Comparative Analysis of Carbon and Fluorocarbon Coatings Obtained by Means of a Low-Frequency Plasma Torch under Atmospheric Pressure

Author(s):  
A. N. Lyamin ◽  
A. V. Shvedov ◽  
V. M. Elinson ◽  
S. V. Dvoryak
2007 ◽  
Vol 364-366 ◽  
pp. 340-345 ◽  
Author(s):  
Ju Fan Zhang ◽  
Bo Wang ◽  
Shen Dong

As there are always certain defects on the final surface of large-scale lightweight mirrors, which are formed in traditional mechanical polishing process, such as microcracks, lattice disturbances, plastic deformation, and so on, an atmospheric pressure plasma polishing method is a good solution to this problem. As a key component, the design of the capacitance coupling atmospheric pressure radio-frequency plasma torch is introduced. The designed torch uses water cooled coaxial aluminium electrodes with special treatment to avoid arcing between them. In normal machining process, the mixture of reaction gas and plasma gas with optimum ratio is input into the plasma torch. Then, excited by radio-frequency power, reaction gas is ionized in the plasma so as to create high density and energy reactive radicals under atmospheric pressure. The radicals cause chemical reactions with the atoms on the part surface, which performs an effective atomscale removal process. As the machining process is chemical in nature, this method avoids surface/subsurface defects mentioned above. Furthermore, initial experiment data analysis has proved that the atmospheric pressure plasma polishing method is effective and reliable, as well as demonstrates the validity of the designed plasma torch.


2011 ◽  
Vol 18 (4) ◽  
pp. 043503 ◽  
Author(s):  
Dan Bee Kim ◽  
H. Jung ◽  
B. Gweon ◽  
S. Y. Moon ◽  
J. K. Rhee ◽  
...  

1997 ◽  
Vol 485 ◽  
Author(s):  
B. G Budaguan ◽  
A. A. Aivazov ◽  
A. A. Sherchenkov ◽  
A. V Blrjukov ◽  
V. D. Chernomordic ◽  
...  

AbstractIn this work a-Si:H/c-Si heterostructures with good electronic properties of a-Si:H were prepared by 55 kHz Plasma Enhanced Chemical Vapor Deposition (PECVD). Currentvoltage and capacitance-voltage characteristics of a-Si:H/c-Si heterostructures were measuredto investigate the influence of low frequency plasma on the growing film and amorphous silicon/crystalline silicon boundary. It was established that the interface state density is low enough for device applications (<2.1010 cm−2). The current voltage measurements suggest that, when forward biased, space-charge-limited current determines the transport mechanism in a- Si:H/c-Si heterostructures, while reverse current is ascribed to the generation current in a-Si:H and c-Si depletion layers.


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