Effects of gas flow rate on diamond deposition in a microwave plasma reactor

2006 ◽  
Vol 515 (4) ◽  
pp. 1970-1975 ◽  
Author(s):  
W. Chen ◽  
X. Lu ◽  
Q. Yang ◽  
C. Xiao ◽  
R. Sammynaiken ◽  
...  
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Microwave Plasma ◽  
Plasma Reactor ◽  
Gas Flow Rate ◽  
Diamond Deposition

Degradation of Organophosphorus Pesticide in a Packed-Bed Plasma Reactor: Effects of Operating Parameters and Kinetics Study

2013 ◽  
Vol 781-784 ◽  
pp. 1637-1645 ◽  
Author(s):  
Ting Jun Ma ◽  
Yi Qing Xu
Keyword(s):  
Removal Efficiency ◽  
Flow Rate ◽  
Gas Flow ◽  
Plasma Reactor ◽  
Organophosphorus Pesticide ◽  
Packed Bed ◽  
Pulse Frequency ◽  
Gas Flow Rate ◽  
Peak Voltage ◽  
Initial Concentration

The degradation effectiveness and reaction kinetics of representative organophosphorus (OP) pesticide in a packed-bed plasma reactor have been studied. Important parameters, including peak voltage, pulse frequency, gas-flow rate, initial concentration, diameter of catalyst particles, and thickness of catalyst bed which influences the removal efficiency, were investigated. Experimental results indicated that rogor removal efficiency as high as 80% can be achieved at 35 kV with the gas flow rate of 800 mL/min and initial concentration of 11.2 mg/m3.The removal efficiency increased with the increase of pulsed high voltage, and pulse frequency, the decrease of the diameter of catalyst particles and the thickness of catalyst bed. Finally, a model was established to predict the degradation of the rogor, which generally can simulate the experimental measurements to some degree.

Fabrication of Nitride Thin Films on Si Substrates by Atomic Layer Deposition Technique

MRS Advances ◽  
2018 ◽  
Vol 3 (3) ◽  
pp. 165-170
Author(s):  
Shumpei Ogawa ◽  
Tatsuya Kuroda ◽  
Ryuga Koike ◽  
Hiroki Ishizaki
Keyword(s):  
Atomic Layer Deposition ◽  
Flow Rate ◽  
Gas Flow ◽  
Microwave Plasma ◽  
Atomic Layer ◽  
Plasma Power ◽  
Gas Flow Rate ◽  
Nitrogen Gas ◽  
Nitrogen Radical ◽  
Atomic Layer Deposition Technique

AbstractRecently, Plasma Assisted Atomic Layer Deposition Technique will easily control the thickness and the composition of semiconductor films. The radical generated by using the plasma techniques, gave the decrease of the defect into the semiconductor films. In this investigation, the relationship between microwave plasma power, nitrogen gas flow rate and concentration of generated nitrogen radical, was evaluated. At the first, Plasma emission spectrum at microwave plasma power (0 to 400W) was measured using a mixed 200sccm argon gas and 10sccm nitrogen gas. Next, the plasma emission spectrum was measured in the mixing of nitrogen gas flow rate (0 to 40sccm) with 200sccm argon gas flow rate. At that time, the microwave plasma power was set to 200W. Nitrogen radical spectrum were identified from all the emission spectrum, and the nitrogen radical intensity was calculated. As a result, the nitrogen radical intensity became the largest at 200sccm argon gas flow rate and 10sccm nitrogen gas flow rate. In addition, the nitrogen radical intensity increased in proportion to the microwave plasma power. The concentration of generated nitrogen radical could be controlled by changing the microwave plasma power and the nitrogen gas flow rate. Mentioned above, nitride thin films will be obtained on Si Substrates by microwave generated remote plasma assisted atomic layer deposition technique.

OPTIMIZATION OF NON THERMAL PLASMA REACTOR PERFORMANCE FOR THE DECOMPOSITION OF XYLENE

2016 ◽  
Vol 78 (8) ◽  
Author(s):  
Nor Faraliana Shazwani Nor Azmi ◽  
Abdullahi Mohammed Evuti ◽  
Mohd Ariffin Abu Hassan ◽  
R. K. Raja Ibrahim
Keyword(s):  
Flow Rate ◽  
Thermal Plasma ◽  
Applied Voltage ◽  
Gas Flow ◽  
Plasma Reactor ◽  
Gas Flow Rate ◽  
Reactor Performance ◽  
Model Predictions ◽  
Non Thermal Plasma ◽  
Discharge Gap

Non Thermal Plasma (NTP) is an emerging method used for the decomposition of volatile organic compounds (VOCs). This research focuses on the optimization of NTP reactor performance for decomposition of xylene from wastewater using response surface methodology (RSM) by operating the NTP reactor at applied voltage of 12-15 kV, discharge gap of 2.0-3.0 cm and gas flow rate of 2.0-5.0 L/min. An optimum xylene removal efficiency of 81.98% was obtained at applied voltage 15kV, discharge gap 2.09cm and gas flow rate at 2.36 L/min. The experimental removal efficiencies and model predictions were in close agreement with an error of 0.63%. 

Quality of diamond wafers grown by microwave plasma CVD: effects of gas flow rate

1999 ◽  
Vol 8 (2-5) ◽  
pp. 189-193 ◽  
Author(s):  
V Ralchenko ◽  
I Sychov ◽  
I Vlasov ◽  
A Vlasov ◽  
V Konov ◽  
...  
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Microwave Plasma ◽  
Gas Flow Rate ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd

scholarly journals REDUCING THE DETECTION LIMITS OF SPECTROMETER WITH NITROGEN MICROWAVE PLASMA «GRAND-SVCH»

2020 ◽  
Vol 8 (1) ◽  
pp. 108-117
Author(s):  
Oleg V. Komin ◽  
Oleg V. Pelipasov
Keyword(s):  
Excitation Energy ◽  
Flow Rate ◽  
Gas Flow ◽  
Microwave Plasma ◽  
Detection Limits ◽  
Spectral Lines ◽  
Excitation Source ◽  
Gas Flow Rate ◽  
Excitation Energies ◽  
Varying Parameters

The article presents the results of a study of the effect of the power supplied to the microwave plasma and the nebulizer gas flow rate on the detection limits of the spectrometer with nitrogen microwave plasma «Grand-SVCH». It is shown that a change of the spectral lines intensity of the elements being determined with varying parameters of the spectra excitation source is related to their excitation energy. The maximum intensities of the lines are achieved at a power of 1700 W and a nebulizer gas flow of 0,4 l/min and 0,6 l/min for lines with excitation energies of 4-15 eV and 3,5-4 eV, respectively. Using the obtained values of the parameters of the excitation source of the spectra allows reducing the detection limits of elements by 1,5-4 times.

scholarly journals Effects of Gas Flow on Spectral Properties of Plasma Jet Induced by Microwave

2018 ◽  
Vol 15 (1) ◽  
pp. 81-86 ◽  
Author(s):  
Baghdad Science Journal
Keyword(s):  
Flow Rate ◽  
Applied Voltage ◽  
Gas Flow ◽  
Microwave Plasma ◽  
Plasma Jet ◽  
Gas Temperature ◽  
Gas Flow Rate ◽  
Argon Gas ◽  
Jet Length ◽  
Maximum Value

In this paper, a construction microwave induced plasma jet(MIPJ) system was used to produce a non-thermal plasma jet at atmospheric pressure, at standard frequency of 2.45 GHz and microwave power of 800 W. The working gas Argon (Ar) was supplied to flow through the torch with adjustable flow rate using flow meter regulator. The influence of the MIPJ parameters such as applied voltage and argon gas flow rate on macroscopic microwave plasma parameters were studied. The macroscopic parameters results show increasing of microwave plasma jet length with increasing of applied voltage, argon gas flow rate where the plasma jet length exceed 12 cm as maximum value. While the increasing of argon gas flow rate will cause increasing into the argon gas temperature, where argon gas temperature the exceed 350 ? as maximum value and study the effect of gas flow rate on the optical properties

EFFECTS OF METHANE GAS FLOW RATE ON THE OPTOELECTRICAL PROPERTIES OF NITROGENATED CARBON THIN FILMS GROWN BY SURFACE WAVE MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

2006 ◽  
Vol 13 (05) ◽  
pp. 585-592
Author(s):  
M. RUSOP ◽  
S. ABDULLAH ◽  
A. M. M. OMER ◽  
S. ADHIKARI ◽  
T. SOGA ◽  
...  
Keyword(s):  
Surface Wave ◽  
Electrical Properties ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Gas Flow Rate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

We have studied the influence of the methane gas ( CH 4) flow rate on the composition and structural and electrical properties of nitrogenated amorphous carbon ( a - C : N ) films grown by surface wave microwave plasma chemical vapor deposition (SWMP-CVD) using Auger electron spectroscopy, X-ray photoelectron spectroscopy, UV-visible spectroscopy, four-point probe and two-probe method resistance measurement. The photoelectrical properties of a - C : N films were also studied. We have succeeded to grow a - C : N films using a novel method of SWMP-CVD at room temperature and found that the deposition rate, bonding and optical and electrical properties of a - C : N films are strongly dependent on the CH 4 gas sources, and the a - C : N films grown at higher CH 4 gas flow rate have relatively high electrical conductivity for both cases of in dark and under illumination condition.

scholarly journals Atmospheric Pressure Microwave Plasma Jet for Organic Thin Film Deposition

Polymers ◽  
2020 ◽  
Vol 12 (2) ◽  
pp. 354 ◽  
Author(s):  
Mehrnoush Narimisa ◽  
František Krčma ◽  
Yuliia Onyshchenko ◽  
Zdenka Kozáková ◽  
Rino Morent ◽  
...  
Keyword(s):  
Flow Rate ◽  
Atmospheric Pressure ◽  
Gas Flow ◽  
Microwave Plasma ◽  
Plasma Jet ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Organic Thin Film ◽  
Gas Flow Rate ◽  
Homogeneous Surface

In this work, the potential of a microwave (MW)-induced atmospheric pressure plasma jet (APPJ) in film deposition of styrene and methyl methacrylate (MMA) precursors is investigated. Plasma properties during the deposition and resultant coating characteristics are studied. Optical emission spectroscopy (OES) results indicate a higher degree of monomer dissociation in the APPJ with increasing power and a carrier gas flow rate of up to 250 standard cubic centimeters per minute (sccm). Computational fluid dynamic (CFD) simulations demonstrate non-uniform monomer distribution near the substrate and the dependency of the deposition area on the monomer-containing gas flow rate. A non-homogeneous surface morphology and topography of the deposited coatings is also observed using atomic force microscopy (AFM) and SEM. Coating chemical analysis and wettability are studied by XPS and water contact angle (WCA), respectively. A lower monomer flow rate was found to result in a higher C–O/C–C ratio and a higher wettability of the deposited coatings.

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