Annealing effect on the structural and Morphological properties of Organic Semiconductor Alq3:C60 blend Thin Films

2018 ◽  
Vol 59 (3A) ◽  
2019 ◽  
Vol 19 (11) ◽  
pp. 7244-7250 ◽  
Author(s):  
Violeta Alvarez-Venicio ◽  
Rafael O. Arcos-Ramos ◽  
José Alfonso Hernández-Rojas ◽  
Jaime Octavio Guerra-Pulido ◽  
Vladimir A. Basiuk ◽  
...  

The synthesis of a novel indacenedithiophene derivative (IDT-DPA) is described, which exhibits semiconducting behavior. Its properties were measured by means of UV-visible and fluorescence spectroscopies using toluene as solvent. An extinction molar coefficient of 2.05×104 M−1 cm−1 and a Stokes shift of 50 nm were obtained. A theoretical study was performed using the density functional theory, from which HOMO–LUMO band gap of 1.711 eV was calculated. IDT-DPA was deposited on the water-air interface to form Langmuir monolayers. π-A curves and hysteresis were measured showing reversibility behavior. The monolayers were transferred to glass substrates as Langmuir-Blodgett thin films. Their morphological properties were characterized by using scanning electron and atomic force microscopy, which showed that the films tend to form clusters with a homogeneous distribution. Absorption and emission spectra of the films were measured, from which the optical band gap and Stocks shift were derived. Based on the electronic properties and light emission spectra of IDT-DPA, this compound can be proposed for the applications in organic lightemitting diodes and other organic semiconductor devices.


2019 ◽  
Vol 19 (7) ◽  
pp. 3777-3784
Author(s):  
Jakub Rozbořil ◽  
Katharina Broch ◽  
Roland Resel ◽  
Ondřej Caha ◽  
Filip Münz ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1409
Author(s):  
Ofelia Durante ◽  
Cinzia Di Giorgio ◽  
Veronica Granata ◽  
Joshua Neilson ◽  
Rosalba Fittipaldi ◽  
...  

Among all transition metal oxides, titanium dioxide (TiO2) is one of the most intensively investigated materials due to its large range of applications, both in the amorphous and crystalline forms. We have produced amorphous TiO2 thin films by means of room temperature ion-plasma assisted e-beam deposition, and we have heat-treated the samples to study the onset of crystallization. Herein, we have detailed the earliest stage and the evolution of crystallization, as a function of both the annealing temperature, in the range 250–1000 °C, and the TiO2 thickness, varying between 5 and 200 nm. We have explored the structural and morphological properties of the as grown and heat-treated samples with Atomic Force Microscopy, Scanning Electron Microscopy, X-ray Diffractometry, and Raman spectroscopy. We have observed an increasing crystallization onset temperature as the film thickness is reduced, as well as remarkable differences in the crystallization evolution, depending on the film thickness. Moreover, we have shown a strong cross-talking among the complementary techniques used displaying that also surface imaging can provide distinctive information on material crystallization. Finally, we have also explored the phonon lifetime as a function of the TiO2 thickness and annealing temperature, both ultimately affecting the degree of crystallinity.


Author(s):  
Massimiliano Cavallini ◽  
Ilse Manet ◽  
Marco Brucale ◽  
Laura Favaretto ◽  
Manuela Melucci ◽  
...  

Here, we applied rubbing on thiophene derivate organic semiconductor thin films to induce a reversible mechanical amorphisation. Amorphisation is associated with fluorescence switching, which is regulated by the polymorphic nature...


2013 ◽  
Vol 24 (12) ◽  
pp. 4925-4931
Author(s):  
Syed Mansoor Ali ◽  
Jan Muhammad ◽  
Syed Tajammul Hussain ◽  
Syed Danish Ali ◽  
Naeem Ur Rehman ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document