scholarly journals Síntesis y caracterización de un compuesto semiconductor NiO-ZnO dopado con nanopartículas de Au por el método sol-gel para aplicación como sensores de gas

2019 ◽  
pp. 5-10 ◽  

Síntesis y caracterización de un compuesto semiconductor NiO-ZnO dopado con nanopartículas de Au por el método sol-gel para aplicación como sensores de gas Alex Díaz, Dionicio Otiniano, E. Della Gaspera, Alessandro Martucci Departamento de Ingeniería de Materiales, Universidad Nacional de Trujillo-Perú Dipartimento d’Ingegneria Meccanica – Settore Materiali, Universita di Padova, 35131 Padova-Italia DOI: https://doi.org/10.33017/RevECIPeru2012.0002/ RESUMEN Láminas porosas de un compuesto semiconductor formado por NiO-ZnO (%mol) dopado con nanopartículas de Au (3% mol) fueron preparados por el método sol-gel usando acetato de níquel tetrahidratado (NiC4H6O4.4H2O) y acetato de zinc dihidratado (C4H6O4Zn.2H2O) como precursores, metanol (CH6OH) y etanol (C2H6O) como solventes, monoetanolamina (C2H7NO) y dietanolamina (C4H11NO2) como ligantes funcionales, y ácido cloroaúrico HAuCl4 como precursor. Las muestras se caracterizaron por espectroscopias Infrarrojo (IR), ultravioleta (UV-VIS), microscopía SEM, difracción de rayos X (XRD), y ensayos de sensores gaseosos. Las muestras semiconductoras fueron depositadas sobre substratos de silicio por el método de spin-coating a 2000 rpm, posteriormente fueron tratadas a 500 y 600 ºC. Los efectos de las composiciones de NiO-ZnO y el porcentaje de dopaje también se discuten en este argumento. El espesor de la capa fue determinado por elipsometria aproximado a 75 nm. Estos compuestos fueron ensayados para sensores gaseosos de H2 y CO (1% V/V) a 300ºC, demostrando óptimos resultados para el H2, pero no así para el CO. Descriptores: NiO, ZnO, semiconductores, sensor gaseoso. ABSTRACT Porous films formed by a semiconductor ZnO-NiO (% mol) doped with Au nanoparticles (3% mol) were prepared by sol-gel method using nickel acetate tetrahydrate (NiC4H6O4.4H2O) and zinc acetate dihydrate (C4H6O4Zn.2H2O) as precursors, methanol (CH6OH) and ethanol (C2H6O) as solvents, monoethanolamine (C2H7NO) and diethanolamine (C4H11NO2) as functional chelants, and chloroauric acid (HAuCl4) as gold precursor. The samples were characterized by infrared (IR) and ultraviolet (UV-VIS) spectroscopy, microscopy SEM, X-ray diffraction (XRD) and gas sensing tests. The semiconductor samples were deposited on silicon substrates by spin-coating method at 2000 rpm, subsequently annealing at 500 and 600 °C. The effects of the compositions of NiO-ZnO and the percentage of doping are also discussed. The layer thickness was determined by ellipsometry in approximately 75 nm. These compounds were tested for gas sensors for H2 and CO (1% V/V) at 300 °C, showing excellent results for H2, but not for the CO. Keywords: NiO, ZnO, semiconductors, gas sensor.

2018 ◽  
Vol 29 (18) ◽  
pp. 15587-15596 ◽  
Author(s):  
A. Nieto ◽  
T. Hernández ◽  
Javier Rivera De la Rosa ◽  
F. J. Garza Méndez ◽  
M. de la L. Olvera ◽  
...  

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
K. A. Eswar ◽  
J. Rouhi ◽  
H. F. Husairi ◽  
M. Rusop ◽  
S. Abdullah

ZnO nanoparticles were successfully deposited on porous silicon (PSi) substrate using spin-coating method. In order to prepare PSi, electrochemical etching was employed to modify the Si surface. Zinc acetate dihydrate was used as a starting material in ZnO sol-gel solution preparation. The postannealing treatments were investigated on morphologies and photoluminescence (PL) properties of the ZnO thin films. Field emission scanning electron microscopy (FESEM) results indicate that the thin films composed by ZnO nanoparticles were distributed uniformly on PSi. The average sizes of ZnO nanoparticle increase with increasing annealing temperature. Atomic force microscopic (AFM) analysis reveals that ZnO thin films annealed at 500°C had the smoothest surface. PL spectra show two peaks that completely correspond to nanostructured ZnO and PSi. These findings indicate that the ZnO nanostructures grown on PSi are promising for application as light emitting devices.


2011 ◽  
Vol 287-290 ◽  
pp. 2217-2220 ◽  
Author(s):  
Qing Wang ◽  
Xiao Nan Zhang ◽  
Xiao Di Huo ◽  
Ren Hui Zhang ◽  
Jian Feng Dai

Nanocrystalline ZnO and Zn2TiO4 porous film electrodes were prepared by sol-gel method and spin coating method, and the nanocrystalline porous films were characterized by XRD and SEM. Using ZnPc dye and PbS quantum dots as sensitizers. The nanocrystalline film electrodes of ZnO series and Zn2TiO4 series were prepared separately, and their absorption characteristics observed by UV-vis spectrophotometer. The results showed that ZnPc dye and PbS quantum dots could well sensitize the film electrodes, and the effect of ZnPc dye and PbS quantum dots composite sensitization was optimal. Then, the solar cells were fabricated. In simulation sunlight, the overall photoelectric conversion efficiency by Zn2TiO4/Q-PbS/ZnPc electrode increased by 22%, relative to the ZnO/Q-PbS/ZnPc electrode’s.


2005 ◽  
Vol 12 (04) ◽  
pp. 605-610 ◽  
Author(s):  
M. RUSOP ◽  
K. UMA ◽  
T. SOGA ◽  
T. JIMBO

ZnO and Zn 1-x Mg x O thin films were prepared on glass and silicon substrates by spin coating method using 2-methoxyethanol solution of zinc acetate dihydrate and magnesium acetate dihydrate stabilized by monoethanolamine. The effects of drying and annealing condition of structural and optical properties of the films were studied. It was found that the samples annealed at 650°C improves the crystallographic orientation of the ZnO films grown by the sol-gel process significantly. Two types of substrates were used to examine the substrate effects of the growth of Zn 1-x Mg x O thin films. In corning glass substrates, the lattice constant decreased by a little with increasing concentration of Mg , whereas in the case of silicon substrates, the lattice constant decreased rapidly with x when compared to the glass substrates. The optical band energy gaps of Zn 1-x Mg x O thin films were slightly increased with increasing concentration of Mg .


2015 ◽  
Vol 1109 ◽  
pp. 613-616 ◽  
Author(s):  
Aadila Aziz ◽  
N.A.M. Asib ◽  
A.N. Afaah ◽  
Ruziana Mohamed ◽  
M. Rusop ◽  
...  

Different layers of PMMA spin coated onto substrate were successful prepared by sol-gel spin-coating method. PMMA was dissolved in toluene solvent and was aged for 24 hours to produce the homogeneous solution. The films were then characterized by Raman Spectroscopy and Ultraviolet-Visible (UV-Vis) spectroscopy. Raman spectroscopy studied reveals the 7 layers of PMMA film exhibit the strong and sharp intense peak at observed band around 810 cm-1 that is due to the symmetric CC4 stretching. The UV-Vis measurement present 7 layers of PMMA film have good absorption due to the small size of particles and uniform surface of the film.


2020 ◽  
Vol 38 (1) ◽  
pp. 17-22
Author(s):  
G Balakrishnan ◽  
Vivek Sinha ◽  
Yogesh Palai Peethala ◽  
Manoj Kumar ◽  
R.J. Golden Renjith Nimal ◽  
...  

AbstractZinc oxide (ZnO) thin films were deposited on Si (1 0 0) and glass substrates by sol-gel spin coating technique. Zinc acetate dihydrate, monoethanolamine and isopropanol were used as the sources for precursor solution and the resulting gel was used for the preparation of ZnO thin films. The films were annealed at different temperatures (100 °C to 500 °C) and the effect of annealing on the structural and optical properties was investigated. X-ray diffraction (XRD) and UV-Vis spectroscopy were used for the analysis of the films. The XRD results indicated the polycrystalline hexagonal structure of the ZnO films with (0 0 2) orientation. The optical properties of the films were studied using UV-Vis spectrophotometer in the wavelength range of 190 – 1100 nm. The optical characterization of the ZnO thin films showed the high transmittance of ~90 % for the films annealed at 400 °C. The films showed the absorbance ~360 – 390 nm and bandgap values of 3.40 – 3.10 eV, depending on the annealing temperature of the films.


2011 ◽  
Vol 345 ◽  
pp. 23-28 ◽  
Author(s):  
Bin Zhu ◽  
Chen Bo Yin ◽  
Zi Li Zhang ◽  
Chun Min Tao ◽  
Ning Ning Dong

A gas sensor with planar-type micro-hotplate (MHP) with Si-island was designed and fabricated in this paper. The sensor was fabricated simply by using only three masks for the lithography process. The temperature distribution across the sensitive film was simulated and analyzed using ANSYS. A uniform temperature distribution was obtained after added Si-island. The SnO2 sensitive film was deposited through sol-gel spin-coating method and showed reasonable gas-sensing properties to hydrogen at 300°C.


2017 ◽  
Vol 623 ◽  
pp. 14-18 ◽  
Author(s):  
Fenglin Tang ◽  
Chao Mei ◽  
Peiyu Chuang ◽  
Tingting Song ◽  
Hailin Su ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document