6 Watt Segmented Power Generator Modules using Bi2Te3 and (InGaAs)1-x(InAlAs)x Elements Embedded with ErAs Nanoparticles

We report the fabrication and characterization of segmented element power generator modules of 16 x 16 thermoelectric elements consisting of 0.8 mm thick Bi2Te3 and 50 μm thick ErAs:(InGaAs)1-x(InAlAs)x with 0.6% ErAs by volume. Erbium Arsenide metallic nanoparticles are incorporated to create scattering centers for middle and long wavelength phonons, and to form local potential barriers for electron filtering. The thermoelectric properties of ErAs:(InGaAs)1-x(InAlAs)x were characterized in terms of electrical conductivity and Seebeck coefficient from 300 K up to 830 K. Generator modules of Bi2Te3 and ErAs:(InGaAs)1-x(InAlAs)x segmented elements were fabricated and an output power of 6.3 W was measured. 3D finite modeling shows that the performance of thermoelectric generator modules can further be enhanced by the improvement of the thermoelectric properties of the element materials, and reducing the electrical and thermal parasitic losses.

Segmented Power Generator Modules of Bi2Te3 and ErAs:InGaAlAs Embedded with ErAs Nanoparticles

We report the fabrication and characterization of segmented element power generator modules of 254 thermoelectric elements. The element is 1 mm × 1 mm in area, which consists of 300 μm thickness Bi2Te3 and 50 μm thickness ErAs:(InGaAs)1-x(InAlAs)x, so that each segment can work at different temperature ranges. Erbium arsenide metallic nanoparticles are incorporated to create scattering centers for middle and long wavelength phonons, provide charge carriers, and form local Schottky barriers for electron filtering. The thermoelectric properties of ErAs:InGaAlAs were characterized by variable temperature measurements of thermal conductivity, electrical conductivity and Seebeck coefficient from 300 K to 600 K. Generator modules of Bi2Te3 and ErAs:InGaAlAs segmented elements were fabricated and an output power over 5.5 W was measured. The performance of the thermoelectric generator modules can further be improved by improving the thermoelectric properties of the element material, and reducing the electrical and thermal parasitic losses.

400 element ErAs:InGaAs/InGaAlAs superlattice power generator

ABSTRACTWe report the fabrication and characterization of thin film power generators composed 400 p- and n-type ErAs:InGaAs/InGaAlAs superlattice thermoelectric elements. The thermoelectric elements incorporate erbium arsenide metallic nanoparticles into the semiconductor superlattice structure to provide charge carriers and create scattering centers for phonons. 10 µm p- and n-type InGaAs/InGaAlAs superlattices with embedded ErAs nano-particles were grown on InP substrates using molecular beam epitaxy. Thermal conductivity values were measured using the 3ω method and cross-plane Seebeck coefficients were determined using Seebeck device test patterns. 400 element ErAs:InGaAs/InGaAlAs thin film power generators were fabricated from superlattice elements 10 µm thick and 200 µm × 200 µm in area. The output power was 4.7 milliwatts for an external electrical load resistor of 150 Ω at about 80 K temperature difference drop across the generator. We discuss the limitations to the generator's performance and provide suggestions for further improvement.

HYBRIDIZATION BETWEEN 4f-5d STATES IN ErAs(100)

Generally in both elemental and compound rare earth systems, the 4f levels are treated as core states with little interaction with the 5d hybrid conduction and valence band states. In the present study, the band dispersions of the rare-earth pnictide erbium arsenide ( ErAs ) are observed to be perturbed from this expectation. Both photoemission symmetry selection rules and ab initio calculations provide evidences of the 4f - 5d hybridization. This finding is also supported by the f–f resonant transition excitation energy shifts in characteristic electron-energy-loss spectroscopy (EELS).

Equilibrium Structure and Schottky Barriers at Eras/Gaas Interfaces

ABSTRACTThe equilibrium structures as well as the electronic Schottky barriers for (100) Erbium-Arsenide/Gallium-Arsenide (ErAs/GaAs) arsenic and gallium terminated interfaces have been determined by ab-initio calculations using the local-density approximation and a full-potential linear-muffin-tin-orbital method. In both cases the arsenic sublattice was chosen to be continuous across the interface in accordance with experiments on Rutherford backscattering channeling. Band structures, densities of states, and charge density distributions were also determined for the interfaces. The comparison of the total supercell energies reveals that the gallium terminated (chain) interface is more energetically stable than the arsenic terminated (shadow) interface. It also shows that the equilibrium interface separation for the arsenic terminated interface corresponds to an ideal structure when arsenic forms undistorted face-centered cubic lattice. The separation in the gallium terminated interface is quite substantial and is 60% larger than that of the ideal situation. The model also predicts that no buckling of the ErAs interface monolayer will occur for either structure. The computed Schottky barriers for holes (after a semi-empirical quasiparticle self-energy correction) are 0.6 eV for the chain interface and 0.4 eV for the shadow interface.

Erbium Doped Gallium Arsenide a Self-Organising Low Dimensional System

ABSTRACTThe growth of erbium doped gallium arsenide by MBE at normal substrate temperatures (∼580°C) is constrained by a solubility limit of 8×1017 cm−3. This is much less than is desirable for optical emitters using the forbidden 4f transitions of Er3+ to produce radiation at 1.54μm. We have developed an MBE technique where it is possible to produce spherical mesoscopic precipitates containing erbium as a matrix element within the gallium arsenide. Structural and analytical studies indicate that the precipitate is cubic (rock salt) erbium arsenide. The physical size of the precipitates is self limiting as a result of surface migration occurring during MBE growth. By adjusting the growth conditions it is possible to produce an array of uniform erbium arsenide quantum dots of a size chosen from the range 10-20Å. The dot density can be varied by changing the erbium flux.