scholarly journals High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics

2006 ◽  
Author(s):  
Yuekang Lu
2008 ◽  
Vol 254 (8) ◽  
pp. 2336-2341 ◽  
Author(s):  
Seiichiro Yaginuma ◽  
Kenji Itaka ◽  
Yuji Matsumoto ◽  
Tsuyoshi Ohnishi ◽  
Mikk Lippmaa ◽  
...  

2000 ◽  
Vol 212 (3-4) ◽  
pp. 451-455 ◽  
Author(s):  
Tong Zhao ◽  
Huibin Lu ◽  
Fan Chen ◽  
Shouyu Dai ◽  
Guozhen Yang ◽  
...  

2017 ◽  
Vol 18 (1) ◽  
pp. 307-315 ◽  
Author(s):  
Kazuhiro Kawashima ◽  
Yuji Okamoto ◽  
Orazmuhammet Annayev ◽  
Nobuo Toyokura ◽  
Ryota Takahashi ◽  
...  

2011 ◽  
Vol 295-297 ◽  
pp. 1958-1963
Author(s):  
Jing Zhi Yang ◽  
Li Juan Fu ◽  
Xiao Peng Qi ◽  
Hong Yun Li

Zn1-xCoxO thin films on sapphire (0001) substrates were synthesized by laser molecular beam epitaxy (LMBE) method at various temperatures under a work ambient pressure of 5.0 x 10-5Pa condition. X-ray diffraction (XRD) spectra, UV–visible transmission spectra and X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectra were employed to characterize the properties of samples. All samples were of wurtzite hexagonal structure with the preferential c-axis-orientation. Co2+ions incorporated into ZnO lattice and substituted for Zn2+ions. ZnLMM Auger spectrum implied Zn interstitials existed in sample. The optical transmission of all samples was relatively high in visible region. Two PL emission peaks located at 418 nm and 490 nm were assigned to the electron transition from the Zn interstitials to the top of the valence band and from the Zn interstitials to the Zn vacancies, respectively.


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