scholarly journals Low temperature gas-phase technology cladding powdered silicon carbide

2020 ◽  
Vol 98 (2) ◽  
pp. 76-82
Author(s):  
P.A. Abdurazova ◽  
◽  
M.S. Sataev ◽  
Sh.T. Koshkarbaeva ◽  
K.A. Amanbaeva ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Gas Phase ◽  
Powdered Silicon

Perchlorosilanes and Perchlorocarbosilanes as Precursors to Silicon Carbide

2006 ◽  
Vol 911 ◽  
Author(s):  
Vladimir Sevastyanov ◽  
Yurij Ezhov ◽  
Roman Pavelko ◽  
Nikolaj Kuznetsov
Keyword(s):  
Thermal Decomposition ◽  
Silicon Carbide ◽  
Low Temperature ◽  
Gas Phase ◽  
Thermodynamic Modeling ◽  
Reaction System ◽  
Reaction Products ◽  
Gaseous Species ◽  
Phase Synthesis ◽  
Key Features

AbstractHomologues with the general stoichiometry a(SiCl4) : bSi : cC : d(SiC) are shown to be potential precursors for the low-temperature gas-phase synthesis of silicon carbide. Thermal decomposition of these precursors yields the chemically stable gaseous species SiCl4 and condensed Si, C, SiC, SiC+Si, or SiC+C. Thermodynamic modeling of the thermal decomposition of octachlorotrisilane, Si3Cl8, is used to analyze the key features of the thermolysis of perchlorosilanes with the general stoichiometry a(SiCl4) : bSi. The equilibrium compositions of reaction products in the Si3Cl8+CO system are determined. This reaction system enables low-temperature (400 – 1200 K) synthesis of silicon carbide.

Aqueous Benzene Oxidation in Low-Temperature Plasma of Pulsed Corona Discharge

2016 ◽  
Vol 19 (2) ◽  
Author(s):  
Iakov Kornev ◽  
Sergei Preis
Keyword(s):  
Low Temperature ◽  
Corona Discharge ◽  
Gas Phase ◽  
Pulse Repetition Frequency ◽  
Repetition Frequency ◽  
Pulse Repetition ◽  
Benzene Oxidation ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Pulsed Corona

AbstractWastewaters polluted with non-biodegradable volatile organic compounds (VOCs), such as aromatic substances, present a growing problem meeting no adequately affordable technological response. Low-temperature plasma generated in the gas-phase pulsed corona discharge (PCD) presents competitive advanced oxidation technology in abatement of various classes of pollutants, although the process parameters, the pulse repetition frequency and the liquid spray rate, require optimization. The experimental research into aqueous benzene oxidation with PCD was undertaken to establish the impact of the parameters to the energy efficiency. The oxidation reaction was found under the experimental conditions to mostly proceed in the gas phase showing little influence of the pulse repetition frequency and the gas-liquid contact surface. Oxidation of benzene and, presumably, other volatile pollutants in the volume of PCD reactor compartment presents an effective strategy of aqueous VOCs abatement.

In Situ Optical Analysis of the Gas Phase during the Deposition of Silicon Carbide from Methyltrichlorosilane

1996 ◽  
Vol 143 (5) ◽  
pp. 1654-1661 ◽  
Author(s):  
M. Ganz ◽  
N. Dorval ◽  
M. Lefebvre ◽  
M. Péalat ◽  
F. Loumagne ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Optical Analysis

Theoretical Study of Gas-Phase Thermodynamics Relevant to Silicon Carbide Chemical Vapor Deiposition

1991 ◽  
Vol 250 ◽  
Author(s):  
Mark D. Allendorf ◽  
Carl F. Melius
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Theoretical Study ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Equilibrium Calculations

AbstractEquilibrium calculations are reported for conditions typical of silicon carbide (SiC) deposition from mixtures of silane and hydrocarbons. Included are 34 molecules containing both silicon and carbon, allowing an assessment to be made of the importance of organosilicon species (and organosilicon radicals in particular) to the deposition process. The results are used to suggest strategies for improved operation of SiC CVD processes.

Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for the Technology of Power Electronics

2021 ◽  
Author(s):  
A. V. Afanasev ◽  
V. A. Ilyin ◽  
V. V. Luchinin ◽  
S. A. Reshanov
Keyword(s):  
Silicon Carbide ◽  
Power Electronics ◽  
Gas Phase ◽  
Basic Process
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