scholarly journals PREPARATION AND CHARACTERIZATION OF IRON SULPHIDE THIN FILMS BY CHEMICAL BATH DEPOSITION METHOD

2010 ◽  
Vol 10 (1) ◽  
pp. 8-11 ◽  
Author(s):  
Anuar Kassim ◽  
Tan WeeTee ◽  
Dzulkefly Kuang Abdullah ◽  
Atan Mohd. Sharif ◽  
Ho SoonMin ◽  
...  

FeS2 thin films have been deposited by using low cost chemical bath deposition technique. The films obtained under deposition parameters such as bath temperature (90 °C), deposition period (90 min), electrolyte concentration (0.15 M) and pH of the reactive mixture (pH 2.5). The thin films were characterized using X-ray diffraction and atomic force microscopy in order to study the structural and morphological properties. The band gap energy, transition type and absorption properties were determined using UV-Vis Spectrophotometer. X-ray diffraction displayed a pattern consistent with the formation of an orthorhombic structure, with a strong (110) preferred orientation. Atomic force microscopy image showed the substrate surface is well covered with irregular grains. A direct band gap of 1.85 eV was obtained according to optical absorption studies.   Keywords: Iron sulfide, X-ray diffraction, chemical bath deposition, thin films

2010 ◽  
Vol 29 (1) ◽  
pp. 97 ◽  
Author(s):  
Anuar Kassim ◽  
Tan Wee Tee ◽  
Abdul Halim Abdullah ◽  
Saravanan Nagalingam ◽  
Ho Soon Min

A low cost chemical bath deposition method has been used for the preparation of Cu4SnS4 thin films onto indium tin oxide glass substrate. The deposition parameters such as bath temperature (50 °C), deposition time (120 min), electrolyte concentration (0.05 M) and bath pH (1.5) were optimized to obtain good quality thin films. The structural, surface morphological and optical properties of thin films were studied by X-ray diffraction, an atomic force microscopy and an UV-Vis Spectrophotometer, respectively. The X-ray diffraction study revealed that the Cu4SnS4 films were polycrystalline in nature with the preferential orientation along the (221) plane. The atomic force microscopy results indicated that the films were smooth, uniform and the substrate surface was covered completely at these experimental conditions. These films exhibited p-type semiconductor behavior with the band gap energy about 1.57 eV.


1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.


2008 ◽  
Vol 8 (4) ◽  
pp. 1757-1761 ◽  
Author(s):  
Ajeet Kaushik ◽  
Jitendra Kumar ◽  
M. K. Tiwari ◽  
R. Khan ◽  
B. D. Malhotra ◽  
...  

Polyaniline (PANI)–ZnO nanocomposite thin film has been successfully fabricated on glass substrates by using vacuum deposition technique. The as-grown PANI–ZnO nanocomposite thin films have been characterized using X-ray diffraction, Scanning Electron Microscopy, Atomic Force Microscopy, UV-visible spectrophotometer and Fourier Transform Infrared (FTIR) spectroscopy, respectively. X-ray diffraction of as-grown film shows the reflection of ZnO nanoparticles along with a broad peak of PANI. The surface morphology of nanocomposite films has been investigated using scanning electron microscopy and atomic force microscopy. The hypsochromic shift of the UV absorption band corresponding to π–π* transition in polymeric chain of PANI and a band at 504 cm –1 due to ZnO nanoparticles has been observed in the FTIR spectra. The hydrogen bonding between the imine group of PANI and ZnO nanoparticle has been confirmed from the presence of the absorbance band at 1151 cm–1 in the FTIR spectra of the nanocomposite thin films.


2001 ◽  
Vol 672 ◽  
Author(s):  
G. Wei ◽  
J. Du ◽  
A. Rar ◽  
J. A. Barnard

ABSTRACTThe nanoindentation behavior of DC magnetron sputtered 10 nm Cu and 10 nm Cu/2 nm Cr thin films deposited on Si (100) has been studied using a Hysitron nanomechanical system. X- ray diffraction and X-ray reflectivity were used to measure the film structure and film thickness, respectively. The grain size and orientation of Cu and Cu/Cr thin films were measured by TEM. Atomic force microscopy (AFM) was used to evaluate the surface morphology and roughness. At the same load, the nanoindentaion displacement of Cu/Cr is smaller than that for Cu, i.e., the 2nm thick Cr underlayer enhances the hardness of Cu. X-ray, TEM, and AFM results show that the grain size of Cu/Cr (< 15 nm) is actually larger than Cu (∼ 3 nm) indicating that the inverse Hall-Petch relationship may be operative.


2008 ◽  
Vol 254 (14) ◽  
pp. 4303-4307 ◽  
Author(s):  
D. Kaczmarek ◽  
J. Domaradzki ◽  
D. Wojcieszak ◽  
R. Wasielewski ◽  
A. Borkowska ◽  
...  

2015 ◽  
Vol 1107 ◽  
pp. 687-692 ◽  
Author(s):  
Noor Azwen Noor Azmy ◽  
Huda Abdullah ◽  
Norshafadzila Mohammad Naim ◽  
Aidil Abdul Hamid ◽  
Sahbudin Shaari ◽  
...  

The effect of gamma radiation on fabricated ZnO doped PVA nanocomposite thin films for determination of Escherichia coli has been investigated. Thin films of ZnO doped PVA were exposed to 60Co γ-radiation source at difference dose rate, ranging from 0 to 30 kGy at room temperature. The structural, morphological and electrical properties of the sample were investigated using X-ray diffraction (XRD), Atomic force microscopy (AFM) and Current-voltage (I-V) measurement. The X-ray diffraction (XRD) spectra have been performed to see the formation of crystal phases of all pure ZnO thin films. The diffraction patterns reveal the good crystalline quality and indicate the crystallization of the ZnO-PVA films strongly depends on radiation dose. The roughness of the thin film surface which can be seen by conducting Atomic force microscopy (AFM) measurement became smoother as the gamma radiation increased. The presence of Escherichia coli as a bacterial contamination in water was identified by measuring the changes of conductivity of thin films using current–voltage (I-V) measurement. The sensitivity of the sensors has been observed to be higher at a higher radiation dose.


RSC Advances ◽  
2016 ◽  
Vol 6 (112) ◽  
pp. 111148-111160 ◽  
Author(s):  
Dongmei Dong ◽  
Wenwen Wang ◽  
Guobo Dong ◽  
Fan Zhang ◽  
Hang Yu ◽  
...  

Thin films of Ni–Ti oxide were co-sputtered by reactive direct current magnetron sputtering and their structures, morphologies, and compositions were investigated by X-ray diffraction, atomic force microscopy and X-ray photo-electron spectroscopy.


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