scholarly journals Recent Progress in Researches on Sputter Deposition Process

Shinku ◽  
2007 ◽  
Vol 50 (1) ◽  
pp. 3-8
Author(s):  
Takeo NAKANO
Keyword(s):  
Recent Progress ◽  
Deposition Process ◽  
Sputter Deposition

The sputter deposition process: a Monte-Carlo study

Vacuum ◽  
1991 ◽  
Vol 42 (1-2) ◽  
pp. 47-51 ◽  
Author(s):  
Thomas Heberlein ◽  
Gunter Krautheim ◽  
Werner Wuttke
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Deposition Process ◽  
Sputter Deposition

Substrate amorphization induced by the sputter deposition process: Geometrical aspects

1995 ◽  
Vol 13 (2) ◽  
pp. 394-399 ◽  
Author(s):  
S. Valeri ◽  
S. Altieri ◽  
T. Di Domenico ◽  
R. Verucchi
Keyword(s):  
Deposition Process ◽  
Sputter Deposition

scholarly journals Sputter Deposition of Semiconductor Superlattices for Thermoelectric Applications

1996 ◽  
Vol 450 ◽  
Author(s):  
Andrew V. Wagner ◽  
Ronald J. Foreman ◽  
Joseph C. Farmer ◽  
Troy W. Barbee
Keyword(s):  
Film Growth ◽  
Lead Telluride ◽  
Deposition Process ◽  
Growth Conditions ◽  
Sputter Deposition ◽  
High Rate ◽  
Dramatic Improvement ◽  
High Deposition Rate ◽  
High Quality ◽  
Quantum Confined

ABSTRACTTheoretical dramatic improvement of the thermoelectric properties of materials by using quantum confinement in novel semiconductor nanostructures has lead to considerable interest in the thermoelectric community. Therefore, we are exploring the critical materials issues for fabrication of quantum confined structures by magnetron sputtering in the lead telluride and bismuth telluride families of materials. We have synthesized modulated structures from thermoelectric materials with bilayer periods of as little as 3.2 nm and shown that they are stable at deposition temperatures high enough to grow quality films. Issues critical to high quality film growth have been investigated such as nucleation and growth conditions and their effect on crystal orientation and growth morphology. These investigations show that nucleating the film at a temperature below the growth temperature of optimum electronic properties produces high quality films. Our work with sputter deposition, which is inherently a high rate deposition process, builds the technological base necessary to develop economical production of these advanced materials. High deposition rate is critical since, even if efficiencies comparable with CFC based refrigeration systems can be achieved, large quantities of quantum confined materials will be necessary for cost-competitive uses.

Mo-Si Interface Formation by Ion Beam Sputter Deposition

2002 ◽  
Vol 749 ◽  
Author(s):  
A. Köhler ◽  
J.W. Gerlach ◽  
T. Höche ◽  
T. Chassé ◽  
H. Neumann ◽  
...  
Keyword(s):  
Ion Beam ◽  
Deposition Process ◽  
Sputter Deposition ◽  
X Ray Diffraction ◽  
Optical Index ◽  
Transmission Electron ◽  
Euv Lithography ◽  
Nominal Thickness ◽  
Interface Layers ◽  
Ion Beam Sputter Deposition

ABSTRACTMolybdenum-silicon (Mo-Si) multilayers for EUV lithography were prepared by ion beam sputter deposition at room temperature. The multilayer structure was determined by X-ray-diffraction and transmission electron microscopy. Textured molybdenum layers with preferential (110) orientation normal to the surface are observed. At the interfaces of all Mo-Si and Si-Mo pairs additional intermixing resulting in molybdenum silicide layers were noticed. These layers have a thickness of about 0.7 and 1.5 nm each, respectively. Due to this intermixing, the nominal thickness of the Mo and Si layers is reduced. The optical index contrast at the interface is also expected to decrease. This is in accordance with the obtained EUV reflectivity results of 64–65% at 13.4 nm which remains below the theoretical value of 74%. The formation of the silicide interface layers is discussed and an optimized deposition process focused on narrowing these transition layers is suggested.

The Effects of Collimator Life Time on the Ti and Tin Film Growth Rates and Conformalities in Sputter Deposition Processes: Experiments and Simulations

1995 ◽  
Vol 387 ◽  
Author(s):  
Hung Liao ◽  
Hannes Stippel ◽  
Krishna Reddy ◽  
Sam Geha ◽  
Kevin Brown ◽  
...  
Keyword(s):  
Growth Rates ◽  
Film Growth ◽  
Side Wall ◽  
Life Time ◽  
Deposition Process ◽  
Sputter Deposition ◽  
Cross Sectional ◽  
Tin Film ◽  
Side Walls ◽  
Deposition Processes

AbstractExperimental and simulation studies were conducted in an attempt to understand the effects of collimator life time on the Ti and TiN film growth rates and conformalities in sputter deposition processes. The Ti and TiN films were deposited with and without collimation. The hexagonal cells of the collimator used in this study have a 1:1 aspect ratio. A Monte Carlo based simulator was used to calculate the angular distributions of species exiting from a collimator cell and the percentage decrease in the rate of film growth as a function of the collimator life time. Then, a low pressure deposition process simulator, EVOLVE, was used to predict the conformalities of deposited films in contacts or vias, assuming that the films were uniformly deposited on the side-walls of collimator cells. We conclude that the loss in growth rate is largely due to the shrinkage in the cross sectional area of the collimator cell inlets. We arrive at this conclusion after comparing an estimated film thickness on the collimator side-walls with experimental measurements. With extended collimator usage, the predicted and experimental film profiles in contacts or vias show increasing bottom coverage and decreasing side-wall coverages.

scholarly journals COMPUTER SIMULATION OF SPUTTER DEPOSITION PROCESS FOR THIN FILM MEDIA

1994 ◽  
Vol 18 (S_2_PMRC_94_2) ◽  
pp. S2_7-7
Author(s):  
Tokyo Institute of Polytechnics
Keyword(s):  
Thin Film ◽  
Computer Simulation ◽  
Deposition Process ◽  
Sputter Deposition

Simultaneous stoichiometric composition and highly (00l) orientation of flexible Bi2Te3thin films via optimising the DC magnetron sputter-deposition process

2019 ◽  
Vol 773 ◽  
pp. 78-85 ◽  
Author(s):  
Nuttakrit Somdock ◽  
Supasak Kianwimol ◽  
Adul Harnwunggmoung ◽  
Aparporn Sakulkalavek ◽  
Rachsak Sakdanuphab
Keyword(s):  
Stoichiometric Composition ◽  
Deposition Process ◽  
Sputter Deposition ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

Analysis of the Transport of Ionized Titanium Atoms in a Highly Ionized Sputter Deposition Process

2007 ◽  
Vol 4 (S1) ◽  
pp. S424-S429 ◽  
Author(s):  
Ludovic de Poucques ◽  
Jean-Christophe Imbert ◽  
Caroline Boisse-Laporte ◽  
Jean Bretagne ◽  
Mihaï Ganciu ◽  
...  
Keyword(s):  
Deposition Process ◽  
Sputter Deposition

Ion-beam sputter deposition process for Y1Ba2Cu3O7-δ thin-film structures

1994 ◽  
Vol 9 (11) ◽  
pp. 2747-2760 ◽  
Author(s):  
J-P. Krumme ◽  
V. Doormann ◽  
F. Welz ◽  
O. Dösssel ◽  
H. van Hal
Keyword(s):  
Ion Beam ◽  
Salient Feature ◽  
Charge Compensation ◽  
Deposition Process ◽  
Plasma Electron ◽  
Ion Source ◽  
Sputter Deposition ◽  
Morphological Properties ◽  
Rf Plasma ◽  
Ion Beam Sputter Deposition

Ion-beam sputter deposition (IBS) has been developed to a fully oxygen-compatible technology for growth of complex oxides, such as Y1Ba2Cu3O7−δ (YBCO) thin films. The IBS system consists of an rf-plasma ion source with molybdenum grids for sputtering, a dc-plasma electron source for space charge compensation, stoichiometric YBCO and NGO targets, a beam chopper with BaO2, Cu, and Nd blades for stoichiometry control, and an ECR-oxygen-plasma source for in situ film oxidation and photoresist removal. Due to its complexity the IBS process is fully computer-controlled. A salient feature of IBS is the excellent crystallographic and morphological properties of thin (100)/(010)- and (103)-oriented YBCO films on SrTiO3 (STO) and NdGaO3 (NGO) substrates. Sharp interfaces and good superconducting properties render this technology feasible for the fabrication of SIS-ramp-junction SQUID's.

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