Tem characterization of bimetallic nanocatalyst obtained by colloidal chemistry

2021 ◽  
Author(s):  
Cora Moreira da Silva ◽  
Author(s):  
W. E. Lee

An optical waveguide consists of a several-micron wide channel with a slightly different index of refraction than the host substrate; light can be trapped in the channel by total internal reflection.Optical waveguides can be formed from single-crystal LiNbO3 using the proton exhange technique. In this technique, polished specimens are masked with polycrystal1ine chromium in such a way as to leave 3-13 μm wide channels. These are held in benzoic acid at 249°C for 5 minutes allowing protons to exchange for lithium ions within the channels causing an increase in the refractive index of the channel and creating the waveguide. Unfortunately, optical measurements often reveal a loss in waveguiding ability up to several weeks after exchange.


Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.


2001 ◽  
Vol 7 (S2) ◽  
pp. 426-427
Author(s):  
Bradley R. Johnson ◽  
Waltraud M. Kriven

Mullite (3Al2O3•2SiO2) exists in a solid solution field (∼57-63 mol% Al2O3) as the only stable compound in the Al2O3•SiO2 phase diagram at ambient pressures. Equilibrium 3:2 mullite has an orthorhombic structure with b>a (o-mullite). However, when initially crystallized from molecularly mixed, 3:2 precursors at temperatures < 1200°C, the first phase that forms has lattice parameters with a ≈b. This structure is often termed pseudotetragonal mullite (pt-mullite), since even when the ‘a’ and ‘b’ lattice parameters are identical, they are symmetrically independent. Pseudotetragonal mullite has been shown to contain approx. 70 mol% Al2O3. with increasing time and temperature, the structure gradually assimilates the residual SiO2, and the lattice parameters change, such that by 1400°C, the material has attained its equilibrium structure and composition.TEM was used to determine the spatial relationship between the crystalline phase and the residual, amorphous, SiO2-rich phase in pt-mullite. The starting materials were quenched, 3:2 mullite beads and fibers (made by containerless processing).


2002 ◽  
Vol 8 (S02) ◽  
pp. 1368-1369
Author(s):  
X. Zhao ◽  
Y. Liu ◽  
M. Zheng ◽  
Z. Hao ◽  
S. Bandyopadhay ◽  
...  

Author(s):  
Daniela Belletti ◽  
Massimo Tonelli ◽  
Flavio Forni ◽  
Giovanni Tosi ◽  
Maria Angela Vandelli ◽  
...  
Keyword(s):  

2012 ◽  
Vol 258 (19) ◽  
pp. 7395-7400 ◽  
Author(s):  
R.M.S. dos Reis ◽  
R.L. Maltez ◽  
E.C. Moreira ◽  
Y.P. Dias ◽  
H. Boudinov

2017 ◽  
Vol 23 (S1) ◽  
pp. 2036-2037
Author(s):  
D. Guerrero-Areque ◽  
Ricardo Gomez ◽  
H.A. Calderon

2021 ◽  
Vol 103 (1) ◽  
pp. 1283-1300
Author(s):  
Stéphane Poitel ◽  
Samaneh Daviran ◽  
Manuel Bianco ◽  
Christian Walter ◽  
Kai Herbrig ◽  
...  

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