Emitter region delay time of AlGaAs/GaAs heterojunction bipolar transistors

ABSTRACTWe report a photoreflectance (PR) characterization of InP/GaAsSb double-heterojunction bipolar transistor (DHBT) epitaxial wafers grown by metal-organic vapor-phase epitaxy (MOVPE). The origin of the Franz-Keldysh oscillations (FKOs) in the PR spectra was identified by step etching of the samples. FKOs from the InP emitter region were observed in the wafer with low recombination forward current at the emitter-base (E/B) heterojunction. In contrast, they did not appear when recombination current was dominant. The absence of the FKOs from the emitter indicates the high concentration of the recombination centers at the E/B heterojunction. We have also measured PR spectra from InAlP/GaAsSb/InP DHBT wafers. Pronounced FKOs from InAlP emitter reflect the suppression of recombination at E/B heterojunctions.

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A hybrid model to calculate the forward delay time of heterojunction bipolar transistors

Superlattices and Microstructures ◽

10.1006/spmi.1995.1082 ◽

1995 ◽

Vol 18 (1) ◽

pp. 1-8

Author(s):

T. Kumar ◽

M. Cahay ◽

S. Shi ◽

K. Roenker ◽

W.E. Stanchina

Keyword(s):

Hybrid Model ◽

Heterojunction Bipolar Transistors ◽

Delay Time ◽

Bipolar Transistors

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Simulation of the Effect of Emitter Doping on the Delay Time in AlGaAs/GaAs Heterojunction Bipolar Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.l1650 ◽

1992 ◽

Vol 31 (Part 2, No. 12A) ◽

pp. L1650-L1653

Author(s):

Chushiro Kusano ◽

Hiroshi Masuda ◽

Kazuhiro Mochizuki ◽

Hiroshi Mizuta ◽

Ken Yamaguchi

Keyword(s):

Heterojunction Bipolar Transistors ◽

Delay Time ◽

Bipolar Transistors

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Millimetre-wave InP/InGaAs heterojunction bipolar transistors with a subpicosecond extrinsic delay time

Electronics Letters ◽

10.1049/el:19940293 ◽

1994 ◽

Vol 30 (5) ◽

pp. 456-457 ◽

Cited By ~ 9

Author(s):

J.-I. Song ◽

B.P. Van der Gaag ◽

C.J. Palmstrøm ◽

K.B. Chough ◽

W.-P. Hong

Keyword(s):

Heterojunction Bipolar Transistors ◽

Delay Time ◽

Bipolar Transistors ◽

Millimetre Wave

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TEM evaluation of graded SixGe1-x heterolayers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088786 ◽

1991 ◽

Vol 49 ◽

pp. 894-895

Author(s):

N. David Theodore ◽

Mamoru Tomozane ◽

Ming Liaw

Keyword(s):

Heterojunction Bipolar Transistors ◽

Gas Flow ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Dark Field ◽

Bipolar Transistors ◽

Structural Quality ◽

Weak Beam ◽

Transmission Electron ◽

And Behavior

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.

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TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138713 ◽

1995 ◽

Vol 53 ◽

pp. 468-469

Author(s):

N. David Theodore ◽

Donald Y.C Lie ◽

J. H. Song ◽

Peter Crozier

Keyword(s):

Integrated Circuits ◽

Heterojunction Bipolar Transistors ◽

Integrated Circuit ◽

High Speed ◽

Room Temperature ◽

Strain Relaxation ◽

Bipolar Transistors ◽

Sige Hbt ◽

Integrated Circuit Manufacturing ◽

Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

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