aluminum gallium arsenide were grown by means of molecular-beam epitaxy. The influence of silver nanoparticles grown on the surface of the semiconductor structure by vacuum thermal evaporation on photoluminescence of quantum dots was investigated. Photoluminescence spectra of quantum dots were obtained under stationary and pulsed excitation. The influence of silver nanoparticles exhibiting plasmon resonances on spectral distribution and kinetics of luminescence of the epitaxial quantum dots was studied.

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Indium Gallium Arsenide Based Non-Volatile Memory Devices with Site-Specific Self-Assembled Germanium Quantum Dot Gate

MRS Proceedings ◽

10.1557/proc-1250-g01-05 ◽

2010 ◽

Vol 1250 ◽

Author(s):

Pik-Yiu Chan ◽

Mukesh Gogna ◽

Ernesto Suarez ◽

Fuad Alamoody ◽

Supriya Karmakar ◽

...

Keyword(s):

Quantum Dots ◽

Gallium Arsenide ◽

Indium Gallium Arsenide ◽

Field Effect Transistors ◽

Memory Device ◽

Floating Gate ◽

Gate Insulator ◽

Non Volatile Memory ◽

Indium Gallium ◽

Volatile Memory

AbstractThis paper presents the implementation of indium gallium arsenide field-effect transistors (InGaAs FETs) as non-volatile memory using lattice-matched II-VI gate insulator and quantum dots of GeOx-cladded Ge as the floating gate. Studies have been done to show the ability of II-VI materials to act as a tunneling gate material for InGaAs based FETs, and GeOx-cladded Ge quantum dots having the ability to store charges in the floating gate of a memory device. Proposed structure of the InGaAs device is presented.

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Kinetics of indium arsenide quantum dots formation on gallium arsenide (001) substrate

2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices ◽

10.1109/edm.2009.5173921 ◽

2009 ◽

Author(s):

Anna A. Lyamkina ◽

Dmitriy V. Dmitriev ◽

Sergey P. Moshchenko ◽

Alexander I. Toropov

Keyword(s):

Quantum Dots ◽

Gallium Arsenide ◽

Indium Arsenide ◽

Kinetics Of

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EFFECTS OF ANTIMONY FLUX ON MORPHOLOGY AND PHOTOLUMINESCENCE SPECTRA OF GaSb QUANTUM DOTS FORMED ON GaAs BY DROPLET EPITAXY

Journal of Nonlinear Optical Physics & Materials ◽

10.1142/s0218863510005777 ◽

2010 ◽

Vol 19 (04) ◽

pp. 819-826 ◽

Cited By ~ 4

Author(s):

T. KAWAZU ◽

T. NODA ◽

T. MANO ◽

M. JO ◽

H. SAKAKI

Keyword(s):

Quantum Dots ◽

Microscope Study ◽

Molecular Beam ◽

Broad Peak ◽

Droplet Epitaxy ◽

Wetting Layer ◽

Photoluminescence Spectra ◽

Coalescence Process ◽

Strong Luminescence

We investigated effects of the antimony flux on GaSb quantum dots (QDs) formed by droplet epitaxy. Ga droplets were first formed on GaAs and exposed to Sb4 molecular beam at 200 °C, where the flux PSb of Sb beam was varied from 2.4 to 12.8 × 10-7 Torr. The samples were then annealed for 2 minutes under the Sb flux. An atomic microscope study showed that the diameter of GaSb QDs increases and the density decreases, as the Sb flux PSb is increased. This indicates that the coalescence process of GaSb QDs occurs and is accelerated by the increase of the Sb flux. In a photoluminescence (PL) study, we observed a broad peak of GaSb QDs in all samples, while a strong luminescence of a wetting layer (WL)-like structure was found only in the samples prepared with the high Sb flux. This suggests that the PL of WL is controllable by adjusting the flux PSb of Sb beam.

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