Моделирование реакции низкобарьерного диода Мотта на воздействие тяжелых заряженных частиц космического пространства
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A theoretical analysis of transient ionization processes occurring in a low-barrier GaAs Mott diode under the influence of space radiation high energy charged particles and simulating pulsed laser radiation is carried out. The diode response to the As+ ion action with an energy of 200 MeV, corresponding to a linear energy transfer of 26 MeV cm2/mg, is compared with the response to the femtosecond pulses optical radiation action of various durations (10-1000 fs) and photon energies exceeding the GaAs band gap.
2011 ◽
Vol 40
(3)
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pp. 149-155
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2020 ◽
Vol 23
(1)
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pp. 71-74
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2007 ◽
Vol 36
(5)
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pp. 467-470
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