scholarly journals Analytical model of carrier mobility in a Polymer Field Effect Transistor

2007 ◽  
Vol 61 (2) ◽  
pp. 55-59
Author(s):  
Milan Milosevic ◽  
Rifat Ramovic
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Experimental Results ◽  
Transistor Channel ◽  
Proposed Model ◽  
Current Voltage ◽  
Effect Transistor ◽  
Parameters Of Interest

In this paper, the carrier mobility analytical model in a POFET (Polymer Field Effect Transistor) channel is proposed. The model was developed on the basis of existing models and experimental results. The proposed model is universal because it encompasses the carrier mobility dependence on temperature, electric field and trap density in the POFET channel. The model is comparatively simple, easy for application and gives valuable results. According to the presented model, simulations of mobility as a function of the parameters of interest were performed. The obtained results are shown graphically. In comparison to accessible experimental results excellent correspondence was found. This model enables the calculation of simple POFET current-voltage I (V) characteristics.

Conduction Mechanism Based Model of Organic Field Effect Transistor Structure

2007 ◽  
Vol 555 ◽  
pp. 125-130
Author(s):  
Rajko M. Šašić ◽  
P.M. Lukić
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Conduction Mechanism ◽  
Mobility Model ◽  
Transistor Structure ◽  
Organic Field Effect Transistor ◽  
Current Voltage ◽  
Polymer Semiconductor ◽  
Effect Transistor

Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence on temperature, electric field and trap density μ(T,E,NT) was investigated, inspiring directly the current-voltage I(V) model of OFET structures. Subsequent simulations were also performed and the obtained results compared with the data available in the literature.

Two dimensional analytical model for a reconfigurable field effect transistor

2018 ◽  
Vol 114 ◽  
pp. 62-74 ◽  
Author(s):  
R. Ranjith ◽  
Remya Jayachandran ◽  
K.J. Suja ◽  
Rama S. Komaragiri
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Two Dimensional ◽  
Effect Transistor

Patterning rubrene crystalline thin films for sub-micrometer channel length field-effect transistor arrays

2014 ◽  
Vol 2 (44) ◽  
pp. 9359-9363 ◽  
Author(s):  
Juan Zhu ◽  
Wenchong Wang ◽  
Qigang Zhong ◽  
Liqiang Li ◽  
Chuan Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Channel Length ◽  
Organic Films ◽  
Porous Structures ◽  
Patterned Growth ◽  
Effect Transistor ◽  
Magnitude Difference

The patterned growth of crystalline rubrene films directly on electrodes is demonstrated. In addition, organic films with close packed and porous structures are locally achieved by controlling the electrode spaces, resulting in a two orders of magnitude difference in carrier mobility.

scholarly journals Numerical simulation of different silicon nanowire field-effect transistor channel lengths for biosensing application

2018 ◽  
Author(s):  
M. F. M. Fathil ◽  
M. H. M. Ghazali ◽  
M. K. Md Arshad ◽  
M. Nuzaihan M. N. ◽  
Sh. Nadzirah ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Transistor Channel ◽  
Effect Transistor ◽  
Channel Lengths

Quantum Modelling of Nanoscale Silicon Gate-All-Around Field Effect Transistor

2020 ◽  
Vol 64 ◽  
pp. 115-122
Author(s):  
P. Vimala ◽  
N.R. Nithin Kumar
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor ◽  
Quantum Mechanical Effects ◽  
Novel Devices

The paper introduces an analytical model for gate all around (GAA) or Surrounding Gate Metal Oxide Semiconductor Field Effect Transistor (SG-MOSFET) inclusive of quantum mechanical effects. The classical oxide capacitance is replaced by the capacitance incorporating quantum effects by including the centroid parameter. The quantum variant of inversion charge distribution function, inversion layer capacitance, drain current, and transconductance expressions are modeled by employing this model. The established analytical model results agree with the simulated results, verifying these models' validity and providing theoretical supports for designing and applying these novel devices.

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