scholarly journals Single Electron Memory Effect Using Random Telegraph Signals at Room Temperature

2019 ◽  
Vol 7 ◽  
Author(s):  
Kouta Ibukuro ◽  
Muhammad Khaled Husain ◽  
Zuo Li ◽  
Joseph Hillier ◽  
Fayong Liu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Room Temperature ◽  
Single Electron ◽  
Random Telegraph Signals

scholarly journals Silicon single-electron random number generator based on random telegraph signals at room temperature

AIP Advances ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 115101
Author(s):  
Kouta Ibukuro ◽  
Fayong Liu ◽  
Muhammad Khaled Husain ◽  
Moïse Sotto ◽  
Joseph Hillier ◽  
...  
Keyword(s):  
Room Temperature ◽  
Random Number ◽  
Random Number Generator ◽  
Single Electron ◽  
Number Generator ◽  
Random Telegraph Signals

scholarly journals Single-electron detection utilizing coupled nonlinear microresonators

2020 ◽  
Vol 6 (1) ◽  
Author(s):  
Xuefeng Wang ◽  
Xueyong Wei ◽  
Dong Pu ◽  
Ronghua Huan
Keyword(s):  
Scientific Community ◽  
Room Temperature ◽  
Detection Method ◽  
Single Electron ◽  
Nonlinear Coupling ◽  
Electron Charge ◽  
Micromechanical Resonators ◽  
Charge Detection ◽  
Simple Strategy ◽  
Electron Detection

Abstract Since the discovery of the electron, the accurate detection of electrical charges has been a dream of the scientific community. Owing to some remarkable advantages, micro/nanoelectromechanical system-based resonators have been used to design electrometers with excellent sensitivity and resolution. Here, we demonstrate a novel ultrasensitive charge detection method utilizing nonlinear coupling in two micromechanical resonators. We achieve single-electron charge detection with a high resolution up to 0.197 ± 0.056 $${\mathrm{e}}/\sqrt {{\mathrm{Hz}}}$$ e / Hz at room temperature. Our findings provide a simple strategy for measuring electron charges with extreme accuracy.

Si Nanocrystal Memory Cell with Room-Temperature Single Electron Effects

2001 ◽  
Vol 40 (Part 1, No. 2A) ◽  
pp. 447-451 ◽  
Author(s):  
Ilgweon Kim ◽  
Sangyeon Han ◽  
Kwangseok Han ◽  
Jongho Lee ◽  
Hyungcheol Shin
Keyword(s):  
Room Temperature ◽  
Memory Cell ◽  
Single Electron ◽  
Si Nanocrystal ◽  
Nanocrystal Memory ◽  
Electron Effects

High performance shape memory effect in nitinol wire for actuators with increased operating temperature range

2014 ◽  
Vol 07 (05) ◽  
pp. 1450063 ◽  
Author(s):  
Riccardo Casati ◽  
Carlo Alberto Biffi ◽  
Maurizio Vedani ◽  
Ausonio Tuissi
Keyword(s):  
Shape Memory ◽  
Shape Memory Effect ◽  
Memory Effect ◽  
High Performance ◽  
Room Temperature ◽  
Operating Temperature ◽  
Niti Wire ◽  
Shape Memory Actuators ◽  
Nitinol Wire ◽  
Operating Temperature Range

In this research, the high performance shape memory effect (HP-SME) is experimented on a shape memory NiTi wire, with austenite finish temperature higher than room temperature. The HP-SME consists in the thermal cycling of stress induced martensite and it allows achieving mechanical work higher than that produced by conventional shape memory actuators based on the heating/cooling of detwinned martensite. The Nitinol wire was able to recover about 5.5% of deformation under a stress of 600 MPa and to withstand about 5000 cycles before failure. HP-SME path increased the operating temperature of the shape memory actuator wire. Functioning temperatures higher than 100°C was reached.

scholarly journals Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors

2017 ◽  
Vol 28 (12) ◽  
pp. 125208 ◽  
Author(s):  
Zahid A K Durrani ◽  
Mervyn E Jones ◽  
Chen Wang ◽  
Dixi Liu ◽  
Jonathan Griffiths
Keyword(s):  
Excited States ◽  
Quantum Confinement ◽  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors
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