Single Source Precursors for the Growth of Metal-Chalcogenide Thin Films

1992 ◽  
Vol 282 ◽  
Author(s):  
Allen L. Seligson ◽  
Philip J. Bonasia ◽  
John Arnold ◽  
Kin-Man Yu ◽  
Jim M. Walker ◽  
...  
Keyword(s):  
Thin Films ◽  
The Novel ◽  
Single Source ◽  
X Ray Diffraction ◽  
Reaction Conditions ◽  
Rutherford Back Scattering ◽  
Single Source Precursors ◽  
Back Scattering ◽  
Related Compounds

ABSTRACTWe have recently reported the growth of ZnTe and CdTe thin films from the novel volatile single-source precursors Zn(sitel)2 and Cd(sitel)2 [sitel = TeSi(TeSi(siMe3)3]. In an effort to understand the role played by the bulky substituents, we have prepared a number of related compounds and have investigated their potential for the growth of II-VI materials. We now describe the synthesis and characterization of M[EX(SiMe3)3]2 (M = Zn, Cd, Hg for E = Te, X = C; M = Zn for E = Se, X = C, Si) and their use as precursors molecules for the growth of ZnSe, ZnTe, CdTe and HgTe. The thin films were characterized by Rutherford Back scattering spectrometry (RBS) and X-ray diffraction. Pyrolysis reaction conditions for the alkyl and silyl chalcogenolates are also compared.

Preparation and Characterization of Zn-Se Bilayer Structure

2007 ◽  
Vol 31 ◽  
pp. 153-157
Author(s):  
M. Singh ◽  
J.S. Arora ◽  
Kamlendra Awasthi ◽  
R. Nathawat ◽  
Y.K. Vijay
Keyword(s):  
Grain Size ◽  
Annealing Temperature ◽  
Hexagonal Structure ◽  
Scattering Data ◽  
Bilayer Structure ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
Rutherford Back Scattering ◽  
Back Scattering

The Zn-Se bilayer structure prepared using thermal evaporation method at pressure 10-5 Torr. These films annealed in the vacuum for two hours on different constant temperatures. The optical band gap was found to be varying with annealing temperature due to removal of defects and increase in grain size. It was also observed by the X-ray diffraction pattern the grain size of the film increase with annealing temperature. The lattice constant of hexagonal structure of these films is found to be a =b=4.42Å and c=5.68Å. The dominant peaks to be at 23.2°,28° and 43.9° having values (100), (002) and (111) respectively. The Rutherford back scattering data of these films confirmed the mixing of elements with time.

scholarly journals Coordination polymers of benzenediseleninate, the seleno analog of terephthalate

2014 ◽  
Vol 70 (a1) ◽  
pp. C1235-C1235
Author(s):  
Robert Burrow ◽  
Giancarlo Belmonte
Keyword(s):  
Coordination Polymers ◽  
Water Molecules ◽  
Gravimetric Analysis ◽  
The Novel ◽  
X Ray Diffraction ◽  
Reaction Conditions ◽  
Subsequent Formation ◽  
Metal Centers ◽  
Infrared Spectral

The proligand para-benzenediseleninic acid, (HO2SeC6H4SeO2H) (Figure), is the seleno analog to the commonly used MOF spacer proligand, terephthalic acid. Novel coordination polymers based on this proligand, and Mn(II), Fe(II), Co(II), Ni(II), Cu(II) or Zn(II) metal centers containing auxiliary water molecules, [M(O2SeC6H4SeO2)2(H2O)n], were synthesized. Depending on the reaction conditions, different pure or mixed phases can be produced. Crystal to crystal transformations of the novel coordination polymers were studied with powder X ray diffraction, infrared spectral analysis and thermal gravimetric analysis. These coordination polymers can be dehydrated with subsequent formation of new anhydrous coordination polymer phases. Some of these phases can be rehydrated to lead back to the crystalline starting materials or to new crystalline hydrated phases. We are working on the complete structural characterization of the phases.

scholarly journals Characterization of GaSb thin films from tailor-made single-source precursors

2008 ◽  
Vol 310 (23) ◽  
pp. 4831-4834
Author(s):  
Andreas Seemayer ◽  
Alexander Hommes ◽  
Sascha Hümann ◽  
Stephan Schulz ◽  
Klaus Wandelt
Keyword(s):  
Thin Films ◽  
Single Source ◽  
Single Source Precursors

Synthesis and characterization of metal substituted AlxCr1−x(acetylacetonate)3 single-source precursors for their application to MOCVD of thin films

Polyhedron ◽  
2010 ◽  
Vol 29 (13) ◽  
pp. 2680-2688 ◽  
Author(s):  
Anshita Gairola ◽  
Girish V. Kunte ◽  
Deepak Chopra ◽  
T.N. Guru Row ◽  
A.M. Umarji ◽  
...  
Keyword(s):  
Thin Films ◽  
Synthesis And Characterization ◽  
Single Source ◽  
Single Source Precursors

Organometallic Chemical Vapor Deposition of Group-III Nitride Thin Films using Single Source Precursors

1997 ◽  
Vol 482 ◽  
Author(s):  
Roland A. Fischer ◽  
Wolfram Rogge
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Decomposition Temperature ◽  
The Novel ◽  
Single Source ◽  
Single Source Precursors ◽  
Group Iii ◽  
Group Iii Nitride

AbstractThe OMCVD of AlN, GaN and InN thin films using the novel single source precursors (N3)2Ga[(CH2)3NMe2] (1), (N3)In[(CH2)3NMe2]2 (2) and (N3)Al(CH2)3NMe2]2 (3) is reported. The compounds are non-pyrophoric. Compound 2 is air stable. No additional N-sources were used for the growth of the nitrides. We achieved epitaxial (AlN, GaN) or polycrystalline (InN) growth at least 200°C below the decomposition temperature of the respective nitride. Some aspects of the reactivity of the precursors with ammonia and the resulting influence on the deposition process were investigated.

scholarly journals Synthesis and Structural Characterization of (E)-4-[(2-Hydroxy-3-methoxybenzylidene)amino]butanoic Acid and Its Novel Cu(II) Complex

Molbank ◽  
10.3390/m1179 ◽  
2021 ◽  
Vol 2021 (1) ◽  
pp. M1179
Author(s):  
Eleftherios Halevas ◽  
Antonios Hatzidimitriou ◽  
Barbara Mavroidi ◽  
Marina Sagnou ◽  
Maria Pelecanou ◽  
...  
Keyword(s):  
Schiff Base ◽  
Gamma Aminobutyric Acid ◽  
X Ray Diffraction ◽  
Reaction Conditions ◽  
Polymeric Compound ◽  
Bridging Ligands ◽  
1H And 13C Nmr ◽  
One Dimensional ◽  
Ft Ir

A novel Cu(II) complex based on the Schiff base obtained by the condensation of ortho-vanillin with gamma-aminobutyric acid was synthesized. The compounds are physico-chemically characterized by elemental analysis, HR-ESI-MS, FT-IR, and UV-Vis. The complex and the Schiff base ligand are further structurally identified by single crystal X-ray diffraction and 1H and 13C-NMR, respectively. The results suggest that the Schiff base are synthesized in excellent yield under mild reaction conditions in the presence of glacial acetic acid and the crystal structure of its Cu(II) complex reflects an one-dimensional polymeric compound. The molecular structure of the complex consists of a Cu(II) ion bound to two singly deprotonated Schiff base bridging ligands that form a CuN2O4 chelation environment, and a coordination sphere with a disordered octahedral geometry.

Physical Properties Of Single-Phase Skutterudite Thin-Films (CoSb3 and IrSb3)

1998 ◽  
Vol 545 ◽  
Author(s):  
J. C. Caylor ◽  
A. M. Stacy ◽  
T. Sands ◽  
R. Gronsky
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Growth Parameters ◽  
X Ray Diffraction ◽  
Adhesion Properties ◽  
Rutherford Back Scattering ◽  
Phonon Component ◽  
Transmission Electron ◽  
Structure Morphology ◽  
High Vapor

AbstractBulk skutterudite phases based on the CoAs3 structure have yielded compositions with a high thermoelectric figure-of-merit (“ZT”) through the use of doping and substitutional alloying. It is postulated that further enhancements in ZT may be attained in artificially structured skutterudites by engineering the microstructure to enhance carrier mobility while suppressing the phonon component of the thermal conductivity. In this work the growth and properties of singlephase CoSb3 and IrSb3 skutterudite thin films are reported. The films are synthesized by pulsed laser deposition (PLD) where the crystallinity can be controlled by the deposition temperature. Powder X-ray diffraction (PXRD), Transmission electron microscopy (TEM) and Rutherford- Back Scattering (RBS) were used to probe phase, structure, morphology and stoichiometry of the films as functions of growth parameters and substrate type. A substrate temperature of 250°C was found to be optimal for the deposition of the skutterudites from stoichiometric targets. Above this temperature the film is depleted of antimony due to its high vapor pressure eventually reaching a composition where the skutterudite structure is no longer stable. However, when films are grown from antimony-rich targets the substrate temperature can be increased to at least 350°C while maintaining the skutterudite phase. In addition, adhesion properties of the films are explored in terms of the growth mode and substrate interaction. Finally, preliminary room temperature electrical and thermal measurements are reported.

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