A quasi two-dimensional analytical model for threshold voltage of a modulation doped field effect transistor

2002 ◽  
Author(s):  
S. Sen ◽  
M.K. Pandey ◽  
M. Khanna ◽  
R.S. Gupta
Keyword(s):  
Analytical Model ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Two Dimensional ◽  
Effect Transistor

Two dimensional analytical model for a reconfigurable field effect transistor

2018 ◽  
Vol 114 ◽  
pp. 62-74 ◽  
Author(s):  
R. Ranjith ◽  
Remya Jayachandran ◽  
K.J. Suja ◽  
Rama S. Komaragiri
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Two Dimensional ◽  
Effect Transistor

A Two-Dimensional Analytical Model for Tunnel Field Effect Transistor and Its Applications

2013 ◽  
Vol 52 (4R) ◽  
pp. 044303 ◽  
Author(s):  
Ning Cui ◽  
Libin Liu ◽  
Qian Xie ◽  
Zhen Tan ◽  
Renrong Liang ◽  
...  
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Two Dimensional ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Two-dimensional threshold voltage model of a nanoscale silicon-on-insulator tunneling field-effect transistor

2013 ◽  
Vol 22 (3) ◽  
pp. 038501 ◽  
Author(s):  
Yu-Chen Li ◽  
He-Ming Zhang ◽  
Yu-Ming Zhang ◽  
Hui-Yong Hu ◽  
Bin Wang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon On Insulator ◽  
Two Dimensional ◽  
Effect Transistor ◽  
Threshold Voltage Model

scholarly journals HfAlOx/Al2O3 Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 446
Author(s):  
Minghui Zhang ◽  
Fang Lin ◽  
Wei Wang ◽  
Feng Wen ◽  
Genqiang Chen ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Carrier Density ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Layer Deposition ◽  
Source Current ◽  
Effect Transistor ◽  
Source Current Density

In this work, a hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with HfAlOx/Al2O3 bilayer dielectrics is fabricated and characterized. The HfAlOx/Al2O3 bilayer dielectrics are deposited by the atomic layer deposition (ALD) technique, which can protect the H-terminated diamond two-dimensional hole gas (2DHG) channel. The device demonstrates normally-on characteristics, whose threshold voltage (VTH) is 8.3 V. The maximum drain source current density (IDSmax), transconductance (Gm), capacitance (COX) and carrier density (ρ) are −6.3 mA/mm, 0.73 mS/mm, 0.22 μF/cm2 and 1.53 × 1013 cm−2, respectively.

scholarly journals Two-Dimensional-Material-Based Field-Effect Transistor Biosensor for Detecting COVID-19 Virus (SARS-CoV-2)

ACS Nano ◽  
2021 ◽  
Author(s):  
Parvin Fathi-Hafshejani ◽  
Nurul Azam ◽  
Lu Wang ◽  
Marcelo A. Kuroda ◽  
Michael C. Hamilton ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Two Dimensional ◽  
Effect Transistor
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