DETERMINATION OF FLAT BAND VOLTAGE BY EXPERIMENTAL CAPACITANCE-VOLTAGE CHARACTERISTICS OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES

Scientific notes of Taurida National V.I. Vernadsky University. Series: Technical Sciences ◽

10.32838/2663-5941/2019.3-2/37 ◽

2019 ◽

Vol 3 (2) ◽

pp. 217-222

Author(s):

L.M. Korolevych ◽

◽

A.V. Borisov ◽

◽

Keyword(s):

Flat Band ◽

Flat Band Voltage ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage

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Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements

Semiconductors ◽

10.1134/s1063782619010081 ◽

2019 ◽

Vol 53 (1) ◽

pp. 42-45 ◽

Author(s):

E. I. Goldman ◽

N. F. Kuharskaya ◽

S. A. Levashov ◽

G. V. Chucheva

Keyword(s):

High Frequency ◽

Metal Insulator ◽

Insulating Layer ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage

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Characterization of a-Si:H based metal/insulator/semiconductor structures by feedback charge capacitance-voltage measurements and charge deep-level transient spectroscopy

Journal of Applied Physics ◽

10.1063/1.366247 ◽

1997 ◽

Vol 82 (9) ◽

pp. 4372-4377 ◽

Author(s):

I. Thurzo ◽

S. Teramura ◽

R. Durny ◽

V. Nádaždy ◽

M. Kumeda ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage ◽

Transient Spectroscopy ◽

Charge Capacitance

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The inflection point of the capacitance-voltage, C(VG), characteristic and the flat-band voltage of metal-oxide-semiconductor structures

Journal of Applied Physics ◽

10.1063/1.4880399 ◽

2014 ◽

Vol 115 (20) ◽

pp. 204510 ◽

Author(s):

H. M. Przewlocki ◽

T. Gutt ◽

K. Piskorski

Keyword(s):

Metal Oxide ◽

Inflection Point ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flat Band ◽

Flat Band Voltage ◽

Semiconductor Structures ◽

Capacitance Voltage

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Capacitance–voltage characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe with various insulators

Thin Solid Films ◽

10.1016/j.tsf.2012.08.024 ◽

2012 ◽

Vol 522 ◽

pp. 261-266 ◽

Author(s):

A.V. Voitsekhovskii ◽

S.N. Nesmelov ◽

S.M. Dzyadukh

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage

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Effect of annealing on the electrophysical properties of CdTe/HgCdTe passivation interface by the capacitance–voltage characteristics of the metal–insulator–semiconductor structures

AIP Advances ◽

10.1063/5.0021073 ◽

2020 ◽

Vol 10 (10) ◽

pp. 105102

Author(s):

Xi Wang ◽

Kai He ◽

Xing Chen ◽

Yang Li ◽

Chun Lin ◽

...

Keyword(s):

Electrophysical Properties ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage

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Observation of Capacitance Hunching at the Flat-Band-Voltage in Boron-Doped Diamond Metal/Insulator/Semiconductor Structure

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.l1031 ◽

1996 ◽

Vol 35 (Part 2, No. 8B) ◽

pp. L1031-L1034 ◽

Author(s):

Sei Suzuki ◽

Yuzuru Otsuka ◽

Tetsuro Maki ◽

Takeshi Kobayashi

Keyword(s):

Semiconductor Structure ◽

Flat Band ◽

Flat Band Voltage ◽

Boron Doped Diamond ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

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Capacitance-voltage characteristics of metal-insulator-semiconductor structures (Review article)

Low Temperature Physics ◽

10.1063/1.5116531 ◽

2019 ◽

Vol 45 (8) ◽

pp. 823-840

Author(s):

A. Levchenko ◽

L. Mezhov-Deglin ◽

I. Chikina ◽

V. Shikin

Keyword(s):

Review Article ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage

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Effect of oxygen species on the positive flat-band voltage shift in Al2O3/GaN metal–insulator–semiconductor capacitors with post-deposition annealing

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/46/15/155101 ◽

2013 ◽

Vol 46 (15) ◽

pp. 155101 ◽

Author(s):

Hee-Sung Kang ◽

M Siva Pratap Reddy ◽

Dong-Seok Kim ◽

Ki-Won Kim ◽

Jong-Bong Ha ◽

...

Keyword(s):

Flat Band ◽

Oxygen Species ◽

Flat Band Voltage ◽

Post Deposition Annealing ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Voltage Shift ◽

Effect Of Oxygen ◽

Post Deposition

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Frequency-dependent capacitance-voltage characteristics for amorphous silicon-based metal-insulator-semiconductor structures

IEEE Transactions on Electron Devices ◽

10.1109/16.163450 ◽

1992 ◽

Vol 39 (11) ◽

pp. 2515-2522 ◽

Author(s):

J.S. Choi ◽

G.W. Neudeck

Keyword(s):

Amorphous Silicon ◽

Metal Insulator ◽

Frequency Dependent ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage ◽

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High-frequency capacitance–voltage measurement of plasma-enhanced chemical-vapor-deposition-grown SiO2/n-GaN metal-insulator-semiconductor structures

Applied Physics Letters ◽

10.1063/1.1418451 ◽

2001 ◽

Vol 79 (21) ◽

pp. 3530-3532 ◽

Author(s):

P. Chen ◽

W. Wang ◽

S. J. Chua ◽

Y. D. Zheng

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

High Frequency ◽

Chemical Vapor ◽

Voltage Measurement ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage

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