scholarly journals High Temperature Viscous Lubricants Compatibility

2021 ◽  
Vol 137 (6) ◽  
pp. 24-30
Author(s):  
S. A. Gasimova ◽  
Keyword(s):  
High Temperature ◽  
Oxidative Stability ◽  
Wide Temperature Range ◽  
Roller Bearing ◽  
The State ◽  
Alkaline Complex ◽  
Temperature Range ◽  
Complex Lithium

The state and prospects of research in the field of compatibility of viscous lubricants are analyzed. A new stand for mixing lubricants was presented, simulating the operation of a roller bearing in a wide temperature range. A method has been developed for testing the compatibility of high-temperature lubricants in terms of thermomechanical and thermo-oxidative stability. The results of a study of the compatibility of complex lithium, super-alkaline complex sulfonate and ureate lubricants are presented.

CMOS Circuits on Silicon Carbide for High Temperature Operation

2014 ◽  
Vol 1693 ◽  
Author(s):  
David T. Clark ◽  
Robin F. Thompson ◽  
Aled E. Murphy ◽  
David A. Smith ◽  
Ewan P. Ramsay ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Wide Temperature Range ◽  
Integrated Circuit ◽  
Elevated Temperatures ◽  
Logic Circuits ◽  
Digital Logic ◽  
Cmos Integrated Circuit ◽  
Temperature Range ◽  
Simple Logic

ABSTRACTWe present the characteristics of a high temperature CMOS integrated circuit process based on 4H silicon carbide designed to operate at temperatures beyond 300°C. N-channel and P-channel transistor characteristics at room and elevated temperatures are presented. Both channel types show the expected low values of field effect mobility well known in SiC MOSFETS. However the performance achieved is easily capable of exploitation in CMOS digital logic circuits and certain analogue circuits, over a wide temperature range.Data is also presented for the performance of digital logic demonstrator circuits, in particular a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. Devices are packaged in high temperature ceramic dual in line (DIL) packages, which are capable of greater than 300°C operation. A high temperature “micro-oven” system has been designed and built to enable testing and stressing of units assembled in these package types. This system heats a group of devices together to temperatures of up to 300°C while keeping the electrical connections at much lower temperatures. In addition, long term reliability data for some structures such as contact chains to n-type and p-type SiC and simple logic circuits is summarized.

scholarly journals High temperature, Smart Power Module for aircraft actuators

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000069-000074
Author(s):  
Khalil El Falahi ◽  
Stanislas Hascoët ◽  
Cyril Buttay ◽  
Pascal Bevilacqua ◽  
Luong-Viet Phung ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Wide Temperature Range ◽  
Power Module ◽  
Smart Power ◽  
Temperature Range ◽  
Electric Aircraft ◽  
Gate Driver ◽  
Proper Operation ◽  
More Electric Aircraft

More electric aircraft require converters that can operate over a wide temperature range (−55 to more than 200°C). Silicon carbide JFETs can satisfy these requirements, but there is a need for suitable peripheral components (gate drivers, passives. . . ). In this paper, we present a “smart power module” based on SiC JFETs and dedicated integrated gate driver circuits. The design is detailed, and some electrical results are given, showing proper operation of the module up to 200°C.

A Robust SOI Gain-Boosted Operational Amplifier Targeting High Temperature Precision Applications up to 300°C

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000238-000242
Author(s):  
Alexander Schmidt ◽  
Abdel Moneim Marzouk ◽  
Holger Kappert ◽  
Rainer Kokozinski
Keyword(s):  
High Temperature ◽  
Circuit Design ◽  
Robust Design ◽  
Wide Temperature Range ◽  
Operational Amplifier ◽  
Operating Temperature ◽  
High Gain ◽  
Temperature Range ◽  
Op Amp ◽  
Operating Temperature Range

Data acquisition and signal processing at elevated temperatures are facing various problems due to a wide temperature range operation, affecting the accuracy of the circuits' references and elementary building blocks. As the most commonly used analog building block, the operational amplifier (op-amp) with its various limitations has to be enhanced for wide temperature range operation. Thereby major effort is put into maximizing signal gain and simultaneously reaching high gain-bandwidth also for high temperatures. Future robust design approaches have to consider a growing operating temperature range and increasing device parameter mismatch due to the downsizing of integrated circuits. Addressing one of the major problems in circuit design for the next decades, compensating these effects through new design approaches will have a lasting impact on circuit design. In this paper we present a high gain operational amplifier with a folded-cascode and gain-boosted input stage, fabricated in a 1.0 μm SOI CMOS process. The operational amplifier was designed for an operating temperature range of −40…300°C. Major effort was put into a robust design approach with reduced sensitivity to temperature variations, targeting high precision applications in a high temperature environment. With a supply voltage of 5 V, the maximum simulated current consumption of the op-amp is 210 μA which leads to overall maximum power consumption of 1.05 mW. The open loop DC gain of the amplifier is expected to reach a minimum of 108 dB and a unity-gain-frequency of 1.02 MHz at a temperature of 300°C. For all temperatures the phase margin varies from 55…70 degrees for a 3 pF load.

Water Confinement in Faujasite Cages: A Deuteron NMR Investigation in a Wide Temperature Range. 2. Spectra and Relaxation at High Temperature

2014 ◽  
Vol 118 (29) ◽  
pp. 5371-5380 ◽  
Author(s):  
A. M. Szymocha ◽  
Z. T. Lalowicz ◽  
A. Birczyński ◽  
M. Krzystyniak ◽  
G. Stoch ◽  
...  
Keyword(s):  
High Temperature ◽  
Wide Temperature Range ◽  
Temperature Range ◽  
Deuteron Nmr

scholarly journals Inelastic rate coefficients based on an improved potential energy surface for N2 + N2 collisions in a wide temperature range

2020 ◽  
Vol 22 (17) ◽  
pp. 9375-9387
Author(s):  
Qizhen Hong ◽  
Quanhua Sun ◽  
Massimiliano Bartolomei ◽  
Fernando Pirani ◽  
Cecilia Coletti
Keyword(s):  
High Temperature ◽  
Potential Energy ◽  
Potential Energy Surface ◽  
Inelastic Scattering ◽  
Wide Temperature Range ◽  
Energy Surface ◽  
Rate Coefficients ◽  
Temperature Range ◽  
Temperature Regimes ◽  
Vibration Rate

Vibration-to-translation and vibration-to-vibration rate coefficients for N2–N2 inelastic scattering are calculated on an improved potential including high temperature regimes.

Damping Capacity of Fe-Ga Alloys

2011 ◽  
Vol 228-229 ◽  
pp. 937-941 ◽  
Author(s):  
Fang Mei Ling ◽  
Jie Zhu ◽  
Li Ji Heng ◽  
Gao Xue Xu
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Wide Temperature Range ◽  
Room Temperature ◽  
Damping Capacity ◽  
Torsion Pendulum ◽  
Temperature Peak ◽  
Temperature Range ◽  
Computer Controlled ◽  
Increasing Temperature

The damping capacity of Fe-Ga rods and sheets has been studied using a computer-controlled automatic inverted torsion pendulum instruments in a wide temperature range in a series of frequency. The frequency and temperature has different influence on the damping capacity of solidified Fe83Ga17 rods and (Fe83Ga17)97.25Cr2B0.75 sheets. The damping capacity of all specimens increased with frequencies. The solidified Fe-Ga rods showed an obvious low-temperature peak and a potential high-temperature peak with increasing temperature. However, the damping capacity of Fe-Ga sheets kept steady in a wide temperature range and then rapidly increased on further heating above 400°C. Damping capacity of about 0.02 was obtained in both Fe-Ga rods and sheets at temperatures from room temperature to 500°C. Thus, The Fe-Ga alloys are considered to be a class of promising high damping alloys.

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