Effects of As Doping on Properties of ZnO Films

2001 ◽  
Vol 692 ◽  
Author(s):  
K. S. Huh ◽  
D. K. Hwang ◽  
K. H. Bang ◽  
M. K. Hong ◽  
D. H. Lee ◽  
...  
Keyword(s):  
Optical Properties ◽  
Secondary Ion Mass Spectrometry ◽  
Annealing Treatment ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
As Doping ◽  
Dopant Atoms ◽  
Increasing Temperature ◽  
Secondary Ion

AbstractA series of ZnO thin films with various deposition temperatures were prepared on (100) GaAs substrates by radio-frequency magnetron sputtering using ZnO target. The ZnO films were studied by field emission scanning electron microscope(FESEM), x-ray diffraction(XRD), photoluminescence(PL), cathodoluminescence(CL), and Hall measurements. The structural, optical, and electrical properties of the films were discussed as a function of the deposition temperature. With increasing temperature, the compressive stress in the films was released and their crystalline and optical properties were improved. From the depth profile of As measured by secondary ion mass spectrometry(SIMS), As doping was confirmed, and, in order to activate As dopant atoms, post-annealing treatment was performed. After annealing treatment, electrical and optical properties of the films were changed.

New Ge-Sn materials with adjustable bandgaps and lattice constants

2002 ◽  
Vol 744 ◽  
Author(s):  
Matthew R. Bauer ◽  
John Tolle ◽  
A. V. G. Chizmeshya ◽  
S. Zollner ◽  
J. Menendez ◽  
...  
Keyword(s):  
Optical Properties ◽  
Secondary Ion Mass Spectrometry ◽  
Compositional Dependence ◽  
X Ray Diffraction ◽  
Chemical Methods ◽  
Lattice Constants ◽  
New Class ◽  
Transmission Electron ◽  
Wide Range ◽  
Secondary Ion

ABSTRACTThe synthesis and optical properties of a new class of Si-based infrared semiconductors in the Ge1-x Snx system are described. Chemical methods based on deuterium-stabilized Sn hydrides and UHV-CVD were used to prepare a wide range of metastable compositions and structures directly on silicon. These materials exhibit high thermal stability, superior crystallinity, and unique crystallographic and optical properties, such as adjustable band gaps and lattice constants. These properties are characterized by Rutherford backscattering, low-energy secondary ion mass spectrometry, high-resolution transmission electron microscopy, x-ray diffraction as well as infrared and Raman spectroscopies and spectroscopic ellipsometry. The films grow essentially strain free and display a strong compositional dependence of the band structure.

Effects of misfit strain on properties of ZnO films grown by pulsed laser deposition

2001 ◽  
Vol 696 ◽  
Author(s):  
M.C. Park ◽  
W.H. Yoon ◽  
D.H. Lee ◽  
J.M. Myoung ◽  
S.H. Bae ◽  
...  
Keyword(s):  
Optical Properties ◽  
Film Thickness ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Xrd Analysis ◽  
Misfit Strain ◽  
Laser Deposition ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties

AbstractA series of ZnO films with various thicknesses were prepared on (0001) sapphire substrate by pulsed laser deposition (PLD). Scanning electron microscopy (SEM) and x-ray diffraction (XRD) analysis were utilized to investigate the effects of misfit strain on the surface morphology and the crystallinity. The electrical and optical properties of the films were also investigated as a function of the film thickness. It was found that the crystalline quality, electrical and optical properties of the films depended on the film thickness and were improved with increasing the film thickness. This is attributed to the fact that the films thinner than 400 nm are under the severe misfit strain, which decreases as the film thickness increases further.

Effect of Thickness on the Structural, Electrical and Optical Properties of ZnO Films Deposited by MBE

2011 ◽  
Vol 311-313 ◽  
pp. 1271-1276 ◽  
Author(s):  
Xiao Dong Yang ◽  
Shi Chen Su ◽  
Yi Xu ◽  
Ting Mei
Keyword(s):  
Optical Properties ◽  
Film Thickness ◽  
Film Surface ◽  
Growth Time ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
Optical Absorbance ◽  
Sapphire Substrates ◽  
Different Thickness

A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural, electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing, and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance, Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film.

ELECTRICAL AND OPTICAL PROPERTIES OF MULTILAYER SOL GEL ZnO COATINGS

2006 ◽  
Vol 20 (23) ◽  
pp. 3357-3364 ◽  
Author(s):  
TALAAT MOUSSA HAMMAD
Keyword(s):  
Carrier Mobility ◽  
Sol Gel ◽  
Dip Coating ◽  
Free Carrier ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
Zinc Oxide Films ◽  
Free Carrier Density ◽  
Fine Microstructure

Multilayer transparent conducting zinc oxide films have been prepared on boro-silicate substrates by the commercially sol gel dip coating process. Each layer was fired at 550°C in a conventional furnace for 15 min. The final coatings were then tempered under a flux of forming gas ( N 2/ H 2) at 400°C for 2 h. The coatings were characterized by surface stylus profiling and optical spectroscopy (UV-NIR). Results show that (1) ZnO films with electrical resistivity of 6×10-4 Ω· cm , free carrier mobility of approximately 77 cm 2/ V · s and free carrier density of approximately 6.14×1019 cm -3 are obtained for multilayers 310 nm and (2) the transmittance is approximately 60.4% and the reflectance is nearly 34.7% are obtained at a wavelength of 800 nm when the thickness of the ZnO multilayers is 310 nm. The crystal structure and grain orientation of ZnO films were determined by X-ray diffraction. SEM investigations revealed that the surface morphology of growing ZnO films on boro-silicate substrate is dominated by the smooth surface with a fine microstructure.

Electrical and optical properties of ZnO films sequentially implanted with P ions

2011 ◽  
Vol 26 (12) ◽  
pp. 125016 ◽  
Author(s):  
Y H Xue ◽  
X D Zhang ◽  
Y Y Shen ◽  
D C Zhang ◽  
F Zhu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Zno Films ◽  
Electrical And Optical Properties

Growth of Rutile TiO2 Nanorods by Chemical Bath Deposition Method on Silicon Substrate at Different Annealing Temperature

2014 ◽  
Vol 624 ◽  
pp. 129-133 ◽  
Author(s):  
Abbas M. Selman ◽  
Zainuriah Hassan
Keyword(s):  
Optical Properties ◽  
Chemical Bath Deposition ◽  
Visible Region ◽  
Annealing Treatment ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Rutile Structure ◽  
Uv Emission ◽  
Cbd Method ◽  
P Type

Effects of annealing treatment on growth of rutile TiO2nanorods on structural, morphological and optical properties of TiO2nanorods were investigated. The nanorods were fabricated on p-type (111)-oriented silicon substrates and, all substrates were seeded with a TiO2seed layer synthesized by radio-frequency reactive magnetron sputtering system. Chemical bath deposition (CBD) was carried out to grow rutile TiO2nanorods on Si substrate at different annealing temperatures (350, 550, 750, and 950 °C). Raman spectroscopy, X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) analyses showed the tetragonal rutile structure of the synthesized TiO2nanorods. Optical properties were examined by photoluminescence spectroscopy. The spectra exhibit one strong UV emission peak which can be seen at around 390 nm for all of the samples. In the visible region, TiO2demonstrated two dominant PL emissions centered at around 519 and 705 nm. The experimental results showed that the TiO2nanorods annealed at 550 °C exhibited the optimal structural properties. Moreover, the CBD method enabled the formation of photosensitive, high-quality rutile TiO2nanorods with few defects for future optoelectronic nanodevice applications.

scholarly journals Growth and Device Performance of GaN Schottky Rectifiers

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
Jen-Inn Chyi ◽  
C. -M. Lee ◽  
C.C. Chuo ◽  
G. C. Chi ◽  
G. T. Dang ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Negative Temperature ◽  
Organic Chemical ◽  
Schottky Rectifiers ◽  
Metal Organic ◽  
Increasing Temperature ◽  
Organic Chemical Vapor Deposition ◽  
Secondary Ion

Undoped, 4µm thick GaN layers grown by Metal Organic Chemical Vapor Deposition were used for fabrication of high stand off voltage (356 V) Schottky diode rectifiers. The figure of merit VRB2/RON, where VRB is the reverse breakdown voltage and RON is the on-resistance, was ~ 4.53 MW-cm−2 at 25°C. The reverse breakdown voltage displayed a negative temperature coefficient, due to an increase in carrier concentration with increasing temperature. Secondary Ion Mass Spectrometry measurements showed that Si and O were the most predominant electrically active impurities present in the GaN.

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