scholarly journals Investigation Of Helium Implanted Fe–Cr Alloys By Means Of X–Ray Diffraction And Positron Annihilation Spectroscopy

2015 ◽  
Vol 66 (6) ◽  
pp. 334-338
Author(s):  
Patrik Novák ◽  
Aleksandr Gokhman ◽  
Edmund Dobročka ◽  
Jozef Bokor ◽  
Stanislav Pecko
Keyword(s):  
Positron Annihilation ◽  
Domain Size ◽  
Surface Region ◽  
Grazing Incidence ◽  
Positron Annihilation Spectroscopy ◽  
Lattice Parameter ◽  
Implantation Dose ◽  
X Ray Diffraction ◽  
Coherent Domain Size ◽  
X Ray

Abstract X-ray diffraction (XRD) and positron annihilation spectroscopy (PAS) have been used for the characterization of the two binary alloys Fe-Cr with Cr content 2.36 and 8.39 wt%. The influence of ion implantation on these alloys was studied. Different implantation doses of helium, up to 0.5 C/cm2, were used to simulate neutron-induced damage in a sub-surface region. To characterize the damage, a lattice parameter, coherent domain size, residual stress and a crystallographic texture have been studied by grazing incidence X-ray diffraction (GIXRD). It was found out that these parameters showed a similar dependence on the implantation dose as the positron lifetime determined by positron annihilation spectroscopy.

scholarly journals Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams

2013 ◽  
Vol 46 (4) ◽  
pp. 887-892 ◽  
Author(s):  
Genziana Bussone ◽  
Rüdiger Schott ◽  
Andreas Biermanns ◽  
Anton Davydok ◽  
Dirk Reuter ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Lattice Spacing ◽  
Molecular Beam ◽  
Grazing Incidence ◽  
Lattice Parameter ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Nanowires

Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in combination with a nanofocused X-ray beam allows the in-plane lattice parameter of single NWs to be probed, which is not possible for randomly grown NWs. Reciprocal space maps were collected at different heights along the NW to investigate the crystal structure. Simultaneously, substrate areas with different distances from the Au-implantation spots below the NWs were probed. Around the NWs, the data revealed a 0.4% decrease in the lattice spacing in the substrate compared with the expected unstrained value. This suggests the presence of a compressed region due to Au implantation.

Properties of TiN Coatings Deposited on Nitrogen Ion Implanted Steel C1045

2007 ◽  
Vol 555 ◽  
pp. 59-64
Author(s):  
D. Peruško ◽  
N. Bibić ◽  
S. Petrović ◽  
M. Popović ◽  
M. Novaković ◽  
...  
Keyword(s):  
Diffraction Analysis ◽  
Strong Dependence ◽  
Surface Region ◽  
Grazing Incidence ◽  
Iron Nitrides ◽  
X Ray Diffraction ◽  
Near Surface ◽  
X Ray ◽  
Tin Coatings ◽  
Nitrogen Ion

The effects of nitrogen pre-implantation of AISI C1045 steel substrates on the properties of deposited TiN coatings were investigated. Nitrogen ion implantations were performed at 40 keV, to the fluences from 5x1016 – 5x1017 ions/cm2. On so prepared substrates we deposited 1.3 μm thick TiN layers by reactive sputtering. Structural characterizations of the samples were performed by grazing incidence X-ray diffraction analysis (GXRD), standard X-ray diffraction analysis (XRD), and scanning electron microscopy (SEM). Microhardness was measured by Vicker’s method. The obtained results indicate the formation of iron-nitrides in the near surface region of the substrates, more pronounced for higher implanted fluences. The structure of the deposited TiN coatings shows a strong dependence on the pre-implantation of the substrates, which is attributed to the changed local structure at the surface. Ion implantation and deposition of hard TiN coatings induce an increase of the microhardness of this low performance steel of more than eight times.

Interfacial Diffusion in a MOCVD Grown Barium Titanate Film

1999 ◽  
Vol 591 ◽  
Author(s):  
A. Datta ◽  
Soma Chattopadhyay ◽  
A.G. Richter ◽  
J. Kmetko ◽  
C. B. Lee
Keyword(s):  
Ferroelectric Phase Transition ◽  
Ferroelectric Phase ◽  
Grazing Incidence ◽  
Lattice Parameter ◽  
Composition Profile ◽  
Progressive Decrease ◽  
X Ray Diffraction ◽  
Interfacial Diffusion ◽  
X Ray ◽  
Film Substrate

ABSTRACTA combination of two nondestructive techniques, Grazing Incidence X-ray Reflectivity and High Resolution X-ray Diffraction, is used to study (at around 10Å resolution) the composition profile across a 500Å thick film of BaTiO3 grown epitaxially on (100) MgO by MOCVD. Results from both studies indicate diffusion of Mg to about 250Å into the film at film-substrate interface, consistent with the diffuse ferroelectric phase transition observed in this film. The lattice parameter a shows a progressive decrease as we move into the film from the interface, and an anomalously low value in the Mg-free portion of the film.

X-Ray Diffraction Study of a Thin GaAs Film on Si(100)

1987 ◽  
Vol 102 ◽  
Author(s):  
Arun S. Bommannavar ◽  
C. J. Sparks ◽  
A. Habenschuss ◽  
G. E. Ice ◽  
A. Dhere ◽  
...  
Keyword(s):  
Strain Distribution ◽  
Molecular Beam ◽  
Silicon Crystal ◽  
Domain Size ◽  
Lattice Parameter ◽  
Particle Sizes ◽  
Gaas Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mosaic Spread

ABSTRACTA 900A single crystalline GaAs film deposited by molecular beam epitaxy (MBE) on a silicon crystal cut 4.1° from (001) surface was characterized with X-ray diffraction measurements of the mosaic spread, particle size and strain distribution, and lattice parameter. The GaAs film had a larger mosaic spread in the direction of the steps of the silicon surface and coherent particle sizes of about 900 Å compared to the estimated film thickness of approximately 1000 Å. Superlattice reflections gave an ordered domain size of about 330 Å. There is a residual strain gradient in the film which is nearly linear with the lattice constant differing by about 0.044 Å between the surface of the film and its interface with the silicon substrate. Lattice parameter measurements indicate a small expansion of 0.13% perpendicular to the plane of the film.

Structural Characterization of GaN Epilayers Grown on Patterned Sapphire Substrates

2005 ◽  
Vol 864 ◽  
Author(s):  
Chang-Soo Kim ◽  
Ji-Hyun Moon ◽  
Sang-Jun Lee ◽  
Sam-Kyu Noh ◽  
Je Won Kim ◽  
...  
Keyword(s):  
Incidence Angle ◽  
Surface Region ◽  
Grazing Incidence ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Patterned Substrate ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

AbstractThe structural properties of GaN epitaxial layers grown on patterned sapphire substrates by MOCVD have been investigated using HRXRD(high-resolution X-ray diffraction), GIXRD(grazing incidence X-ray diffraction) and PL(photoluminescence). For X-ray characterizations rocking curves for GaN (10·5), (00·2), (11·4) and (11·0) reflections for which incidence angles of X-rays are 32.0°, 17.3°, 11.0° and 0.34°, respectively, were measured. For (10·5), (00·2) and (11·4) reflections FWHMs of the rocking curves for a patterned substrate were broader than those for a unpatterned substrate, for (11·0) reflection, however, FWHM for a patterned substrate was much narrower than that for a unpatterned substrate. The normalized FWHM for all reflections decreases as the incidence angle of X-ray decreases. The results indicate that the crystalline quality in the surface region of the epilayer on a patterned substrate was especially improved because the penetration depth of X-ray depends on the incidence angle. The intensity of PL peak of the epilayer for a patterned substrate increased compared to that for a unpatterned substrate, and the increase in PL intensity is attributed to the reduction in dislocation density at the surface region revealed the by X-ray results.

scholarly journals Multireflection grazing-incidence X-ray diffraction: a new approach to experimental data analysis

2019 ◽  
Vol 52 (6) ◽  
pp. 1409-1421 ◽  
Author(s):  
Marianna Marciszko-Wiąckowska ◽  
Adrian Oponowicz ◽  
Andrzej Baczmański ◽  
Miroslaw Wróbel ◽  
Ch. Braham ◽  
...  
Keyword(s):  
Experimental Data ◽  
Linear Regression ◽  
Diffraction Method ◽  
Grazing Incidence ◽  
Lattice Parameter ◽  
Test Surface ◽  
Shear Stresses ◽  
Simple Linear Regression ◽  
X Ray Diffraction ◽  
X Ray

The multireflection grazing-incidence X-ray diffraction method is used to test surface stresses at depths of several micrometres in the case of metal samples. This work presents new ways of analysing experimental data obtained by this method for Ni samples exhibiting significant elastic anisotropy of crystals. Three different methods of determining biaxial stresses and lattice parameter were compared. In the first approach, the calculations were performed using the linear least-squares method, and then two simplified procedures based on simple linear regression (weighted and non-weighted) were applied. It was found that all the tested methods give similar results, i.e. almost equal values of the determined stresses and lattice parameters and the uncertainties of their determination. The advantage of analyses based on simple linear regression is their simplicity and straightforward interpretation, enabling easy verification of the influence of the crystallographic texture and the presence of shear stresses, as well as graphical determination of the stress-free lattice parameter.

Analysis of stresses and crystal structure in the surface layer of hexagonal polycrystalline materials: a new methodology based on grazing incidence diffraction

2016 ◽  
Vol 49 (1) ◽  
pp. 85-102 ◽  
Author(s):  
Marianna Marciszko ◽  
Andrzej Baczmański ◽  
Chedly Braham ◽  
Mirosław Wróbel ◽  
Wilfrid Seiler ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Stress Gradient ◽  
Grazing Incidence ◽  
Lattice Parameter ◽  
Polycrystalline Materials ◽  
X Rays ◽  
X Ray Diffraction ◽  
Surface Layers ◽  
X Ray ◽  
Good Agreement

The multireflection grazing-incidence X-ray diffraction (MGIXD) method is commonly used to determine a stress gradient in thin surface layers (about 1–20 µm for metals). In this article, the development of MGIXD to enable the determination not only of stresses but also of thec/aratio and thea0strain-free lattice parameter in hexagonal polycrystalline materials is presented and tested. The new procedure was applied for the results of measurements performed using a laboratory X-ray diffractometer and synchrotron radiation. The evolution of stresses and lattice parameters with depth was determined for Ti and Ti-alloy samples subjected to different mechanical surface treatments. A very good agreement of the results obtained using three different wavelengths of synchrotron radiation as well as classical X-rays (CuKα radiation) was found.

Shape-fitting analyses of two-dimensional X-ray diffraction spots for strain-distribution evaluation in a β-FeSi2 nanofilm

2019 ◽  
Vol 52 (4) ◽  
pp. 732-744 ◽  
Author(s):  
Shohei Takemoto ◽  
Ken Hattori ◽  
Masaaki Someta ◽  
Azusa N. Hattori ◽  
Hidekazu Tanaka ◽  
...  
Keyword(s):  
Strain Distribution ◽  
Domain Size ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Shape Fitting ◽  
Transmission Electron ◽  
Minimum Residual ◽  
Strain Components ◽  
Homogeneous Domains

New fitting analyses for peak shapes in a 2D reciprocal-space map are demonstrated to evaluate the strain, strain distribution and domain size of a crystalline ultra-thin (15 Å) film of β-FeSi2(100) grown epitaxially on an Si(001) substrate, using grazing-incidence X-ray diffraction. A 2D Laue-fit analysis taking into account instrument broadening and the double-domain effect provides residual maps as a function of the inequivalent strains ∊ b and ∊ c along the b and c axes of β-FeSi2, respectively (and domain size D), reflecting the probability of existence of homogeneous domains with fixed ∊ b , ∊ c and D, in addition to the most probable minimum residual. A 2D Laue fit with an inhomogeneous domain distribution provides a population map with ∊ b and ∊ c , reflecting strain components contributing to the film. The population map also leads to a reference residual as a guide for the strains contributing to the residual map. The advantages of the 2D Laue fits are discussed by comparison with the Scherrer, Williamson–Hall and Gaussian fitting methods for equivalent systems. The analyzed results indicate that the β-FeSi2 nanofilm was considerably small strained, which was also confirmed by transmission electron microscopy, implying a weak interface interaction between the film and the substrate.

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