Input Space and Output Performance

1991 ◽  
Author(s):  
G.P. Liu
Keyword(s):  
Input Space ◽  
Output Performance

Characterization of Electric Match Initiators by Output Performance.

1997 ◽  
Author(s):  
Paul Agresti ◽  
Gary Chen ◽  
Terrance Rivinius
Keyword(s):  
Output Performance

Compensating for limitations in domestic output performance? Member state delegation of policy competencies to regional international organizations

2020 ◽  
pp. 004711782097032
Author(s):  
Diana Panke
Keyword(s):  
Member State ◽  
International Organizations ◽  
Policy Area ◽  
Member States ◽  
Domestic Output ◽  
Window Dressing ◽  
Output Performance ◽  
Policy Goals ◽  
Energy States

Cooperation in regional international organizations (RIOs) can help member states to work toward and perhaps achieve policy goals that would not be feasible unilaterally. Thus, RIOs might be used as a means of states to compensate for domestic shortcomings in output performance. Do states equip RIOs with policy competencies in order to compensate corresponding domestic performance shortcomings? The analysis of a novel database on policy competencies of 76 RIOs between 1945 and 2015 reveals that usually RIOs are not usually used as window-dressing devices by which states disguise limited domestic output performance. Instead, governments tend to equip RIOs with policy competencies in order to further strengthen their already good output performance in most policy areas. However, in the policy area, ‘energy’ states tend to confer more competencies to their respective RIOs, the worse they perform domestically, indicating that output-related compensation dynamics might be at play in this field.

Anomalous output performance enhancement of RGO-based triboelectric nanogenerators by Cu-bonding

Nano Energy ◽  
2021 ◽  
Vol 86 ◽  
pp. 106126
Author(s):  
Ruey-Chi Wang ◽  
Yu-Cheng Lin ◽  
Po-Tsang Chen ◽  
Hsiu-Cheng Chen ◽  
Wan-Ting Chiu
Keyword(s):  
Performance Enhancement ◽  
Output Performance ◽  
Triboelectric Nanogenerators ◽  
Cu Bonding

scholarly journals gbt-HIPS: Explaining the Classifications of Gradient Boosted Tree Ensembles

2021 ◽  
Vol 11 (6) ◽  
pp. 2511
Author(s):  
Julian Hatwell ◽  
Mohamed Medhat Gaber ◽  
R. Muhammad Atif Azad
Keyword(s):  
State Of The Art ◽  
Heuristic Method ◽  
Good Explanation ◽  
Classification Rule ◽  
Data Sets ◽  
Classification Models ◽  
Boundary Values ◽  
Class Label ◽  
Input Space ◽  
Boosted Tree

This research presents Gradient Boosted Tree High Importance Path Snippets (gbt-HIPS), a novel, heuristic method for explaining gradient boosted tree (GBT) classification models by extracting a single classification rule (CR) from the ensemble of decision trees that make up the GBT model. This CR contains the most statistically important boundary values of the input space as antecedent terms. The CR represents a hyper-rectangle of the input space inside which the GBT model is, very reliably, classifying all instances with the same class label as the explanandum instance. In a benchmark test using nine data sets and five competing state-of-the-art methods, gbt-HIPS offered the best trade-off between coverage (0.16–0.75) and precision (0.85–0.98). Unlike competing methods, gbt-HIPS is also demonstrably guarded against under- and over-fitting. A further distinguishing feature of our method is that, unlike much prior work, our explanations also provide counterfactual detail in accordance with widely accepted recommendations for what makes a good explanation.

scholarly journals Formation and Evaluation of Silicon Substrate with Highly-Doped Porous Si Layers Formed by Metal-Assisted Chemical Etching

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yijie Li ◽  
Nguyen Van Toan ◽  
Zhuqing Wang ◽  
Khairul Fadzli Bin Samat ◽  
Takahito Ono
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Contact Resistance ◽  
Power Factor ◽  
Chemical Etching ◽  
Porous Si ◽  
Si Substrate ◽  
Si Substrates ◽  
Output Performance ◽  
Metal Assisted Chemical Etching

AbstractPorous silicon (Si) is a low thermal conductivity material, which has high potential for thermoelectric devices. However, low output performance of porous Si hinders the development of thermoelectric performance due to low electrical conductivity. The large contact resistance from nonlinear contact between porous Si and metal is one reason for the reduction of electrical conductivity. In this paper, p- and n-type porous Si were formed on Si substrate by metal-assisted chemical etching. To decrease contact resistance, p- and n-type spin on dopants are employed to dope an impurity element into p- and n-type porous Si surface, respectively. Compared to the Si substrate with undoped porous samples, ohmic contact can be obtained, and the electrical conductivity of doped p- and n-type porous Si can be improved to 1160 and 1390 S/m, respectively. Compared with the Si substrate, the special contact resistances for the doped p- and n-type porous Si layer decreases to 1.35 and 1.16 mΩ/cm2, respectively, by increasing the carrier concentration. However, the increase of the carrier concentration induces the decline of the Seebeck coefficient for p- and n-type Si substrates with doped porous Si samples to 491 and 480 μV/K, respectively. Power factor is related to the Seebeck coefficient and electrical conductivity of thermoelectric material, which is one vital factor that evaluates its output performance. Therefore, even though the Seebeck coefficient values of Si substrates with doped porous Si samples decrease, the doped porous Si layer can improve the power factor compared to undoped samples due to the enhancement of electrical conductivity, which facilitates its development for thermoelectric application.

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