Selective Etching of Heavily-Boron-Doped Si Substrate Using Lightly-Boron-Doped Si Epi as an Etch Stop Layer
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Abstract A sample preparation technique for flip chips (FC) deprocessing from the back side proposed. The technique uses HNA chemistry (consisting of a mixture of acids: hydrofluoric, nitric and acetic) to wet-etch the heavily-boron-doped Si bulk substrate selectively to the lightly-boron-doped Si epi. The procedure can be used as a FC device sample preparation technique for back-side optical probing and FIB editing.
1984 ◽
Vol 42
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pp. 272-273
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1990 ◽
Vol 8
(2)
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pp. 165
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2002 ◽
Vol 954
(1-2)
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pp. 41-49
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