Effect of the deposition temperature and a hydrogen post-annealing treatment on the structural, electrical, and optical properties of Ga-doped ZnO films

2009 ◽  
Vol 5 (3) ◽  
pp. 127-133 ◽  
Author(s):  
Min-Jung Lee ◽  
Tae-Il Lee ◽  
Jinhyong Lim ◽  
Jungsik Bang ◽  
Woong Lee ◽  
...  
2001 ◽  
Vol 692 ◽  
Author(s):  
K. S. Huh ◽  
D. K. Hwang ◽  
K. H. Bang ◽  
M. K. Hong ◽  
D. H. Lee ◽  
...  

AbstractA series of ZnO thin films with various deposition temperatures were prepared on (100) GaAs substrates by radio-frequency magnetron sputtering using ZnO target. The ZnO films were studied by field emission scanning electron microscope(FESEM), x-ray diffraction(XRD), photoluminescence(PL), cathodoluminescence(CL), and Hall measurements. The structural, optical, and electrical properties of the films were discussed as a function of the deposition temperature. With increasing temperature, the compressive stress in the films was released and their crystalline and optical properties were improved. From the depth profile of As measured by secondary ion mass spectrometry(SIMS), As doping was confirmed, and, in order to activate As dopant atoms, post-annealing treatment was performed. After annealing treatment, electrical and optical properties of the films were changed.


2016 ◽  
Vol 599 ◽  
pp. 19-26 ◽  
Author(s):  
S. Kuprenaite ◽  
A. Abrutis ◽  
V. Kubilius ◽  
T. Murauskas ◽  
Z. Saltyte ◽  
...  

2008 ◽  
Vol 53 (9(5)) ◽  
pp. 2947-2950 ◽  
Author(s):  
T. Muranaka ◽  
A. Nisii ◽  
T. Uehara ◽  
T. Sakano ◽  
Y. Nabetani ◽  
...  

2012 ◽  
Vol 86 (11) ◽  
Author(s):  
Achim Kronenberger ◽  
Angelika Polity ◽  
Detlev M. Hofmann ◽  
Bruno K. Meyer ◽  
André Schleife ◽  
...  

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