Mathematical Analysis of a Novel Formaldehyde Remediation Process

2007 ◽  
Vol 2 (3) ◽  
Author(s):  
Norman W Loney
Keyword(s):  
Carbon Dioxide Laser ◽  
Volumetric Flow Rate ◽  
Oxidation Catalyst ◽  
Low Temperature Oxidation ◽  
Laser Applications ◽  
Cross Sectional ◽  
Temperature Oxidation ◽  
Design Variables ◽  
Smoke Stack ◽  
Remediation Process

The NASA low-temperature oxidation catalyst (Pt/SnO2), originally developed for space-based carbon dioxide laser applications has been recently adapted to address formaldehyde destruction in industrial smoke stack emission streams. A mathematical model is developed that can be used to correlate the observable chemistry occurring on the surfaces of a monolith with the volumetric flow rate of the gas and cross sectional area of catalyst surfaces as well as quantifying process design variables such as pressure or temperature of an exhaust gas stream.

Enhanced Low-Temperature Oxidation of 4H-SiC Using SrTi1-xMgxO3-δ

2017 ◽  
Vol 897 ◽  
pp. 356-359
Author(s):  
Li Li ◽  
Akihiro Ikeda ◽  
Tanemasa Asano
Keyword(s):  
Active Oxygen Species ◽  
Interface State ◽  
State Density ◽  
Oxidation Catalyst ◽  
Conduction Band Edge ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Linear Rate ◽  
Dry Oxidation ◽  
The One

SrTi1-xMgxO3-δ, an oxidation catalyst, is employed to produce active oxygen species in an oxidation furnace and to enhance oxidation of 4H-SiC at low temperatures. The linear rate constant of the oxidation model at the 4H-SiC (0001)-Si surface at 800~900 °C is enhanced by two orders of magnitude in comparison to the conventional dry oxidation. The catalytic oxidation is, therefore, able to for a gate oxide at temperatures as low as 800°C. Interface state density in the energy range of 0.2~0.5 eV from the conduction band edge of the 4H-SiC oxidized with catalyst at 800°C is almost same as the one oxidized using the conventional dry oxidation at 1100 °C.

Mass spectrometric characterization of performance of a low-temperature oxidation catalyst

1990 ◽  
Vol 60 (3) ◽  
pp. 389-398 ◽  
Author(s):  
Chen C. Hsu ◽  
Charles S. Dulcey ◽  
James S. Horwitz ◽  
Ming C. Lin
Keyword(s):  
Low Temperature ◽  
Mass Spectrometric ◽  
Oxidation Catalyst ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation

Transmission Electron Microscopy Studies of Aluminum Oxidation

1985 ◽  
Vol 43 ◽  
pp. 268-269
Author(s):  
J.Y. Lee
Keyword(s):  
Nucleation And Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Polycrystalline Aluminum ◽  
Axis Orientation ◽  
Temperature Oxidation ◽  
Aluminum Oxidation ◽  
Transmission Electron ◽  
High Resolution Images ◽  
Argon Ion

In the oxidation of metals and alloys, microstructural features at the atomic level play an important role in the nucleation and growth of the oxide, but little is known about the atomic mechanisms of high temperature oxidation. The present paper describes current progress on crystallographic aspects of aluminum oxidation. The 99.999% pure, polycrystalline aluminum was chemically polished and oxidized in 1 atm air at either 550°C or 600°C for times from 0.5 hr to 4 weeks. Cross-sectional specimens were prepared by forming a sandwich with epoxy, followed by mechanical polishing and then argon ion milling. High resolution images were recorded in a <110>oxide zone-axis orientation with a JE0L JEM 200CX microscope operated at 200 keV.

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