A new method of preparing monocored water-loaded micro capsules using interfacial polymer deposition process

ABSTRACTRecent progress in microfabrication technologies for advanced VLSI devices, such as 16M and 64MDRAM, is presented. First, an EB delineator with a vector-scanned VSB on a moving stage has been developed for printing 0.25 μm patterns employing PMMA, high dose exposure, and 50 KeV EB. Optical lithography also has been extended toward lower submicron geometry. A Krf excimer laser reduction projection system, using a quartz/CaF2 lens, resolves successfully 0.35 μm patterns. Ga field ion beam technology has been developed with new applications in fuse-cutting of redundancy and in optimizing sense amplifier by cutting transistor gates in the SRAM device. For fine line etching technology, collimated reactive ions produced by 10−3 Torr magnetron discharge achieves deep Si trench etching and tapered Al etching by using a polymer deposition process in addition to the original thin sidewall film. Finally, a damage-free excimer laser etching process has been developed which can etch n+ poly-Si with resist mask and with pattern transfer using an optics down to 0.5 μm and 0.9 μm resolutions respectively.

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Encapsulation of Low-Molecular-Weight Drugs into Polymer Multilayer Capsules Templated on Vaterite CaCO3 Crystals

Micromachines ◽

10.3390/mi11080717 ◽

2020 ◽

Vol 11 (8) ◽

pp. 717 ◽

Cited By ~ 1

Author(s):

Jack Campbell ◽

Georgia Kastania ◽

Dmitry Volodkin

Keyword(s):

Drug Delivery ◽

Molecular Weight ◽

Drug Loading ◽

Drug Carriers ◽

Deposition Process ◽

Vital Role ◽

Low Molecular Weight ◽

Layer By Layer ◽

Polymer Deposition ◽

Smart Drug

Polyelectrolyte multilayer capsules (PEMCs) templated onto biocompatible and easily degradable vaterite CaCO3 crystals via the layer-by-layer (LbL) polymer deposition process have served as multifunctional and tailor-made vehicles for advanced drug delivery. Since the last two decades, the PEMCs were utilized for effective encapsulation and controlled release of bioactive macromolecules (proteins, nucleic acids, etc.). However, their capacity to host low-molecular-weight (LMW) drugs (<1–2 kDa) has been demonstrated rather recently due to a limited retention ability of multilayers to small molecules. The safe and controlled delivery of LMW drugs plays a vital role for the treatment of cancers and other diseases, and, due to their tunable and inherent properties, PEMCs have shown to be good candidates for smart drug delivery. Herein, we summarize recent progress on the encapsulation of LMW drugs into PEMCs templated onto vaterite CaCO3 crystals. The drug loading and release mechanisms, advantages and limitations of the PEMCs as LMW drug carriers, as well as bio-applications of drug-laden capsules are discussed based upon the recent literature findings.

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Prototype sensor and data acquisition system for the CILAP polymer deposition process

Nineteenth IEEE/CPMT International Electronics Manufacturing Technology Symposium ◽

10.1109/iemt.1996.559786 ◽

2002 ◽

Cited By ~ 2

Author(s):

A. Krauss ◽

T. Miller

Keyword(s):

Data Acquisition ◽

Data Acquisition System ◽

Deposition Process ◽

Acquisition System ◽

Polymer Deposition

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Reduction of Nanowire Agglomeration via an Intermediate Membrane in Nanowires Preparation for Nanosensors Application

Volume 10: Micro- and Nano-Systems Engineering and Packaging ◽

10.1115/imece2015-53819 ◽

2015 ◽

Cited By ~ 1

Author(s):

Mohammad Beheshti ◽

Sunggook Park ◽

Junseo Choi ◽

X. Geng ◽

Elizabeth Podlaha-Murphy

Keyword(s):

Tilt Angle ◽

Silicon Surface ◽

Lab On A Chip ◽

Deposition Process ◽

New Method ◽

Preparation Process ◽

Single Nanowires ◽

The Common

Nanowires are widely used as sensing components for lab-on-a-chip devices. One major problem in utilizing pre-grown nanowires in lab-on-a-chip applications is the agglomeration of nanowires during their preparation process. The common methods to reduce the agglomeration of nanowires include stirring, sonication and using of surfactants. However, these methods break the long nanowires and are not efficient to produce enough single nanowires. This paper shows a new method to improve the deposition process of individual nanowires. An intermediate membrane was used for the deposition of the nanowires after their preparation process. The membrane helps to filter the nanowire agglomerates and to deposit separated individual nanowires over a silicon surface underneath. The study also shows that the number of single nanowires is increased by increasing the tilt angle of the membrane. The method also helps achieving single long nanowires.

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Additive manufacturing of PA12 carbon nanotube composites with a novel laser polymer deposition process

Journal of Applied Polymer Science ◽

10.1002/app.50395 ◽

2020 ◽

pp. 50395

Author(s):

Yannick L. Wencke ◽

Yunus Kutlu ◽

Malte Seefeldt ◽

Cemal Esen ◽

Andreas Ostendorf ◽

...

Keyword(s):

Carbon Nanotube ◽

Additive Manufacturing ◽

Deposition Process ◽

Nanotube Composites ◽

Polymer Deposition ◽

Carbon Nanotube Composites

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Development of the flow behavior model for 3D scaffold fabrication in the polymer deposition process by a heating method

Journal of Micromechanics and Microengineering ◽

10.1088/0960-1317/19/10/105003 ◽

2009 ◽

Vol 19 (10) ◽

pp. 105003 ◽

Cited By ~ 4

Author(s):

Jong Young Kim ◽

Jung Kyu Park ◽

Sei Kwang Hahn ◽

Tai Hun Kwon ◽

Dong-Woo Cho

Keyword(s):

Flow Behavior ◽

Deposition Process ◽

Behavior Model ◽

3D Scaffold ◽

Scaffold Fabrication ◽

Heating Method ◽

Polymer Deposition

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A New Method for Real-Time Plasma Etch Process Control: Correlation of Contact Resistance with Nondestructive Modulated Reflectance

MRS Proceedings ◽

10.1557/proc-98-255 ◽

1987 ◽

Vol 98 ◽

Author(s):

Alp Malazgirt ◽

W. Lee Smith

Keyword(s):

Integrated Circuits ◽

Contact Resistance ◽

Thermal Wave ◽

Silicon Layer ◽

New Method ◽

Laser Beams ◽

Power Laser ◽

Plasma Etch ◽

Wave Measurements ◽

Polymer Deposition

ABSTRACTWe have established a correlation between contact resistance, measured on VLSI MOS integrated circuits at final electrical test, with thermal wave modulated reflectance signal measured just after the metal contact hole etch process. This correlation exists because etching past the time that a particular contact hole is cleared of oxide (i.e., overetching) causes (a) a thinning of the underlying shallow ion-implanted low-resistivity silicon layer with a resulting increase in the contact resistance, and (b) damage to the silicon. Damape was measured on the actual product wafers with the thermal wave modulated reflectance method employing low-power laser beams in a noncontact, nondestructive manner. Hence, the thermal wave measurements of damage make it possible to monitor the etch processing on the product wafers.Our results show monotonic increases in both the damage (mod. reflec. from 30 to 260 units) and contact resistance (from 40 to 180 ohms/contact) with overetch time up to 1.5 min., at which point polymer deposition alters the dependence by screening the silicon surface. We show results obtained for three categories of VLSI devices (SRAM, PROM, FIFO), and report on the advantages and limitations of this new method for realtime plasma etch inspection.

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Microfabrication Technologies for Advanced VLSI Devices

MRS Proceedings ◽

10.1557/proc-75-17 ◽

1986 ◽

Vol 75 ◽

Author(s):

Y. Horiike ◽

R. Yoshikawa ◽

H. Okano ◽

M. Nakase ◽

H. Komano ◽

...

Keyword(s):

Excimer Laser ◽

Ion Beam ◽

Deposition Process ◽

High Dose ◽

Magnetron Discharge ◽

Projection System ◽

Sense Amplifier ◽

Polymer Deposition ◽

Krf Excimer Laser ◽

New Applications

AbstractRecent progress in microfabrication technologies for advanced VLSI devices, such as 16M and 64MDRAM, is presented. First, an EB delineator with a vector-scanned VSB on a moving stage has been developed for printing 0.25 μm patterns employing PMMA, high dose exposure, and 50 KeV EB. Optical lithography also has been extended toward lower submicron geometry. A Krf excimer laser reduction projection system, using a quartz/CaF2 lens, resolves successfully 0.35 μm patterns. Ga field ion beam technology has been developed with new applications in fuse-cutting of redundancy and in optimizing sense amplifier by cutting transistor gates in the SRAM device. For fine line etching technology, collimated reactive ions produced by 10-3 Torr magnetron discharge achieves deep Si trench etching and tapered Al etching by using a polymer deposition process in addition to the original thin sidewall film. Finally, a damage-free excimer laser etching process has been developed which can etch n+ poly-Si with resist mask and with pattern transfer using an optics down to 0.5 μm and 0.9 μm resolutions respectively.

Download Full-text