Assessing the Power of Electron Back Scattering Diffraction Characterization of Deformed F-138 Steel from the View Point of Crystal Diffraction

2014 ◽  
Vol 51 (9) ◽  
pp. 634-655
Author(s):  
R. E. Bolmaro ◽  
M. C. Avalos ◽  
N. S. De Vincentis ◽  
A. M. Kliauga ◽  
H.-G. Brokmeier
Keyword(s):  
View Point ◽  
Back Scattering

Fabrication and Characterization of Biocomposite Using Grewia Optiva Fibre (i.e. Bhimal) Reinforced Polyvinyl Alcohol (PVA)

2015 ◽  
Vol 1105 ◽  
pp. 51-55 ◽  
Author(s):  
K.M. Gupta ◽  
Kishor Kalauni
Keyword(s):  
Mechanical Properties ◽  
Tensile Strength ◽  
Natural Fibre ◽  
Fabrication Method ◽  
View Point ◽  
Engineering Material ◽  
Fibre Composites ◽  
Grewia Optiva ◽  
Fabrication And Characterization

Bhimal fibres are quite a newer kind of bio-degradable fibres. They have never been heard before in literatures from the view point of their utility as engineering material. These fibres have been utilized for investigation of their properties. Characterization of this fibre is essential to determine its properties for further use as reinforcing fibre in polymeric, bio-degradable and other kinds of matrix. With this objective, the fabrication method and other mechanical properties of Bhimal-reinforced-PVA biocomposite have been discussed. The stress-strain curves and load-deflection characteristics are obtained. The tensile, compressive, flexure and impact strengths have been calculated. The results are shown in tables and graphs. The results obtained are compared with other existing natural fibre biocomposites. From the observations, it has been concluded that the tensile strength of Bhimal-reinforced-PVA biocomposite is higher than other natural fibre composites. Hence these can be used as reinforcement to produce much lighter weight biocomposites.

Preparation and Characterization of Zn-Se Bilayer Structure

2007 ◽  
Vol 31 ◽  
pp. 153-157
Author(s):  
M. Singh ◽  
J.S. Arora ◽  
Kamlendra Awasthi ◽  
R. Nathawat ◽  
Y.K. Vijay
Keyword(s):  
Grain Size ◽  
Annealing Temperature ◽  
Hexagonal Structure ◽  
Scattering Data ◽  
Bilayer Structure ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
Rutherford Back Scattering ◽  
Back Scattering

The Zn-Se bilayer structure prepared using thermal evaporation method at pressure 10-5 Torr. These films annealed in the vacuum for two hours on different constant temperatures. The optical band gap was found to be varying with annealing temperature due to removal of defects and increase in grain size. It was also observed by the X-ray diffraction pattern the grain size of the film increase with annealing temperature. The lattice constant of hexagonal structure of these films is found to be a =b=4.42Å and c=5.68Å. The dominant peaks to be at 23.2°,28° and 43.9° having values (100), (002) and (111) respectively. The Rutherford back scattering data of these films confirmed the mixing of elements with time.

Nondestructive Characterization of GaN Films Grown at Low and High Temperatures

1999 ◽  
Vol 591 ◽  
Author(s):  
C.H. Yana ◽  
H.W. Yao ◽  
J.M. Van Hove ◽  
A.M. Wowchak ◽  
P.P. Chow ◽  
...  
Keyword(s):  
Surface Roughness ◽  
High Temperatures ◽  
Sapphire Substrates ◽  
Wurtzite Crystal Structure ◽  
Phonon Spectra ◽  
Scattering Geometry ◽  
Back Scattering ◽  
Nondestructive Characterization

ABSTRACTGaN films grown on GaAs and sapphire substrates by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE) at both low and high temperatures (LT and HT) were characterized by Raman scattering and variable angle spectroscopic ellipsometry (VASE). Optical phonon spectra of GaN films are obtained through back-scattering geometry. Crystal quality of these films was qualitatively examined using phonon line-width. Phonon spectra showed that the HT GaN has wurtzite crystal structure, while LT GaN and GaN/GaAs have cubic-like structures. Thickness nonuniformity and defect-related absorption can be characterized by pseudo dielectric functions directly. Surface roughness also can be determined by using an effective-medium approximation (EMA) over-layer in a VASE analysis. Anisotropic optical constants of GaN, both ordinary and extraordinary, were obtained in the spectral range of 0.75 to 6.5 eV with the consideration of surface roughness, through the small and large angles of incidence, respectively. The film thickness of the GaN was accurately determined via the analysis as well.

scholarly journals Characterization of Back-Scattering and Multipath in a Suburban Area after the Calibration of an X-Band Commercial Radar

Sensors ◽  
2020 ◽  
Vol 20 (2) ◽  
pp. 463 ◽  
Author(s):  
Gaspare Galati ◽  
Gabriele Pavan ◽  
Christoph Wasserzier
Keyword(s):  
Radar Detection ◽  
Related Field ◽  
Online Evaluation ◽  
Area Of Interest ◽  
X Band ◽  
Back Scattering ◽  
Precise Quantification ◽  
Great Relevance ◽  
Detection Capabilities

The increasing interest in the radar detection of low-elevation and small-size targets in complicated ground environments (such as urban, suburban, and mixed country areas) calls for a precise quantification of the radar detection capabilities in those areas. Hence, a set of procedures is devised and tested, both theoretically and experimentally, using a commercial X-band radar, to (i) calibrate the radar sensor (with an online evaluation of its losses) using standard scatterers, (ii) measure the multipath effect and compensate for it, and (iii) create “true radar cross section” maps of the area of interest for both point and distributed clutter. The above methods and the related field results are aimed at future qualification procedures and practical usage of small, cheap, and easily moveable radars for the detection of low-observable air targets, such as unmanned air vehicles/systems (UAV/UAS), in difficult ground areas. A significant set of experimental results as discussed in the paper confirms the great relevance of multipath in ground-based radar detection, with the need for correcting measures.

RAMAN, DIELECTRIC AND OPTICAL INVESTIGATIONS OF DLC THIN FILMS

2009 ◽  
Vol 16 (05) ◽  
pp. 731-736 ◽  
Author(s):  
RASOUL MALEKFAR ◽  
HAMID MOTAHARI ◽  
JALAL ROHOLLAHNEJAD ◽  
FATEMEH SAHRAIYAN
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Calculated Data ◽  
Optical Parameters ◽  
Reflection Spectroscopy ◽  
Back Scattering ◽  
Ft Ir ◽  
Sem Imaging ◽  
Ft Ir Spectroscopy

Diamond-like carbon, DLC, thin films which is an amorphous hydrogenated form of carbon, a-C:H , has been synthesized by CVD method. SEM imaging, back-scattering Raman spectroscopy and reflected FT-IR spectroscopy have been used for characterization of the synthesized thin films. Kramers–Kronig dispersion relations have been used for the calculation of dielectric and optical parameters, which include the real and imaginary parts of the refractive and dielectric indices. In Raman spectroscopy, two obvious, wide and almost symmetrical peaks around 1355 cm-1 (D mode) and 1520–1550 cm-1 (G mode), clarify the formation of a-C:H thin film. Reflected spectra of thin films, in the spectral region of 400–4000 cm-1, have been recorded by the near normal FTIR reflection spectroscopy and show some peaks which can be assigned to the bending of sp3 C–C , sp3 or sp2 CH . The calculated data show that dielectric and optical parameters are almost independent of wavenumber.

Automated EBSP studies of deformation microstructures

1994 ◽  
Vol 52 ◽  
pp. 612-613
Author(s):  
D. J. Jensen
Keyword(s):  
Hough Transform ◽  
Crystallographic Orientation ◽  
Statistical Data ◽  
Texture Formation ◽  
Scattering Pattern ◽  
Back Scattering ◽  
Local Areas

Measurements of the crystallographic orientation within selected local areas of the microstructure is important to achieve further understanding of the development of deformation microstructures and texture; for example for studies of grain subdivision and texture formation. Different techniques may be applied. The most clear and precise results relating directly specific microstructural features to given orientations (or misorientations) are obtained by TEM methods. However, better statistical data may be obtained by the electron back scattering pattern (EBSP) technique in the SEM. The present paper concentrates on the EBSP technique and result obtained thereby.Characterization of the distribution of orientations in the deformation microstructures by EBSP generally requires measurements of hundreds or more orientations. Automatic techniques are therefore very adequate. By using a modified Hough transform routine, lines in an EBSP are easily and rapidly identified. Figure 1 shows an example of computer identified lines in an EBSP of aluminum. Based on this data the crystallographic orientation is calculated by standard routines.

Interface Characterization Using the Automated-EBSP Technique

1999 ◽  
Vol 586 ◽  
Author(s):  
John A. Sutliff
Keyword(s):  
High Accuracy ◽  
Materials Characterization ◽  
Polycrystalline Materials ◽  
Chemical Information ◽  
Scanning Electron Micrographs ◽  
Interface Characterization ◽  
Quantitative Image ◽  
Back Scattering ◽  
Experimental Challenge

ABSTRACTThe use of the electron back scattering pattern (EBSP) technique of electron diffraction (also referred to as EBSD and BKD) to study microstructure continues to gain popularity in the materials characterization community. The technique's ability to rapidly measure lattice orientation with good relative accuracy provides a statistically powerful tool for investigating the misorientation character of interfaces. It is certainly possible to gather basic misorientation data on thousands of interfaces in only a couple of hours. This invited talk will discuss the detection and characterization of interfaces in polycrystalline materials using the automated-EBSP technique with specific discussion of sub-grain and twin boundaries in deformed and/or annealed materials. This paper will also attempt to demonstrate with data from γγ' Ni-base superalloys that the process of acquiring, with high accuracy, all the spatial, orientation, and chemical information associated with boundaries during an extended data acquisition is a substantial experimental challenge. Combining quantitative image analysis of traditional high-resolution scanning electron micrographs with the EBSP data can help correct some of the distortions commonly encountered in EBSP data.

Single Source Precursors for the Growth of Metal-Chalcogenide Thin Films

1992 ◽  
Vol 282 ◽  
Author(s):  
Allen L. Seligson ◽  
Philip J. Bonasia ◽  
John Arnold ◽  
Kin-Man Yu ◽  
Jim M. Walker ◽  
...  
Keyword(s):  
Thin Films ◽  
The Novel ◽  
Single Source ◽  
X Ray Diffraction ◽  
Reaction Conditions ◽  
Rutherford Back Scattering ◽  
Single Source Precursors ◽  
Back Scattering ◽  
Related Compounds

ABSTRACTWe have recently reported the growth of ZnTe and CdTe thin films from the novel volatile single-source precursors Zn(sitel)2 and Cd(sitel)2 [sitel = TeSi(TeSi(siMe3)3]. In an effort to understand the role played by the bulky substituents, we have prepared a number of related compounds and have investigated their potential for the growth of II-VI materials. We now describe the synthesis and characterization of M[EX(SiMe3)3]2 (M = Zn, Cd, Hg for E = Te, X = C; M = Zn for E = Se, X = C, Si) and their use as precursors molecules for the growth of ZnSe, ZnTe, CdTe and HgTe. The thin films were characterized by Rutherford Back scattering spectrometry (RBS) and X-ray diffraction. Pyrolysis reaction conditions for the alkyl and silyl chalcogenolates are also compared.

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