scholarly journals Efficient IR Drop Analysis and Alleviation Methodologies Using Dual Threshold Voltages with Gate Resizing Techniques

2015 ◽  
Vol 10 (3) ◽  
pp. 147-157
Author(s):  
Ching-Hwa Cheng

IR drop impacts circuit delay time and reliability. The IR drop comes from unexpected peak current (Ipeak) consumption. This paper proposes an efficient methodology with an in-house EDA tool named IPR to analyze and reduce the Ipeak. IPR adopts dual threshold voltages (Vth) and gate resizing technique; it also lowers the short, dynamic, and static leakage current consumption without degrading the system performance. IPR consists of two parts: Ipeak analysis and Ipeak alleviation processes. Nonlinear static/dynamic timing analysis techniques, in cooperation with dual Vth cell library, provides two kinds of accurate Ipeak calculation methods used in IPR. Using the incremental timing analysis, the Ipeak processing time can be accelerated. Demonstration of the ISCAS89 benchmark circuits shows that IPR can reduce Ipeak by 39%, power consumption by 14%, and delay time by 19%. In addition, it provides 334 times faster computation with 2% and 10% estimation errors of the Ipeak and power in gate-level, respectively, as compared to circuit level simulation results.

2020 ◽  
Vol 30 (7) ◽  
pp. 1-5
Author(s):  
Xiuting Li ◽  
Xiaoping Gao ◽  
Jie Ren ◽  
Ruoting Yang ◽  
Zhendong Hong ◽  
...  
Keyword(s):  

Electronics ◽  
2020 ◽  
Vol 9 (4) ◽  
pp. 580
Author(s):  
Peng Cao ◽  
Wei Bao ◽  
Jingjing Guo

The wide voltage design methodology has been widely employed in the state-of-the-art circuit design with the advantage of remarkable power reduction and energy efficiency enhancement. However, the timing verification issue for multiple PVT (process–voltage–temperature) corners rises due to unacceptable analysis effort increase for multiple supply voltage nodes. Moreover, the foundry-provided timing libraries in the traditional STA (static timing analysis) approach are only available for the nominal supply voltage with limited voltage scaling, which cannot support timing verification for low voltages down to near- or sub-threshold voltages. In this paper, a learning-based approach for wide voltage design is proposed where feature engineering is performed to enhance the correlation among PVT corners based on a dilated CNN (convolutional neural network) model, and an ensemble model is utilized with two-layer stacking to improve timing prediction accuracy. The proposed method was verified with a commercial RISC (reduced instruction set computer) core under the supply voltage nodes ranging from 0.5 V to 0.9 V. Experimental results demonstrate that the prediction error is limited by 4.9% and 7.9%, respectively, within and across process corners for various working temperatures, which achieves up to 4.4× and 3.9× precision enhancement compared with related learning-based methods.


Author(s):  
Shih-Hung Weng ◽  
Yu-Min Kuo ◽  
Shih-Chieh Chang ◽  
Malgorzata Marek-Sadowska
Keyword(s):  

2005 ◽  
Vol 152 (2) ◽  
pp. 133 ◽  
Author(s):  
J.A. Montiel-Nelson ◽  
J. Sosa ◽  
H. Navarro ◽  
R. Sarmiento ◽  
A. Nunez

Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


CICTP 2020 ◽  
2020 ◽  
Author(s):  
Jing Shi ◽  
Qiyuan Peng ◽  
Ling Liu

2020 ◽  
pp. 144-148

Chaos synchronization of delayed quantum dot light emitting diode has been studied theortetically which are coupled via the unidirectional and bidirectional. at synchronization of chaotic, The dynamics is identical with delayed optical feedback for those coupling methods. Depending on the coupling parameters and delay time the system exhibits complete synchronization, . Under proper conditions, the receiver quantum dot light emitting diode can be satisfactorily synchronized with the transmitter quantum dot light emitting diode due to the optical feedback effect.


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