An integrated frequency synthesizer in 130 nm SiGe BiCMOS technology for 28/38 GHz 5G wireless networks

Author(s):  
Frank Herzel ◽  
Maciej Kucharski ◽  
Arzu Ergintav ◽  
Johannes Borngraber ◽  
Herman Jalli Ng ◽  
...  
2015 ◽  
Vol 25 (01) ◽  
pp. 1640010
Author(s):  
Jin He ◽  
Yong-Zhong Xiong ◽  
Jiankang Li ◽  
Muthukumaraswamy Annamalai Arasu ◽  
Yue Ping Zhang

This paper presents a fully-integrated D-band frequency synthesizer (FS) in 0.13-[Formula: see text]m SiGe BiCMOS technology. The proposed FS consists of a 20-GHz phase-locked loop (PLL) and a frequency multiplier including a doubler ([Formula: see text][Formula: see text]2) and a quadrupler ([Formula: see text][Formula: see text]4). The FS generates the D-band output signals from 164.08 to 166.19[Formula: see text]GHz. At 166.19[Formula: see text]GHz, the measured phase noises (PN) at 100-kHz and 1-MHz offset frequencies are [Formula: see text]54.07[Formula: see text]dBc/Hz and [Formula: see text]72.29[Formula: see text]dBc/Hz, respectively. The proposed FS achieves the low power dissipation of around 110[Formula: see text]mW and the chip area is [Formula: see text] including all testing pads. The FS has great potential to be used for low-power D-band applications.


2021 ◽  
Vol 68 (4) ◽  
pp. 1439-1445
Author(s):  
Hanbin Ying ◽  
Jeffrey W. Teng ◽  
John D. Cressler

Author(s):  
Nelson E. Lourenco ◽  
Robert L. Schmid ◽  
Kurt A. Moen ◽  
Stanley D. Phillips ◽  
Troy D. England ◽  
...  

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