scholarly journals Self-limiting Nitrogen/Hydrogen Plasma Radical Chemistry in Plasma-Enhanced Atomic Layer Deposition of Cobalt

2021 ◽  
Author(s):  
Ji Liu ◽  
Hongliang Lu ◽  
David Wei Zhang ◽  
Michael Nolan
Keyword(s):  
Atomic Layer Deposition ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Radical Chemistry ◽  
Layer Deposition

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

scholarly journals Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3

Materials ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1058
Author(s):  
Katherine Hansen ◽  
Melissa Cardona ◽  
Amartya Dutta ◽  
Chen Yang
Keyword(s):  
Atomic Layer Deposition ◽  
Ultrathin Films ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Blue Shift ◽  
Transition Metal Nitrides ◽  
Temperature Plasma ◽  
Promising Alternative ◽  
Layer Deposition ◽  
Post Deposition

Transition metal nitrides, like titanium nitride (TiN), are promising alternative plasmonic materials. Here we demonstrate a low temperature plasma-enhanced atomic layer deposition (PE-ALD) of non-stoichiometric TiN0.71 on lattice-matched and -mismatched substrates. The TiN was found to be optically metallic for both thick (42 nm) and thin (11 nm) films on MgO and Si <100> substrates, with visible light plasmon resonances in the range of 550–650 nm. We also demonstrate that a hydrogen plasma post-deposition treatment improves the metallic quality of the ultrathin films on both substrates, increasing the ε1 slope by 1.3 times on MgO and by 2 times on Si (100), to be similar to that of thicker, more metallic films. In addition, this post-deposition was found to tune the plasmonic properties of the films, resulting in a blue-shift in the plasmon resonance of 44 nm on a silicon substrate and 59 nm on MgO.

Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition

2018 ◽  
Vol 347 ◽  
pp. 181-190 ◽  
Author(s):  
L. Tian ◽  
S. Ponton ◽  
M. Benz ◽  
A. Crisci ◽  
R. Reboud ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Nitride ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Исследование влияния обработки поверхности Si-подложек на морфологию слоев GaP, полученных методом плазмохимического атомно-слоевого осаждения

2022 ◽  
Vol 56 (2) ◽  
pp. 213
Author(s):  
А.В. Уваров ◽  
В.А. Шаров ◽  
Д.А. Кудряшов ◽  
А.С. Гудовских
Keyword(s):  
Surface Roughness ◽  
Atomic Layer Deposition ◽  
Surface Treatment ◽  
Hydrogen Plasma ◽  
Argon Plasma ◽  
Atomic Layer ◽  
Root Mean Square Roughness ◽  
Si Substrates ◽  
Layer Deposition ◽  
Dimensional Growth

Investigations of atomic-layer deposition of GaP layers on Si substrates with different orientations and with different preliminary surface treatment have been carried out. The deposition of GaP was carried out by the method of plasma enhanced atomic-layer deposition using in situ treatment in argon plasma. It was shown that at the initial stage of the growth of GaP layers on precisely oriented (100) Si substrates and with misorientation, two-dimensional growth occurs both after chemical and plasma surface treatment. Upon growth on (111) substrates, after plasma treatment of the surface, a transition to three-dimensional growth is observed, at which the size of islands reaches 30–40 nm. The smallest root-mean-square roughness of the surface of the growing GaP layers (<0.1 nm) was achieved for (100) substrates with a misorientation of 4 °. The GaP layers grown on (100) substrates had a roughness of ~ 0.1 nm, and on substrates with the (111) orientation - 0.12 nm. It was found that the surface treatment of Si substrates with the (100) orientation in hydrogen plasma leads to a slight increase in the surface roughness of growing GaP layers (0.12–0.14 nm), which is associated with the effect of inhomogeneous etching of silicon in hydrogen plasma. When treating the (100) silicon surface in argon plasma, the surface roughness does not change significantly in comparison with the chemical surface treatment. On the surface of substrates with preliminary deposition of an epitaxial Si layer with a thickness of 4 nm, the morphology of GaP layers is the same as in the case of using hydrogen plasma.

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