Novel Gox Inspection Methodology in Advanced Silicon Process

2011 ◽  
Author(s):  
Kuo Yu Wang ◽  
Kuo Hsiung Chen ◽  
Jian Chang Lin ◽  
W. S. Wu
Keyword(s):  
Atomic Force Microscopy ◽  
Leakage Current ◽  
Gate Oxide ◽  
New Method ◽  
Electrical Behavior ◽  
Inspection Method ◽  
Force Microscopy ◽  
Atomic Force

Abstract This paper describes a new gate oxide (Gox) inspection method that uses nanoprobing and capacitive-atomic force microscopy (C-AFM) along with optimized etch chemistries and polishing techniques. It presents several examples showing how the new method outperforms conventional Gox inspection approaches in its ability to locate defects such as oxide pin holes and impurities that cause leakage current. It also discusses the electrical behavior of pin holes and soft defects.

Local Leakage Current of HfO2Thin Films Characterized by Conducting Atomic Force Microscopy

2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 1949-1953 ◽  
Author(s):  
Hiroya Ikeda ◽  
Tomokazu Goto ◽  
Mitsuo Sakashita ◽  
Akira Sakai ◽  
Shigeaki Zaima ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Leakage Current ◽  
Force Microscopy ◽  
Atomic Force

AFM Interaction Forces of Lubricity Materials Surface

2012 ◽  
Vol 528 ◽  
pp. 95-98
Author(s):  
Xue Feng Li ◽  
Chu Wu ◽  
Shao Xian Peng ◽  
Jian Li
Keyword(s):  
Atomic Force Microscopy ◽  
Friction Force ◽  
Sliding Friction ◽  
Static Friction ◽  
Adhesive Force ◽  
New Method ◽  
Interaction Forces ◽  
Scanning Angle ◽  
Force Microscopy ◽  
Atomic Force

Micro interaction forces of lubricity surface of silicon and mica were studied using atomic force microscopy (AFM). From different scanning angle and bisection distance of the AFM, a new method of measuring micro static friction of lubricity surface materials was investigated. Results show that the micro coefficients of static and sliding friction of mica are less than the silicon, but the adhesive force is bigger. The mechanism of friction force of the two lubricity materials was discussed.

Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy

2018 ◽  
Vol 123 (16) ◽  
pp. 161417 ◽  
Author(s):  
T. Hamachi ◽  
S. Takeuchi ◽  
T. Tohei ◽  
M. Imanishi ◽  
M. Imade ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Single Crystals ◽  
Leakage Current ◽  
Current Analysis ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Bulk Single Crystals

scholarly journals A New Method for Obtaining Model-Free Viscoelastic Material Properties from Atomic Force Microscopy Experiments Using Discrete Integral Transform Techniques

2021 ◽  
Author(s):  
Berkin Uluutku ◽  
Enrique A López-Guerra ◽  
Santiago D Solares
Keyword(s):  
Atomic Force Microscopy ◽  
Integral Transform ◽  
Material Behavior ◽  
New Method ◽  
General Strategy ◽  
Force Microscopy ◽  
Viscoelastic Models ◽  
Model Free ◽  
Atomic Force ◽  
Z Domain

Viscoelastic characterization of materials at the micro- and nanoscales is commonly performed with the aid of force-distance relationships acquired using atomic force microscopy (AFM). The general strategy for existing methods is to fit the observed material behavior to specific viscoelastic models, such as generalized viscoelastic models or power-law rheology models, among others.  Here we propose a new method to invert and obtain the viscoelastic properties of a material through the use of the Z-transform, without using a model.  We present the rheological viscoelastic relations in their classical derivation and their Z-domain correspondence.  We illustrate the proposed technique on a model experiment involving a traditional ramp-shaped force-distance AFM curve, demonstrating good agreement between the viscoelastic characteristics extracted from the simulated experiment and the theoretical expectations. We also provide a path for calculating standard viscoelastic responses from the extracted material characteristics.  The new technique based on the Z-transform is complementary to previous model-based viscoelastic analyses and can be advantageous with respect to Fourier techniques due to its generality.  Additionally, it can handle the unbounded inputs traditionally used to acquire force-distance relationships in AFM, such as “ramp” functions, in which the cantilever position is displaced linearly with time for a finite period of time.

scholarly journals A new method to deal with biomacromolecularimage observed by atomic force microscopy

2011 ◽  
Vol 60 (9) ◽  
pp. 098703
Author(s):  
Ji Chao ◽  
Zhang Ling-Yun ◽  
Dou Shuo-Xing ◽  
Wang Peng-Ye
Keyword(s):  
Atomic Force Microscopy ◽  
New Method ◽  
Force Microscopy ◽  
Atomic Force

A Novel Electrical Test by C-AFM to Differentiate Gate-to-S/D Gate Oxide Short From Non-Gate Oxide Short Defect in Real Products

2004 ◽  
Author(s):  
Cheng-Piao Lin ◽  
Cheng-Hsu Wu ◽  
Cheng-Chun Ting
Keyword(s):  
Atomic Force Microscopy ◽  
Short Path ◽  
Gate Oxide ◽  
Electrical Test ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gate Oxide Short ◽  
Voltage Contrast

Abstract A method to differentiate Gate-to-S/D Gate Oxide Short from non-Gate Oxide Short defect in real products by analyzing the I-V curves acquired by Conducting-Atomic Force Microscopy (C-AFM) is presented. The method allows not only the correct short path to be identified, but also allows differentiation of gate-to-S/D GOS from non-GOS problems, which cannot be reached by passive voltage contrast (PVC) only.

A new method of biosensing with 1μl of Escherichia coli suspension using atomic force microscopy

2005 ◽  
Vol 345 (1) ◽  
pp. 116-121 ◽  
Author(s):  
Satoshi Tanaka ◽  
Hiroaki Sugasawa ◽  
Takashi Morii ◽  
Takao Okada ◽  
Masanori Abe ◽  
...  
Keyword(s):  
Escherichia Coli ◽  
Atomic Force Microscopy ◽  
New Method ◽  
Force Microscopy ◽  
Atomic Force

4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal

2006 ◽  
Vol 527-529 ◽  
pp. 1265-1268 ◽  
Author(s):  
Jeffery B. Fedison ◽  
Chris S. Cowen ◽  
Jerome L. Garrett ◽  
E.T. Downey ◽  
James W. Kretchmer ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Temperature ◽  
Room Temperature ◽  
Gate Oxide ◽  
Surface Roughening ◽  
Force Microscopy ◽  
Atomic Force ◽  
N Source ◽  
High Temperature Anneal ◽  
Blocking Voltage

Results of a 1200V 4H-SiC vertical DMOSFET based on ion implanted n+ source and pwell regions are reported. The implanted regions are activated by way of a high temperature anneal (1675°C for 30 min) during which the SiC surface is protected by a layer of graphite. Atomic force microscopy shows the graphite to effectively prevent surface roughening that otherwise occurs when no capping layer is used. MOSFETs are demonstrated using the graphite capped anneal process with a gate oxide grown in N2O and show specific on-resistance of 64 mW×cm2, blocking voltage of up to 1600V and leakage current of 0.5–3 ´10-6 A/cm2 at 1200V. The effective nchannel mobility was found to be 1.5 cm2/V×s at room temperature and increases as temperature increases (2.8 cm2/V×s at 200°C).

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