Comparison of the Power Cycling Performance of Silicon and Silicon Carbide Power Devices in a Baseplate Less Module Package at Different Temperature Swings

2021 ◽  
Author(s):  
Felix Hoffmann ◽  
Nando Kaminski ◽  
Stefan Schmitt
Keyword(s):  
Silicon Carbide ◽  
Cycling Performance ◽  
Power Devices ◽  
Power Cycling

Power Cycling Capability and Lifetime Estimation of Discrete Silicon Carbide Power Devices

2020 ◽  
Vol 1004 ◽  
pp. 977-984 ◽  
Author(s):  
Felix Hoffmann ◽  
Nando Kaminski
Keyword(s):  
Cycling Performance ◽  
Test Results ◽  
Power Devices ◽  
Lifetime Estimation ◽  
Power Semiconductors ◽  
Power Cycling ◽  
Order Of Magnitude ◽  
Higher Temperature ◽  
Multiple Power ◽  
Lower Temperature

In this work, the three most common lifetime models for power semiconductors i.e. LESIT, CIPS08 and SKiM63 are investigated regarding their applicability for SiC power devices. For this reason, multiple power cycling tests with a large number of devices were performed. The results show that those models can properly reflect the power cycling test results of SiC power semiconductors for higher temperature swings if the model parameter are properly adjusted. However, they show a significant error for lower temperature swings and drastically underestimate the lifetime. This indicates that the inferior power cycling performance of SiC power devices compared to silicon at high temperature swings does not necessarily imply that the service life is affected in the same order of magnitude.

Silicon carbide high-power devices

1996 ◽  
Vol 43 (10) ◽  
pp. 1732-1741 ◽  
Author(s):  
C.E. Weitzel ◽  
J.W. Palmour ◽  
C.H. Carter ◽  
K. Moore ◽  
K.K. Nordquist ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Power Devices

Low-Temperature Joining Technique as Interconnection Technology for Power Electronics

2011 ◽  
Vol 324 ◽  
pp. 437-440
Author(s):  
Raed Amro
Keyword(s):  
Low Temperature ◽  
Power Electronics ◽  
Life Time ◽  
Junction Temperature ◽  
Limiting Factors ◽  
Power Devices ◽  
Packaging Technology ◽  
Power Cycling ◽  
Power Modules ◽  
Bond Wires

There is a demand for higher junction temperatures in power devices, but the existing packaging technology is limiting the power cycling capability if the junction temperature is increased. Limiting factors are solder interconnections and bond wires. With Replacing the chip-substrate soldering by low temperature joining technique, the power cycling capability of power modules can be increased widely. Replacing also the bond wires and using a double-sided low temperature joining technique, a further significant increase in the life-time of power devices is achieved.

scholarly journals Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling

2018 ◽  
Vol 88-90 ◽  
pp. 462-469 ◽  
Author(s):  
N. Dornic ◽  
A. Ibrahim ◽  
Z. Khatir ◽  
S.H. Tran ◽  
J.-P. Ousten ◽  
...  
Keyword(s):  
Degradation Mechanisms ◽  
Power Devices ◽  
Power Cycling
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