scholarly journals Плазмохимическое и жидкостное травление в постростовой технологии каскадных солнечных элементов на основе гетероструктуры GaInP/GaInAs/Ge

2021 ◽  
Vol 47 (3) ◽  
pp. 14
Author(s):  
А.В. Малевская ◽  
Ю.М. Задиранов ◽  
Д.А. Малевский ◽  
П.В. Покровский ◽  
Н.Д. Ильинская ◽  
...  
Keyword(s):  
Solar Cells ◽  
Comparative Analysis ◽  
Leakage Current ◽  
Chemical Etching ◽  
Plasma Chemical ◽  
Mesa Structure ◽  
Photoresist Layer ◽  
Plasma Chemical Etching ◽  
Liquid Chemical

Investigation and development of a separating mesa-structure creating technology for fabricating multi-junction solar cells based on the GaInP/GaInAs/Ge heterostructure has been carried out. Studied were methods of etching of heterostructure layers: liquid chemical etching in the etchants based on HBr, H2O2, K2Cr2O7 and plasma-chemical etching in the stream of operating gas BCl3. The comparative analysis of etching methods was studied. The protective masks based on photoresist layer and TiOx/SiO2 were developed. Multi-junction solar cells with low parameters of leakage current less than 10-7 A at voltage 0,5-1 V were created.

scholarly journals Experimental studies of plasma-chemical etching of glass when manufacturing diffraction and hologram optical elements

2012 ◽  
Vol 12 (5) ◽  
Author(s):  
Sergey Odinokov ◽  
Gaik Sagatelyan ◽  
Anton Goncharov ◽  
Mikhail Kovalev ◽  
Artem Solomashenko ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Experimental Studies ◽  
Plasma Chemical ◽  
Optical Elements ◽  
Plasma Chemical Etching

FREQUENCY TRIMMING OF THE STW RESONATORS WITH WORKING FREQUENCY UP TO 1 GHZ

2021 ◽  
pp. 79-85
Author(s):  
A. N. Kuznetsov ◽  
S. A. Doberstein ◽  
I. V. Veremeev
Keyword(s):  
Quality Factor ◽  
Chemical Etching ◽  
Single Port ◽  
Frequency Range ◽  
Plasma Chemical ◽  
Etching Method ◽  
Plasma Chemical Etching ◽  
Working Frequency ◽  
Frequency Trimming

This paper presents the data for frequency trimming of the single port STW resona-tors in a frequency range of 500–1000 MHz by plasma chemical etching method. The main parameters of resonators after frequency trimming are given: frequency tolerance <±100·10–6, quality factor of 8600–9500, equivalent elements needed for use of the STW resonators.

Calculating the Nominal Values of the Matching Device Installation of Plasma Chemical Etching

2019 ◽  
Vol 822 ◽  
pp. 594-600
Author(s):  
E.V. Endiiarova ◽  
Singh Ruby
Keyword(s):  
Chemical Etching ◽  
Optimal Performance ◽  
Plasma Chemical ◽  
Plasma Chemical Etching

. The calculation of nominal values of the matching device for the modified plasma chemical etching installation "Plasma 600T" was based on the estimated values of the discharge impedance (plasma). It turned out that for optimal performance, one can use a matching device consisting of two capacitors whose capacitances are: С1 [20; 1000] pF, С2 [4; 100] pF, and inductor with inductance 2,5 μH.

scholarly journals Profiling of nanostructures by scratching probe nanolithography and plasma chemical etching

2017 ◽  
Vol 256 ◽  
pp. 012023 ◽  
Author(s):  
R V Tominov ◽  
V V Bespoludin ◽  
V S Klimin ◽  
V A Smirnov ◽  
O A Ageev
Keyword(s):  
Chemical Etching ◽  
Plasma Chemical ◽  
Plasma Chemical Etching
Sign in / Sign up

Export Citation Format

Share Document