Nanoindention studies of DC sputtered Cu and Cu/Cr thin films

2001 ◽  
Vol 672 ◽  
Author(s):  
G. Wei ◽  
J. Du ◽  
A. Rar ◽  
J. A. Barnard

ABSTRACTThe nanoindentation behavior of DC magnetron sputtered 10 nm Cu and 10 nm Cu/2 nm Cr thin films deposited on Si (100) has been studied using a Hysitron nanomechanical system. X- ray diffraction and X-ray reflectivity were used to measure the film structure and film thickness, respectively. The grain size and orientation of Cu and Cu/Cr thin films were measured by TEM. Atomic force microscopy (AFM) was used to evaluate the surface morphology and roughness. At the same load, the nanoindentaion displacement of Cu/Cr is smaller than that for Cu, i.e., the 2nm thick Cr underlayer enhances the hardness of Cu. X-ray, TEM, and AFM results show that the grain size of Cu/Cr (< 15 nm) is actually larger than Cu (∼ 3 nm) indicating that the inverse Hall-Petch relationship may be operative.

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.


2003 ◽  
Vol 780 ◽  
Author(s):  
C.Z. Dinu ◽  
R. Tanasa ◽  
V.C. Dinca ◽  
A. Barbalat ◽  
C. Grigoriu ◽  
...  

AbstractPulsed Laser Deposition method (PLD) was used to grow nitinol (NiTi) thin films with goal of investigating their biocompatibility. High purity Ni and Ti targets were alternatively ablated in vacuum with a laser beam (λ=355 nm, 10 Hz) and the material was collected on room temperature Ti substrates. X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and atomic force microscopy analyses have been performed to investigate the chemical composition, crystalline structure and surface morphology of the NiTi films. The nitinol layers biocompatibility has been tested using as a metric the extent to whichthe cells adhereduring the culture period on the surface of NiTi layers deposited on Ti substrates. Vero and fibroblast cell lines dispersed into MEM (Eagle) solution containing 8% fetal bovine serum, at 37° C, were used for tests. Preliminary studies indicate that the interaction at the interface is specifically controlled by the surface morphology, (especially by surface roughness), and by the chemical state of the surface. Cell behavior after contact with NiTi/Ti structure for different intervals (18, 22 and 25 days for the Vero cells, and after 10 and 25 days for fibroblasts) supports the conclusion that NiTi is a very good candidate as a biocompatible material.


1997 ◽  
Vol 482 ◽  
Author(s):  
P. W. Yip ◽  
S.-Q. Wang ◽  
A. J. Drehman ◽  
L. D. Zhu ◽  
P. E. Norris

AbstractThe nucleation and initial stage of GaN growth on sapphire was investigated by atomic force microscopy, X-ray diffraction and photoluminescence. A 15 to 30 nm thick GaN buffer layer deposited at proper conditions was extremely smooth and nearly amorphous. Proper post deposition annealing resulted in the buffer crystallized. The buffer layer deposition temperature, thickness and annealing time and temperature must be coordinated. Low deposition temperature and/or insufficient annealing of the buffer results in a GaN wafer which has fine spiking surface morphology with an RMS of 3.4 nm for 1.4 μm wafer, strong yellow luminescence and wide xray rocking curve FWHM. High deposition temperature, longer crystallization time, and a low growth rate results in a wafer which exhibits strong band edge luminescence without noticeable yellow luminescence, and a narrow (002) diffraction rocking curve. However, the surface morphology exhibits well developed hexagonal feature with RMS roughness of 14.3 nm for a 570 nm thick layer. X-ray rocking curve analysis revealed buffer crystallization, domain coalescence and alignment process. The FWHM of the ω–scan of GaN (101) diffraction was 1700–2000 arc seconds for 200–1400 nm wafers which indicates that the twist of the domains is not changing much with the growth.


2008 ◽  
Vol 8 (8) ◽  
pp. 4127-4131 ◽  
Author(s):  
G. S. Okram ◽  
Kh. Namrata Devi ◽  
H. Sanatombi ◽  
Ajay Soni ◽  
V. Ganesan ◽  
...  

Nanocrystalline nickel powders were prepared with grain size 'd' in the range 40–100 nm diameters through polyol method. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used for characterization. XRD of the prepared samples consistently matched with standard fcc structure of nickel without any impurity peak. Detailed analysis and calculations using Scherrer equation for (111) peak revealed systematic increase in line width and peak shifting towards lower diffraction 2θ angles with decrease in nickel to ethylene glycol mole ratio. Different values of d estimated from various peaks of each sample suggested associated microstrains in the nanograins. Values of d estimated from X-ray diffraction patterns were compared with those obtained from atomic force microscopy and scanning electron microscopy results, and discussed. Observed lattice expansion is explained, on the basis of a theoretical model of linear elasticity.


2021 ◽  
Vol 903 ◽  
pp. 162-167
Author(s):  
Marina Romanova ◽  
Regīna Burve ◽  
Yuri Dekhtyar ◽  
Kristaps Palskis ◽  
Vera Serga

The effect of 6 MeV gamma photons on thermally stimulated exoelectron emission (TSEE) spectra of MgO films was studied. The films were fabricated on Si/SiO2 substrates using the extraction-pyrolytic method. The crystalline structure and surface morphology of the films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). TSEE spectra of MgO films had emission peaks at about 450 oC and 525 oC. The area under the TSEE peaks increased after repeated TSEE measurements. In the case of gamma-irradiated films, the percentage increase in the area depended on the radiation dose, decreasing linearly with an increase in the radiation dose from 0 to 80 Gy. The results suggest that gamma radiation reduced the density of trapped electrons present in the as-grown MgO films or created competing hole traps that inhibited TSEE from the films.


2008 ◽  
Vol 8 (4) ◽  
pp. 1757-1761 ◽  
Author(s):  
Ajeet Kaushik ◽  
Jitendra Kumar ◽  
M. K. Tiwari ◽  
R. Khan ◽  
B. D. Malhotra ◽  
...  

Polyaniline (PANI)–ZnO nanocomposite thin film has been successfully fabricated on glass substrates by using vacuum deposition technique. The as-grown PANI–ZnO nanocomposite thin films have been characterized using X-ray diffraction, Scanning Electron Microscopy, Atomic Force Microscopy, UV-visible spectrophotometer and Fourier Transform Infrared (FTIR) spectroscopy, respectively. X-ray diffraction of as-grown film shows the reflection of ZnO nanoparticles along with a broad peak of PANI. The surface morphology of nanocomposite films has been investigated using scanning electron microscopy and atomic force microscopy. The hypsochromic shift of the UV absorption band corresponding to π–π* transition in polymeric chain of PANI and a band at 504 cm –1 due to ZnO nanoparticles has been observed in the FTIR spectra. The hydrogen bonding between the imine group of PANI and ZnO nanoparticle has been confirmed from the presence of the absorbance band at 1151 cm–1 in the FTIR spectra of the nanocomposite thin films.


2008 ◽  
Vol 254 (14) ◽  
pp. 4303-4307 ◽  
Author(s):  
D. Kaczmarek ◽  
J. Domaradzki ◽  
D. Wojcieszak ◽  
R. Wasielewski ◽  
A. Borkowska ◽  
...  

2010 ◽  
Vol 29 (1) ◽  
pp. 97 ◽  
Author(s):  
Anuar Kassim ◽  
Tan Wee Tee ◽  
Abdul Halim Abdullah ◽  
Saravanan Nagalingam ◽  
Ho Soon Min

A low cost chemical bath deposition method has been used for the preparation of Cu4SnS4 thin films onto indium tin oxide glass substrate. The deposition parameters such as bath temperature (50 °C), deposition time (120 min), electrolyte concentration (0.05 M) and bath pH (1.5) were optimized to obtain good quality thin films. The structural, surface morphological and optical properties of thin films were studied by X-ray diffraction, an atomic force microscopy and an UV-Vis Spectrophotometer, respectively. The X-ray diffraction study revealed that the Cu4SnS4 films were polycrystalline in nature with the preferential orientation along the (221) plane. The atomic force microscopy results indicated that the films were smooth, uniform and the substrate surface was covered completely at these experimental conditions. These films exhibited p-type semiconductor behavior with the band gap energy about 1.57 eV.


2010 ◽  
Vol 10 (1) ◽  
pp. 8-11 ◽  
Author(s):  
Anuar Kassim ◽  
Tan WeeTee ◽  
Dzulkefly Kuang Abdullah ◽  
Atan Mohd. Sharif ◽  
Ho SoonMin ◽  
...  

FeS2 thin films have been deposited by using low cost chemical bath deposition technique. The films obtained under deposition parameters such as bath temperature (90 °C), deposition period (90 min), electrolyte concentration (0.15 M) and pH of the reactive mixture (pH 2.5). The thin films were characterized using X-ray diffraction and atomic force microscopy in order to study the structural and morphological properties. The band gap energy, transition type and absorption properties were determined using UV-Vis Spectrophotometer. X-ray diffraction displayed a pattern consistent with the formation of an orthorhombic structure, with a strong (110) preferred orientation. Atomic force microscopy image showed the substrate surface is well covered with irregular grains. A direct band gap of 1.85 eV was obtained according to optical absorption studies.   Keywords: Iron sulfide, X-ray diffraction, chemical bath deposition, thin films


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