Detection and Characterization of an Electrical Failure Induced during Laser Ablation of Packages

2008 ◽  
Author(s):  
P. Schwindenhammer ◽  
H. Murray ◽  
P. Descamps ◽  
P. Poirier
Keyword(s):  
Laser Ablation ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Ablation Process ◽  
Thermally Induced ◽  
Electrical Failure ◽  
Electrical Phenomenon ◽  
Semiconductor Packages ◽  
Complex Semiconductor

Abstract Decapsulation of complex semiconductor packages for failure analysis is enhanced by laser ablation. If lasers are potentially dangerous for Integrated Circuits (IC) surface they also generate a thermal elevation of the package during the ablation process. During measurement of this temperature it was observed another and unexpected electrical phenomenon in the IC induced by laser. It is demonstrated that this new phenomenon is not thermally induced and occurs under certain ablation conditions.

Scanning Capacitance Microscopy for Failure Analysis of SOI-Based Advanced Microprocessors

2010 ◽  
Author(s):  
Lim Soon Huat ◽  
Lwin Hnin-Ei ◽  
Vinod Narang ◽  
J.M. Chin
Keyword(s):  
Failure Analysis ◽  
Electrical Characterization ◽  
Silicon On Insulator ◽  
Large Area ◽  
Scanning Capacitance Microscopy ◽  
Electrical Failure ◽  
Silicon Transistors ◽  
Soi Substrates ◽  
Electrical Data

Abstract Scanning capacitance microscopy (SCM) has been used in electrical failure analysis (EFA) to isolate failing silicon transistors on silicon-on-insulator (SOI) substrates. With the shrinking device geometry and increasing layout complexity, the defects in transistors are often non-visual and require detailed electrical analysis to pinpoint the defect signature. This paper demonstrates the use of SCM technique for EFA on SOI device substrates, as well as using this technique to isolate defective contacts in a relatively large-area scan of 25µm x 25µm. We also performed dC/dV electrical characterization of defective transistors, and correlated the data from SCM technique and electrical data from nano-probing to locate failing transistors.

Electrical Failure Analysis and Characterization of Leakage Paths Leading to Single Cell Failures in 128Mbit SDRAMs

2003 ◽  
Author(s):  
M. Versen ◽  
A. Schramm
Keyword(s):  
Failure Analysis ◽  
Single Cell ◽  
Case Studies ◽  
Leakage Current ◽  
Random Access ◽  
Electrical Failure ◽  
Leakage Path ◽  
Short Summary ◽  
Order Of Magnitude

Abstract A common failure signature in dynamic random access memories (DRAMs) is the single cell failure. The charge is lost and thereby the information stored in trench capacitors can be destroyed by high resistive leakage paths. The nature of the leakage path determines the properties of the failure such as temperature-, voltage- and timing-dependencies and its stability. In this study, high resistive leakage paths were investigated and delimited from classical shorts by estimating the order of magnitude of the leakage current and by comparison to a simple resistive leakage path. Such an investigation is the basis for a defect-based test approach that leads to multiparameter tests [1]. An introduction to the problem is given in the first section, while the second section deals with the characterization of the defects in two case studies. A short summary is given in the end.

Optical emission and mass spectrometric characterization of laser ablation process of Ca, Mg, and Ba at 1064nm

2007 ◽  
Vol 102 (1) ◽  
pp. 013110 ◽  
Author(s):  
Iván Cabanillas-Vidosa ◽  
Carlos A. Rinaldi ◽  
Juan C. Ferrero
Keyword(s):  
Laser Ablation ◽  
Optical Emission ◽  
Mass Spectrometric ◽  
Ablation Process ◽  
Laser Ablation Process

Optical emission and energy disposal characterization of the laser ablation process of CaF2, BaF2, and NaCl at 1064 nm

2008 ◽  
Vol 104 (10) ◽  
pp. 103112 ◽  
Author(s):  
M. Villagran-Muñiz ◽  
H. Sobral ◽  
C. A. Rinaldi ◽  
I. Cabanillas-Vidosa ◽  
J. C. Ferrero
Keyword(s):  
Laser Ablation ◽  
Optical Emission ◽  
Ablation Process ◽  
Laser Ablation Process

Decapsulation of Copper Bonded Plastic Encapsulated Integrated Circuits Utilizing Laser Ablation and Mixed Acid Chemistry

2010 ◽  
Author(s):  
Jake E. Klein ◽  
Lucas Copeland
Keyword(s):  
Laser Ablation ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Packaging Material ◽  
Device Characterization ◽  
Mixed Acid ◽  
Root Cause ◽  
Analysis Methodology ◽  
Bond Wires ◽  
Root Cause Failure Analysis

Abstract By utilizing a NdYAG lamp pumped marking laser, along with unique mixes of specific acids, reproducible decapsulation of copper bonded devices without damage to the bond wires, packaging material, or to the silicon die circuitry itself can be achieved. With the copper bond wires, die, or substrate exposed, typical failure analysis methodology can then be applied to drive root cause failure analysis or device characterization.

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