scholarly journals P-N Junction Analysis using Electron Beam Induced Current (EBIC) Technique

2021 ◽  
Author(s):  
Lori L. Sarnecki ◽  
Regina Kuan
Keyword(s):  
Electron Beam ◽  
Cross Section ◽  
Integrated Circuit ◽  
Resolution Enhancement ◽  
Three Dimensional ◽  
Potential Method ◽  
Fault Isolation ◽  
Induced Current ◽  
Cross Sectional ◽  
Electron Beam Induced Current

Abstract The integrity of a P-type or N-type epitaxial layer, implanted wells, or dopants (i.e. P-epi, N-well, P-imp, N-imp, etc.) oftentimes can affect the performance of an integrated circuit (IC), especially in analog/mixed signal devices. At onsemi, we had encountered a poor P-N junction of a Zener diode that caused a Cross-Coupled-Switched-Cap voltage doubler to have a lower output voltage which eventually affected the performance of the IC. The integrity of any P-N junction can be electrically verified through curve tracing with in-SEM nano-probing and fault isolation (PEM, OBIRCH, etc.) techniques. However, physical defect revelation using junction stain, either top-down or in cross section, can be challenging due to the three-dimensional (3D) form of any P-N junction. With Electron Beam Induced Current (EBIC), we can easily identify an abnormal P-N junction through both topdown and cross section. This paper is to characterize EBIC analysis on IC cross sectional view in mapping the P-N junctions and provide the information of its doping profiles. In this paper, limitation of both chemical etching and EBIC will be discussed as well as introducing the use of ion mill after FIB cross section during cross sectional EBIC sample prep as a potential method for resolution enhancement. These findings add to the understanding in using this technique and further improvement to its application in failure analysis.

Three-dimensional investigations of electrical barriers using electron beam induced current measurements

2002 ◽  
Vol 91 (5) ◽  
pp. 2713-2724 ◽  
Author(s):  
Mikhail Gaevski ◽  
Mattias Elfwing ◽  
Eva Olsson ◽  
Anders Kvist
Keyword(s):  
Electron Beam ◽  
Three Dimensional ◽  
Induced Current ◽  
Electron Beam Induced Current

Combined Electron Beam Induced Current Imaging (EBIC) and Focused Ion Beam (FIB) Techniques for Thin Film Solar Cell Characterization

2010 ◽  
Author(s):  
Frank Altmann ◽  
Jan Schischka ◽  
Vinh Van Ngo ◽  
Stacey Stone ◽  
Laurens F. Tz. Kwakman ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Focused Ion Beam ◽  
Surface Defects ◽  
Ion Beam ◽  
Three Dimensional ◽  
Region Of Interest ◽  
Induced Current ◽  
Large Area ◽  
Electron Beam Induced Current

Abstract A novel analytical method applying combined electron beam induced current (EBIC) imaging based on scanning electron microscopy (SEM) and focused ion beam (FIB) cross sectioning in a SEM/FIB dualbeam system is presented. The method is demonstrated in several case studies for process characterization and failure analysis of thin film technology based Solar cells, including Silicon (CSG), Cadmium Telluride (CdTe) and Copper Indium Selenide (CIS) absorbers. While existing techniques such as electro-, photoluminescence spectroscopy and lock-in thermography are able to locate the larger, electrically active defects reasonably fast on a large area, the FIB-SEM EBIC system is uniquely capable of detecting sub-micron, sub-surface defects and of analysing these defects in the same system. In combination with a FIB, the localized region of interest can be easily cross sectioned and additional EBIC analysis can be applied for a three dimensional analysis of the p/n junction.

Fault Isolation of Sub-Surface Leakage Defects Using Electron Beam Induced Current Characterization in Next-Generation Flash Memory Technology Development

2010 ◽  
Author(s):  
Go Nagatani ◽  
Kenneth Yu ◽  
Amalia Del Rosario ◽  
Max Sidorov ◽  
Richard E. Stallcup ◽  
...  
Keyword(s):  
Electron Beam ◽  
Flash Memory ◽  
Technology Development ◽  
Physical Structure ◽  
Fault Isolation ◽  
Induced Current ◽  
Structure Modification ◽  
Electron Beam Induced Current ◽  
Emission Microscopy ◽  
Surface Leakage

Abstract This paper covers methods used to isolate single leaky junctions in a test structure designed for Flash memory technology development. It may be possible to isolate this failure through micro probing or a combination of electrical testing and physical structure modification by FIB, but at the expense of spending numerous days. The paper shows that a combination of emission microscopy (EMMI), electron beam induced current (EBIC) characterization and a SEM nano-probing can drastically simplify the fault isolation process. Results of nano-probing are also shown to prove the level of leakage detected in the faulty junction. A combination of EMMI and EBIC characterization was able to pinpoint the problematic junction from approximately 2500 junctions in the structure. Furthermore, the nano-probing IV characterization proved the identified junction to be indeed high in leakage current, providing further confidence for physical failure analysis.

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