scholarly journals Principles of synergetics in training of specialists physical and technical profile

2020 ◽  
Vol 98 (2) ◽  
pp. 136-142
Author(s):  
L.V. Chirkova ◽  
◽  
K.T. Yermaganbetov ◽  
L. Tezekbaeva ◽  
Keyword(s):  
Nonequilibrium Thermodynamic ◽  
Electrical Energy ◽  
External Source ◽  
Thermodynamic System ◽  
Bipolar Transistors ◽  
Charge Carriers ◽  
Base Layer ◽  
State University ◽  
Collector Junction ◽  
Emitter Region

The article discusses the use of the basic principles of synergetics in the training of physicists in the study of the discipline «Physical Electronics». The work is based on many years of experience in teaching the discipline at the Department of Radiophysics and Electronics of Karaganda State University named after E.A. Buketova. It is shown that the system «semiconductor structure + external source of electrical energy» can be considered as an open nonequilibrium thermodynamic system in which cooperative processes of spontaneous self-organization due to the constant exchange of energy and matter develop. The physical processes in bipolar transistors in the active mode of operation are analyzed. By means of a qualitative theoreti- cal analysis, it was established that the system under consideration interacts with self-organizing processes that result in spontaneous lowering of the potential barrier in the emitter region and an increase in similar barter in the region of collector junctions; spontaneous injection of minority charge carriers into the base is observed, resulting in a spontaneous increase in the concentration of minority charge carriers in the base layer adjacent to the transition. Spontaneous transfer of charge carriers through the base to the collector causes a spontaneous decrease in the collector junction resistance to the resistance of a forward-biased emitter junction, etc. All of the above processes determine the spontaneous redistribution of the voltage of the power source, as a result of which the power at the output of the transistor begins to exceed the power at its input, i.e. A bipolar transistor will amplify the power.

Prevention of InP/InGaAs/InP Double Heterojunction Bipolar Transistors from Current Gain Reduction during Passivation

2004 ◽  
Vol 833 ◽  
Author(s):  
Byoung-Gue Min ◽  
Jong-Min Lee ◽  
Seong-Il Kim ◽  
Chul-Won Ju ◽  
Kyung-Ho Lee
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Oxide ◽  
Surface Recombination ◽  
Surface States ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Current Gain ◽  
Device Structure ◽  
Double Heterojunction ◽  
Gain Reduction

ABSTRACTA significant degradation of current gain of InP/InGaAs/InP double heterojunction bipolar transistors was observed after passivation. The amount of degradation depended on the degree of surface exposure of the p-type InGaAs base layer according to the epi-structure and device structure. The deposition conditions such as deposition temperature, kinds of materials (silicon oxide, silicon nitride and aluminum oxide) and film thickness were not major variables to affect the device performance. The gain reduction was prevented by the BOE treatment before the passivation. A possible explanation of this behavior is that unstable non-stoichiometric surface states produced by excess In, Ga, or As after mesa etching are eliminated by BOE treatment and reduce the surface recombination sites.

scholarly journals Developing electrical energy saving in State University of Malang

2019 ◽  
Vol 245 ◽  
pp. 012043
Author(s):  
S Sendari ◽  
H Elmunsyah ◽  
Muladi ◽  
A N Afandi
Keyword(s):  
Energy Saving ◽  
Electrical Energy ◽  
State University

Tri-Layer Lift-off Metallization Process Using Low Temperature Deposited SiNx

1992 ◽  
Vol 282 ◽  
Author(s):  
J. R. Lothian ◽  
F. Ren ◽  
S. J. Pearton ◽  
U. K. Chakrabarti ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
Electron Cyclotron Resonance ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Lithographic Patterning ◽  
Final Stress ◽  
Lift Off ◽  
High Yields ◽  
Metallization Process

ABSTRACTA tri-level resist scheme using low temperature (<50°C) deposited SiNx ratfier than Ge for the transfer layer has been developed. This allows use of an optical stepper for lithographic patterning of the emitter-base junctions in GaAs/AlGaAs heterojunction bipolar transistors (HBTs) where a conventional lift-off process using a single level resist often leads to die presence of shorts between metallizations. The plasma-enhanced chemically vapor deposited (PECVD) SiNx shows a sligtly larger degree of Si-H bonding compared to nitride deposited at higher temperature (275°C), and is under compressive stress (-5 × 1010 dyne · cm−2) which is considerably relieved upor thermal cycling to 500°C (-1.5 × 1010 dyne · cm−2 after cool-down). This final stress is approximately a factor of two higher man conventional PECVD SiNx cycled in the same manner. The adhesion of the low temperature nitride to die underlying polydimediylglutarimide (PMGI) base layer in the tri-level resist is excellent, leading to high yields in the lift-off metallization process. These layers are etched in Electron Cyclotron Resonance (ECR) discharges of SF6 or O2, respectively, using low additional dc bias (≤-100V) on the sample. Subsequent deposition of the HBT base metallization (Ti/Ag/Au) and lift-off of the tri-level resist produces contacts with excellent edge definition and an absence of shorts between metallization.

Emitter region delay time of AlGaAs/GaAs heterojunction bipolar transistors

1990 ◽  
Vol 33 (3) ◽  
pp. 389-390 ◽  
Author(s):  
Guang-Bo Gao ◽  
J.-I. Chyi ◽  
J. Chen ◽  
H. Morkoç
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Delay Time ◽  
Bipolar Transistors ◽  
Emitter Region

High-Power Characteristics of GaN/InGaN Double Heterojunction Bipolar Transistors with a Regrown p-InGaN Base Layer

2003 ◽  
Vol 798 ◽  
Author(s):  
Toshiki Makimoto ◽  
Yoshiharu Yamauchi ◽  
Kazuhide Kumakura
Keyword(s):  
High Power ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Collector Current ◽  
Power Characteristics ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Double Heterojunction ◽  
Extrinsic Base

ABSTRACTWe have investigated high-power characteristics of GaN/InGaN double heterojunction bipolar transistors on SiC substrates grown by metalorganic vapor phase epitaxy. The p-InGaN extrinsic base layers were regrown to improve ohmic characteristics of the base. Base-collector diodes showed low leakage current at their reverse bias voltages due to a wide bandgap of a GaN collector, resulting in a high-voltage transistor operation. A 90 μm × 50 μm device operated up to a collector-emitter voltage of 28 V and a collector current of 0.37 A in its common-emitter current-voltage characteristics at room temperature, which corresponds to a DC power of 10.4 W. A collector current density and a power density are as high as 8.2 kA/cm2 and 230 kW/cm2, respectively. These results show that nitride HBTs are promising for high-power electronic devices.

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