Investigation of Protection Layer Materials for Ex-Situ Lift-Out TEM Sample Preparation with FIB for 14 nm FinFET

2014 ◽  
Author(s):  
H. Feng ◽  
G.R. Low ◽  
P.K. Tan ◽  
Y.Z. Zhao ◽  
H.H. Yap ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Sample Preparation ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Sample Thickness ◽  
Ex Situ ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Protection Layer ◽  
Effect Transistor

Abstract With continuous scaling of CMOS device dimensions, sample preparation for Transmission Electron Microscope (TEM) analysis becomes increasingly important and challenging as the required sample thickness is less than several tens of nanometers. This paper studies the protection materials for FIB milling to increase the success rate of ex-situ ‘lift-out’ TEM sample preparation on 14nm Fin-Field Effect Transistor (FinFET).

Strontium Bismuth Tantalate Based Ferroelectric Gate Field Effect Transistor with Yttrium Oxide as the Buffer Layer

1997 ◽  
Vol 493 ◽  
Author(s):  
Myoung-Ho Lim ◽  
T. S. Kalkur ◽  
Yong-Tae Kim
Keyword(s):  
Buffer Layer ◽  
Yttrium Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Rate Of Change ◽  
Memory Window ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Capacitance Voltage ◽  
Effect Transistor

ABSTRACTWe report the first demonstration of an enhancement mode n-channel metal -ferroelectric-semiconductor field effect transistor (MFISFET) realized directly on silicon with yttrium oxide as the buffer layer. The capacitance-voltage (C-V) characteristics of Metal Ferroelectric Insulator Silicon (MFIS) structures show hysteresis and the direction of hysteresis corresponds to ferroelectric polarization. The memory window in the C-V characteristics was 2V for an applied voltage of ± 10V. The memory window did not show significant change due to decrease in rate of change of sweep voltage and temperature. The transmission electron microscopy (TEM) analysis confirms the formation of an amorphous oxide layer between silicon and yttrium oxide buffer layer.

pH sensor based on Au NPs/ ITO membrane as extended gate field-effect transistor

2021 ◽  
Author(s):  
Saleh K. Alsaee ◽  
Naser Mahmoud Ahmed ◽  
Elham Mzwd ◽  
Ahmad Fairuz Omar ◽  
A.I. Aljameel ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscope ◽  
Indium Tin Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Spectroscopic Techniques ◽  
Au Nps ◽  
X Ray ◽  
Vis Spectroscopy ◽  
Effect Transistor

Abstract In the present work, gold nanoparticles (Au NPs) were synthesized on indium tin oxide (ITO) thin film on glass substrate for the pH sensing application based on extended gate field effect transistor (EGFET). The ITO thin film was deposited on glass using RF sputtering and then the Au NPs were synthesized on it by pulsed laser ablation in liquid (PLAL) technique. The Au NPs were characterized using transmission electron microscope (TEM), field emission scanning electron microscope (FE-SEM), energy dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), and UV-Vis spectroscopic techniques. From the TEM analysis, the size of the spherical shaped Au NPs was found to be in the range of 5–22 nm. The UV-Vis spectroscopy analysis revealed absorption peak at 518 nm, indicating purplish red color. The XPS data revealed Au 4f doublet binding energy peaks of the photoelectrons at 83.79 and 87.45 eV. The current-voltage (I-V) curves indicated pH sensitivities values of 43.6 mV/pH and 0.6 \({\left(\mu A\right)}^{\frac{1}{2}} /pH\) with linear regression of 0.9. The hysteresis and drift characteristics of Au NPs/ITO/G membrane were also studied to investigate its stability and reliability. The results of this work demonstrated that the Au NPs/ITO/G membrane is quite useful for the acidity and basicity detection.

scholarly journals Ex-Situ "Auto Lift" Technique for TEM Sample Preparation

2005 ◽  
Vol 13 (6) ◽  
pp. 40-41
Author(s):  
Keyword(s):  
Electron Microscope ◽  
Sample Preparation ◽  
Focused Ion Beam ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Ex Situ ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Dual Column ◽  
Microprocessor Industry

"The most advantageous feature of the ex-situ lift out method is throughput."A great deal of emphasis is placed on "throughput" in the microprocessor industry. Wafer sizes are getting larger and the costs of building them have increased astronomically. The transmission electron microscope (TEM) has become the essential tool for examining current microprocessor products. The TEM can only be effective if it has properly prepared specimens to put into it. In order to achieve the highest specimen preparation spatial resolution, the microprocessor industry has turned to focused ion beam (FIB) tools, either single or dual column, for TEM specimen preparation in applications ranging from process control to failure analysis, and on to semiconductor device metrology.

Effects of annealing on the structure and electrical conductivity of CVD alumina films

1988 ◽  
Vol 3 (5) ◽  
pp. 1002-1009 ◽  
Author(s):  
A. S. Wong ◽  
G. M. Michal ◽  
I. E. Locci ◽  
P. W. Cheung
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Dielectric Behavior ◽  
Silicon Single Crystal ◽  
Ph Measurements ◽  
Alumina Films ◽  
Transmission Electron ◽  
Current Voltage ◽  
Effect Transistor ◽  
Complete Transformation

Alumina films, 160 nm thick, were deposited on (100) -oriented silicon single-crystal substrates by pyrohydrolysis of aluminum chloride. Such films are candidate gate materials for an improved pH ion-sensitive field-effect transistor (pH-ISFET) for industrial and medical pH measurements. The current-voltage (I–V) characteristics of films annealed for 30 min at temperatures of 850, 1000, and 1175 °C were determined, Annealing at 850 °C produced the optimum I–V behavior for the aluminum oxide pH-sensitive films as evidenced by minimum leakage current and maximum breakdown voltage. The structures of the annealed films were examined using transmission electron microscopy. The anneals at 1000 and 1175 °C caused partial and complete transformation, respectively, of the as-deposited α-alumina to the α-alumina phase. Associated with a-alumina formation was the creation of voids along the grain boundaries and in the grain interiors that provided paths of increased electrical conduction through the alumina films and degraded their dielectric behavior.

Silicon Field Emitter Arrays Integrated with MOSFET Devices

2001 ◽  
Vol 685 ◽  
Author(s):  
Ching-yin Hong ◽  
Akintunde I. Akinwande
Keyword(s):  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Tem Analysis ◽  
Field Emitter Arrays ◽  
Transmission Electron ◽  
Effect Transistor ◽  
Tip Radius ◽  
Electrical Data

AbstractWe report a metal oxide semiconductor field effect transistor (MOSFET) controlled field emission array (FEA) device. The device uses a lateral double diffused MOSFET (LD-MOSFET) to control electron supply to the surface. The FEAs were fabricated using isotropic etch of silicon, oxidation sharpening and chemical mechanical polishing. The LD-MOSFETs have a threshold voltage of 0.48V while the FEAs have a turn-on voltage of 28V. Analysis using the FN formulation indicates that a silicon tip radius of 11 nm would fit the FEA IV data. The tip radius from the electrical data is very close to the average tip radius of 10 nm obtained from transmission electron microscope (TEM) analysis. The IV characterization of the MOSFET/FEA demonstrated control of electron emission by the MOSFET gate voltage.

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