Surface morphology analysis of natural single crystal diamond chips bombarded with Ar+ ion beam

Vacuum ◽  
2010 ◽  
Vol 84 (12) ◽  
pp. 1423-1426 ◽  
Author(s):  
Takashi Nagase ◽  
Hiroyuki Kato ◽  
Shahjada A. Pahlovy ◽  
Iwao Miyamoto
Keyword(s):  
Surface Morphology ◽  
Single Crystal ◽  
Ion Beam ◽  
Morphology Analysis ◽  
Single Crystal Diamond

Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

1994 ◽  
Vol 354 ◽  
Author(s):  
Shuji Kiyohara ◽  
Iwao Miyamoto
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Incidence Angle ◽  
Ion Beam ◽  
Etching Rate ◽  
Hydrogen Ion ◽  
Hydrogen Ions ◽  
Ion Beam Etching ◽  
Single Crystal Diamond ◽  
Before And After

AbstractIn order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

AFM Study of Surface Morphology of Aluminum Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura ◽  
Shigekazu Hirayama ◽  
Yuusaku Naota
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Room Temperature ◽  
Ion Beam ◽  
Soda Lime ◽  
Silicon Single Crystal ◽  
Soda Lime Glass ◽  
Average Roughness

AbstractAluminum nitride (AlN) thin films have been synthesized by ion-beam assisted deposition method. Film deposition has been performed on the substrates of silicon single crystal, soda-lime glass and alumin A. the influence of the substrate roughness on the film roughness is studied. the substrate temperature has been kept at room temperature and 473K and the kinetic energy of the incident nitrogen ion beam and the deposition rate have been fixed to 0.5 keV and 0.07 nm/s, respectively. the microstructure of the synthesized films has been examined by X-ray diffraction (XRD) and the surface morphology has been observed by atomic force microscopy(AFM). IN the XRD patterns of films synthesized at both room temperature and 473K, the diffraction line indicating the alN (10*0) can be discerned and the broad peak composed of two lines indicating the a1N (00*2) and a1N (10*1) planes is also observed. aFM observations for 100 nm films reveal that (1) the surface of the films synthesized on the silicon single crystal and soda-lime glass substrates is uniform and smooth on the nanometer scale, (2) the average roughness of the films synthesized on the alumina substrate is similar to that of the substrate, suggesting the evaluation of the average roughness of the film itself is difficult in the case of the rough substrate, and (3) the average roughness increases with increasing the substrate temperature.

scholarly journals Surface Morphology and Microstructure Evolution of Single Crystal Diamond during Different Homoepitaxial Growth Stages

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 5964
Author(s):  
Guoqing Shao ◽  
Juan Wang ◽  
Shumiao Zhang ◽  
Yanfeng Wang ◽  
Wei Wang ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Single Crystal ◽  
Cross Section ◽  
Growth Model ◽  
Diamond Growth ◽  
Step Flow ◽  
Homoepitaxial Growth ◽  
Diamond Substrate ◽  
Single Crystal Diamond ◽  
Step Flow Growth

Homoepitaxial growth of step-flow single crystal diamond was performed by microwave plasma chemical vapor deposition system on high-pressure high-temperature diamond substrate. A coarse surface morphology with isolated particles was firstly deposited on diamond substrate as an interlayer under hillock growth model. Then, the growth model was changed to step-flow growth model for growing step-flow single crystal diamond layer on this hillock interlayer. Furthermore, the surface morphology evolution, cross-section and surface microstructure, and crystal quality of grown diamond were evaluated by scanning electron microscopy, high-resolution transmission electron microcopy, and Raman and photoluminescence spectroscopy. It was found that the surface morphology varied with deposition time under step-flow growth parameters. The cross-section topography exhibited obvious inhomogeneity in crystal structure. Additionally, the diamond growth mechanism from the microscopic point of view was revealed to illustrate the morphological and structural evolution.

Removal and characterization of focused-ion-beam-induced damaged layer on single crystal diamond surface and application to multiple depth patterning

2016 ◽  
Vol 70 ◽  
pp. 159-166 ◽  
Author(s):  
Noritaka Kawasegi ◽  
Seiya Kuroda ◽  
Noboru Morita ◽  
Kazuhito Nishimura ◽  
Makoto Yamaguchi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Diamond Surface ◽  
Single Crystal Diamond

scholarly journals Surface Morphology of the Interface Junction of CVD Mosaic Single-Crystal Diamond

Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 91 ◽  
Author(s):  
Xiwei Wang ◽  
Peng Duan ◽  
Zhenzhong Cao ◽  
Changjiang Liu ◽  
Dufu Wang ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Single Crystal ◽  
Microwave Plasma ◽  
High Stress ◽  
Central Area ◽  
Chemical Vapor ◽  
Movement Direction ◽  
Average Growth ◽  
Step Flow ◽  
Single Crystal Diamond

The diamond mosaic grown on the single-crystal diamond substrates by the microwave plasma chemical vapor deposition (MPCVD) method has been studied. The average growth rate was about 16–17 μm/h during 48 hours’ growth. The surface morphologies of the as-grown diamond layer were observed. It was found that the step flow was able to move across the substrates and cover the junction interface. Raman spectroscopic mapping in the central area of the junction revealed the high stress region movement across the junction interface from one substrate to the other for about 200–400 μm. High-resolution X-ray diffractometry (HRXRD) results proved that the surface step flow movement direction had nothing to do with the off-axis directions of the original substrates. It was found that the surface height difference of substrate was the main driving force for the step flow movement, junction combination and surface morphology changing. The mechanism of the mosaic interface junction combination and step flow transformation on the mosaic surface was proposed.

Impact of methane concentration on surface morphology and boron incorporation of heavily boron-doped single crystal diamond layers

Carbon ◽  
2021 ◽  
Vol 172 ◽  
pp. 463-473 ◽  
Author(s):  
Rozita Rouzbahani ◽  
Shannon S. Nicley ◽  
Danny E.P. Vanpoucke ◽  
Fernando Lloret ◽  
Paulius Pobedinskas ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Single Crystal ◽  
Methane Concentration ◽  
Boron Doped ◽  
Single Crystal Diamond

Effect of Growth Parameters on Single Crystal Diamond Deposition by DC Arc Plasma Jet CVD

2012 ◽  
Vol 490-495 ◽  
pp. 3094-3099 ◽  
Author(s):  
Li Fu Hei ◽  
Jie Liu ◽  
Fan Xiu Lu ◽  
Cheng Ming Li ◽  
Jian Hua Song ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Single Crystal ◽  
Growth Parameters ◽  
Plasma Jet ◽  
Typical Feature ◽  
Arc Plasma ◽  
Diamond Sample ◽  
Single Crystal Diamond ◽  
Dc Arc

Homoepitaxial diamond layers were grown on commercial 3.5 x 3.5 x 1.2 mm3 HPHT synthetic type Ib (100) single crystal diamond plates using a DC Arc Plasma Jet CVD operating at gas recycling mode. The effects of substrate temperature and CH4/H2 ratio on the surface morphology, the growth rate and the quality of the synthesized diamond have been studied using optical microscopy and Raman spectroscopy. With no intentional nitrogen added, the growth rate up to 12.3µm/h has been obtained in the single crystal diamond sample deposited at 1000 °C with CH4/H2=0.625%, exhibiting relatively smooth surface morphology without any growth hillocks nor non-epitaxial crystallites, and presenting the typical feature of the epitaxial step-flow growth. The full width at half maximum (FWHM) of the Raman spectra was 2.08 cm-1, which was close to that of the natural type IIa single crystal diamond.

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