Контракция микроволнового разряда в реакторе для газофазного осаждения алмаза

AbstractIt was found that in a hydrogen-methane mixture in microwave plasma reactor for diamond deposition, there is a threshold pressure after which the contraction of microwave discharge occurs. The results of measurements of gas temperature and spatial distributions of optical emission intensity of discharge are presented. The mechanism of discharge contraction is discussed.

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Modelling radiative properties of participating species in a microwave plasma reactor for diamond deposition

Journal of Physics Conference Series ◽

10.1088/1742-6596/550/1/012050 ◽

2014 ◽

Vol 550 ◽

pp. 012050 ◽

Cited By ~ 1

Author(s):

S Prasanna ◽

Ph Rivière ◽

A Soufiani

Keyword(s):

Microwave Plasma ◽

Plasma Reactor ◽

Radiative Properties ◽

Diamond Deposition

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Single Crystal CVD Diamond growth and characterizations

MRS Proceedings ◽

10.1557/proc-0956-j07-02 ◽

2006 ◽

Vol 956 ◽

Cited By ~ 1

Author(s):

Nicolas Olivier Tranchant ◽

Dominique Tromson ◽

Zdenek Remes ◽

Licinio Rocha ◽

Milos Nesladek ◽

...

Keyword(s):

Single Crystal ◽

Microwave Plasma ◽

Plasma Reactor ◽

Optical Emission ◽

Cvd Diamond ◽

Diamond Growth ◽

Photocurrent Spectroscopy ◽

Excited Species ◽

Single Crystal Diamond

ABSTRACTDue to its radiation harness, single crystal CVD diamond is a remarkable material for the construction of detectors used in hadron physics and for medical therapy. In this work, single crystal CVD diamond plates were grown in a microwave plasma reactor, using home design substrate holder and a relatively high pressure. Optical Emission Spectroscopy was employed during the MW-PECVD growth to characterize excited species present in the plasma and to detect the presence of residual gases such as nitrogen which is unsuitable for detector's applications.The samples were characterized using various methods such as Raman spectroscopy, photoluminescence (PL), photocurrent spectroscopy, Raman mapping, birefringence microscopy, optical microscopy and also AFM. The best sample, exhibits a FWHM for the 1332 cm−1 Raman peak about 1.6 cm−1. Room temperature PL spectra showed no N–related luminescence, confirming the high quality of the grown single crystal diamond.

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Effects of gas flow rate on diamond deposition in a microwave plasma reactor

Thin Solid Films ◽

10.1016/j.tsf.2006.08.007 ◽

2006 ◽

Vol 515 (4) ◽

pp. 1970-1975 ◽

Cited By ~ 24

Author(s):

W. Chen ◽

X. Lu ◽

Q. Yang ◽

C. Xiao ◽

R. Sammynaiken ◽

...

Keyword(s):

Flow Rate ◽

Gas Flow ◽

Microwave Plasma ◽

Plasma Reactor ◽

Gas Flow Rate ◽

Diamond Deposition

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Simultaneous Synthesis and Nitrogen Doping of Free-Standing Graphene Applying Microwave Plasma

Materials ◽

10.3390/ma13184213 ◽

2020 ◽

Vol 13 (18) ◽

pp. 4213

Author(s):

D. Tsyganov ◽

N. Bundaleska ◽

J. Henriques ◽

E. Felizardo ◽

A. Dias ◽

...

Keyword(s):

Microwave Plasma ◽

Optical Emission ◽

Single Step ◽

Gas Temperature ◽

Step Method ◽

Free Standing ◽

Theoretical Predictions ◽

Reactor Geometry ◽

Nitrogen Doped Graphene ◽

Doped Graphene

An experimental and theoretical investigation on microwave plasma-based synthesis of free-standing N-graphene, i.e., nitrogen-doped graphene, was further extended using ethanol and nitrogen gas as precursors. The in situ assembly of N-graphene is a single-step method, based on the introduction of N-containing precursor together with carbon precursor in the reactive microwave plasma environment at atmospheric pressure conditions. A previously developed theoretical model was updated to account for the new reactor geometry and the nitrogen precursor employed. The theoretical predictions of the model are in good agreement with all experimental data and assist in deeper understanding of the complicated physical and chemical process in microwave plasma. Optical Emission Spectroscopy was used to detect the emission of plasma-generated ‘‘building units’’ and to determine the gas temperature. The outlet gas was analyzed by Fourier-Transform Infrared Spectroscopy to detect the generated gaseous by-products. The synthesized N-graphene was characterized by Scanning Electron Microscopy, Raman, and X-ray photoelectron spectroscopies.

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Gas temperature measurements in a microwave plasma by optical emission spectroscopy under single-wall carbon nanotube growth conditions

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/41/9/095206 ◽

2008 ◽

Vol 41 (9) ◽

pp. 095206 ◽

Cited By ~ 13

Author(s):

R K Garg ◽

T N Anderson ◽

R P Lucht ◽

T S Fisher ◽

J P Gore

Keyword(s):

Carbon Nanotube ◽

Emission Spectroscopy ◽

Optical Emission Spectroscopy ◽

Microwave Plasma ◽

Optical Emission ◽

Growth Conditions ◽

Gas Temperature ◽

Single Wall Carbon ◽

Carbon Nanotube Growth ◽

Nanotube Growth

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OES Diagnostics of HMDSO/O2/CF4 Microwave Plasma for SiOCxFy Films Deposition

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.227.152 ◽

2011 ◽

Vol 227 ◽

pp. 152-155 ◽

Cited By ~ 1

Author(s):

Rayene Chabane ◽

Salah Sahli ◽

Azziz Zenasni ◽

Patrice Raynaud ◽

Yvan Segui

Keyword(s):

Gas Flow ◽

Optical Emission Spectroscopy ◽

Electron Cyclotron Resonance ◽

Microwave Plasma ◽

Plasma Reactor ◽

Optical Emission ◽

Plasma Diagnostic ◽

Flow Ratio ◽

Gas Flow Ratio ◽

Deposited Films

SiOF like films have been elaborated in microwave excited DECR plasma reactor (Distributed Electron Cyclotron Resonance) from a mixture of oxygen-hexamethyldisiloxane (HMDSO/O2) and CF4. The fluorine contents in the precursor mixture were adjusted by varying the CF4 gas flow ratio in the range of 10% - 70%. Optical emission spectroscopy (OES) and Fourier transform infrared (FTIR) have been used for the plasma diagnostic and the deposited films structure analysis, respectively. Actinometric technique was used to find trends in the concentrations of species present in the plasma. A large number of species have been detected, such as F, Si, O, C and H. Depending on the gas mixture composition, FTIR spectra revealed the presence of several chemical bonds such as Si-F and Si-O.

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Modelling of low-temperature/large-area distributed antenna array microwave-plasma reactor used for nanocrystalline diamond deposition

The European Physical Journal Applied Physics ◽

10.1051/epjap/2017170238 ◽

2018 ◽

Vol 81 (1) ◽

pp. 10804 ◽

Cited By ~ 1

Author(s):

Fabien Bénédic ◽

Benoit Baudrillart ◽

Jocelyn Achard

Keyword(s):

Low Temperature ◽

Antenna Array ◽

Microwave Plasma ◽

Plasma Reactor ◽

Radial Profile ◽

Chemical Vapor ◽

Gas Temperature ◽

Large Area ◽

Microwave Source ◽

Distributed Antenna

In this paper we investigate a distributed antenna array Plasma Enhanced Chemical Vapor Deposition system, composed of 16 microwave plasma sources arranged in a 2D matrix, which enables the growth of 4-in. diamond films at low pressure and low substrate temperature by using H2/CH4/CO2 gas chemistry. A self-consistent two-dimensional plasma model developed for hydrogen discharges is used to study the discharge behavior. Especially, the gas temperature is estimated close to 350 K at a position corresponding to the substrate location during the growth, which is suitable for low temperature deposition. Multi-source discharge modeling evidences that the uniformity of the plasma sheet formed by the individual plasmas ignited around each elementary microwave source strongly depends on the distance to the antennas. The radial profile of the film thickness homogeneity may be thus linked to the local variations of species density.

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