Investigation of Helium Assisted Low Frequency Plasma for Liquid Oxygen and Hydrocarbon Ignition

2011 ◽  
Author(s):  
Taiichi Nagata ◽  
Jose Torres ◽  
John Culbertson ◽  
Toshiaki Iizuka ◽  
Eric Besnard
Keyword(s):  
Low Frequency ◽  
Liquid Oxygen ◽  
Frequency Plasma ◽  
Hydrocarbon Ignition

The Properties Of a-Si:H/c-Si Heterostructures Prepared By 55 kHz Pecvd For Solar Cell Application

1997 ◽  
Vol 485 ◽  
Author(s):  
B. G Budaguan ◽  
A. A. Aivazov ◽  
A. A. Sherchenkov ◽  
A. V Blrjukov ◽  
V. D. Chernomordic ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Low Frequency ◽  
Reverse Current ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Solar Cell Application ◽  
Current Voltage ◽  
Frequency Plasma ◽  
Device Applications

AbstractIn this work a-Si:H/c-Si heterostructures with good electronic properties of a-Si:H were prepared by 55 kHz Plasma Enhanced Chemical Vapor Deposition (PECVD). Currentvoltage and capacitance-voltage characteristics of a-Si:H/c-Si heterostructures were measuredto investigate the influence of low frequency plasma on the growing film and amorphous silicon/crystalline silicon boundary. It was established that the interface state density is low enough for device applications (<2.1010 cm−2). The current voltage measurements suggest that, when forward biased, space-charge-limited current determines the transport mechanism in a- Si:H/c-Si heterostructures, while reverse current is ascribed to the generation current in a-Si:H and c-Si depletion layers.

Low frequency plasma deposition and characterization of Si1−xGex:H,F films

2004 ◽  
Vol 338-340 ◽  
pp. 91-96 ◽  
Author(s):  
R. Ambrosio ◽  
A. Torres ◽  
A. Kosarev ◽  
A. Ilinski ◽  
C. Zúñiga ◽  
...  
Keyword(s):  
Plasma Deposition ◽  
Low Frequency ◽  
Frequency Plasma
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