scholarly journals Oxygen Ion Beam Etching of Single Crystal Diamond Chips Using an ECR-type Ion Source.

1996 ◽  
Vol 62 (10) ◽  
pp. 1459-1463 ◽  
Author(s):  
Shuji KIYOHARA ◽  
Iwao MIYAMOTO
1994 ◽  
Vol 354 ◽  
Author(s):  
Shuji Kiyohara ◽  
Iwao Miyamoto

AbstractIn order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.


2011 ◽  
Vol 20 (7) ◽  
pp. 1056-1060 ◽  
Author(s):  
S.F. Mahmud ◽  
S.A. Pahlovy ◽  
Yoshiko Sato ◽  
Iwao Miyamoto

2019 ◽  
Vol 92 ◽  
pp. 248-252 ◽  
Author(s):  
Sichen Mi ◽  
Adrien Toros ◽  
Teodoro Graziosi ◽  
Niels Quack

1982 ◽  
Vol 21 (Part 2, No. 1) ◽  
pp. L4-L6 ◽  
Author(s):  
Seitaro Matsuo ◽  
Yoshio Adachi

Vacuum ◽  
2010 ◽  
Vol 84 (12) ◽  
pp. 1423-1426 ◽  
Author(s):  
Takashi Nagase ◽  
Hiroyuki Kato ◽  
Shahjada A. Pahlovy ◽  
Iwao Miyamoto

Sign in / Sign up

Export Citation Format

Share Document