scholarly journals Optical Parameters of Atomically Heterogeneous Systems Created by Plasma Based Low Energy Ion Beams: Wavelength Dependence and Effective Medium Model

2021 ◽  
Vol 9 ◽  
Author(s):  
Krishn Pal Singh ◽  
Sudeep Bhattacharjee
Keyword(s):  
Optical Conductivity ◽  
Optical Constants ◽  
Ion Beam ◽  
Incident Light ◽  
Input Parameter ◽  
Ion Beams ◽  
Skin Depth ◽  
Dielectric Constants ◽  
Low Energy ◽  
Optical Parameters

The article presents the irradiation effects of low energy (∼0.5 keV) inert gaseous Argon ion beams on optical constants [real (n) and imaginary (k) parts of the refractive index], dielectric constants, skin depth, and optical conductivity of copper (Cu), silver (Ag), and aluminum (Al) metallic thin films (MTF). The optical constants of pristine MTF are obtained by employing the universal Kramers-Kronig (KK) technique. The reflectivity of pristine MTF measured using UV-VIS-NIR spectrophotometry is used as an input parameter in the KK technique to determine the optical constants as a function of energy [or wavelength (λ)] of incident light ranging between ∼1–4.96 eV (or 250–1,200 nm). For the irradiated MTF, the optical constants including the skin depth (δ = λ/2πk), optical conductivity (σ = nkc/λ), and dielectric constants (ϵ1 = n2 − k2 and ϵ2 = 2nk) with varying ion fluence have been investigated by implementing the Maxwell-Garnett (MG) approximation, used to determine the effective dielectric constants of a random mixture of two different mediums. Additionally, n and k obtained from MG approximation have been compared with those obtained using the pseudo- Brewster angle technique for four different laser wavelengths (405, 532, 632.8 and 670 nm) and are found to be in good agreement with each other. It is observed that the optical constants and optical conductivity of the MTF decrease with increase in ion beam fluence, while the skin depth increases. Besides the optical constants, the behavior of skin depth, dielectric constants, and optical conductivity of the irradiated MTF with varying fluence are discussed in this article.

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

Importance of Internal Ion Beam Parameters on the Self-organized Pattern Formation with Low-energy Broad Beam Ion Sources

2009 ◽  
Vol 1181 ◽  
Author(s):  
Marina I Cornejo ◽  
Bashkim Ziberi ◽  
Michael Tartz ◽  
Horst Neumann ◽  
Frank Frost ◽  
...  
Keyword(s):  
Angular Distribution ◽  
Surface Topography ◽  
Incidence Angle ◽  
Ion Beam ◽  
Plasma Sheath ◽  
Low Energy ◽  
Optical Parameters ◽  
Broad Beam ◽  
Beam Parameters ◽  
Total Voltage

AbstractThe low energy ion beam erosion of solid surfaces is a simple bottom-up approach for the generation of nanostructures. For certain sputtering conditions caused by self-organization processes well ordered nanostructures on the surface like one-dimensional ripples or regular arrays of dots can be formed [1]. Using broad beam sources, the low energy ion beam erosion can be a cost-efficient method to produce large-area nanostructured surfaces in a one-step process.The processes involved have been studied in the last decades and the pattern formation is attributed to the competition of curvature dependant sputtering and various relaxation mechanisms. It is also well known that the ion beam incidence angle (the angle between the sample surface normal and the axis of the beam source) is one critical parameter that determines the surface topography. However, inherent to all broad beam sources, the ion beam exhibits a certain divergence, i.e. the ion trajectories are not parallel to each other. This generates a spread of the local incidence angle with respect to the geometrically defined beam incidence angle.Recent studies showed that the divergence angle and angular distribution of the ions, here called internal beam parameters, also affect the surface topography [2].The angular distribution can be controlled by the total voltage applied on the geometrical defined ion optical system of the broad beam ion source. For the given multi-aperture two-grid ion optical system the total voltage is the sum of the voltages applied to the first (screen) and second (accelerator) grid. This total voltage, together with the geometrical characteristics of the used grid systems, including the shape of the plasma sheath boundary at the screen grid, define the overall ion-optical parameters of the source, i. e. the divergence angle and angular distribution of the ions within the beam.In this contribution a first approach of the effect of the internal beam parameters on the surface topography is presented. It was analyzed the effect on the topography on Si surfaces of some experimental parameters that affect the internal beam parameters by changing the ion-optical parameters and the shape of the plasma sheath boundary. Explicitly, the influence of the discharge voltage, the operation time and the distance between the screen and accelerator grid is shown.[1] B. Ziberi, M. Cornejo, F. Frost, B. Rauschenbach, J. Phys.: Condens. Matter (submitted).[2] B. Ziberi, F. Frost, M. Tartz, H. Neumann, B. Rauschenbach, Appl. Phys. Lett. 92, 063102 (2008)

Gas Cluster Ion Beam Technology for Nano-Fabrication

2012 ◽  
Vol 82 ◽  
pp. 1-8
Author(s):  
Noriaki Toyoda ◽  
Isao Yamada
Keyword(s):  
Ion Beam ◽  
Surface Region ◽  
Local Area ◽  
Industrial Applications ◽  
Ion Beams ◽  
Low Energy ◽  
Cluster Ions ◽  
Nano Fabrication ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam

A gas cluster is an aggregate of a few to several thousands of gaseous atoms or molecules, and it can be accelerated to a desired energy after ionization. Since the kinetic energy of an atom in a cluster is equal to the total energy divided by the cluster size, a quite-low-energy ion beam can be realized. Although it is difficult to obtain low-energy monomer ion beams due to the space charge effect, equivalently low-energy ion beams can be realized by using cluster ion beams at relatively high acceleration voltages. Not only the low-energy feature but also the dense energy depositions at a local area are important characteristics of the irradiation by gas cluster ions. All of the impinging energy of a gas cluster ion is deposited at the surface region, and this dense energy deposition is the origin of enhanced sputtering yields, crater formation, shockwave generation, and other non-linear effects. GCIBs are being used for industrial applications where a nano-fabrication process is required. Surface smoothing, shallow doping, low-damage etching, trimming, and thin-film formations are promising applications of GCIBs. In this paper, fundamental irradiation effects of GCIB are discussed from the viewpoint of low-energy irradiation, sputtering, and dense energy depositions. Also, various applications of GCIB for nano-fabrications are explained.

The Promotion of Silicide Formation using a Scanned Silicon Ion Beam

1988 ◽  
Vol 100 ◽  
Author(s):  
E. J. Williams ◽  
E. G. Bithell ◽  
C. B. Boothroyd ◽  
W. M. Stobbs ◽  
R. J. Young ◽  
...  
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Ion Beams ◽  
Low Energy ◽  
Subsequent Annealing ◽  
Silicide Formation ◽  
Argon Ion

ABSTRACTThe promotion of silicide reactions at the interface between silicon and a metal overlayer is described, the reactions being initiated by scanned ion beams. The relative effects of low and high energy Si+ and Si2+ beams are discussed and the results of subsequent annealing are compared with those seen when using low energy (5keV) argon ion beams. The implications for the writing of metallisation lines are also noted.

scholarly journals Focused Ion Beams. Thin Film Growth by Low Energy Focused Ion Beam.

Hyomen Kagaku ◽  
1995 ◽  
Vol 16 (12) ◽  
pp. 724-728
Author(s):  
Shinji NAGAMACHI ◽  
Masahiro UEDA ◽  
Junzo ISHIKAWA
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Thin Film Growth ◽  
Focused Ion Beams

Low Energy Implantation of Boron with Decaborane Ions

2000 ◽  
Vol 610 ◽  
Author(s):  
Maria A. Albano ◽  
Vijay Babaram ◽  
John M. Poate ◽  
Marek Sosnowski ◽  
Dale C. Jacobson
Keyword(s):  
Ion Beam ◽  
Molecular Ions ◽  
Ion Beams ◽  
Ion Source ◽  
Low Energy ◽  
Beam Deflection ◽  
Nuclear Reaction Analysis ◽  
Low Energies ◽  
Beam Currents ◽  
P Type

AbstractFormation of p-type shallow junctions for future generations of Si devices will require ion implantation of B at very low energies (< 1 keV). An alternative to implantation of monomer ions at very low energy is implantation of large molecular ions at a higher energy. In an ion beam of decaborane (B10H14) each of the B atoms carries only 9% of the ion kinetic energy. We have examined ionization properties of decaborane and built an experimental ion source and an implantation apparatus with magnetic mass analysis. Analyzed decaborane ion beams with energies from 2 to 10 keV and beam currents of several microamperes were obtained. Si samples were implanted with decaborane ions and the implanted dose measured by current integration was compared with B content obtained by nuclear reaction analysis. Experiments with electrostatic beam deflection show that the large ions survive the transport in the implanter environment and that neutralization is negligible. During implantation, the retained B dose is reduced in comparison with the nominal implanted dose due to sputtering. Dose loss is greater at 200 eV compared to 500 eV. The properties of decaborane ion beams and the prospects of using them for shallow implantation of B into Si are discussed.

scholarly journals Modulation of continuous ion beams with low drift velocity by induced wakefield in background plasmas

2013 ◽  
Vol 31 (1) ◽  
pp. 135-140 ◽  
Author(s):  
Zhang-Hu Hu ◽  
Yuan-Hong Song ◽  
Yong-Tao Zhao ◽  
You-Nian Wang
Keyword(s):  
Density Gradient ◽  
Ion Beam ◽  
Ion Beams ◽  
Propagation Direction ◽  
Low Energy ◽  
Longitudinal Compression ◽  
Phase Lock ◽  
Particle In Cell ◽  
Short Beam ◽  
Low Drift

AbstractTwo-dimensional particle-in-cell simulations are performed to investigate the propagation of low energy continuous ion beams through background plasmas. It is shown that the continuous ion beam can be modulated into periodic short beam pulses by the induced wakefield, which can be adopted as a method to produce ultrashort ion beam pulses. Furthermore, the transport of the continuous ion beam in plasma with density gradient in the beam propagation direction is proposed and an enhanced longitudinal compression by density gradient is found due to the phase lock of ion pulses in the focusing regions of wakefield and reduced heating of plasma electrons.

In Situ Parametric Investigation of the Mechanism of Diamond Film Deposition from Low Energy Ion Beams

1988 ◽  
Vol 128 ◽  
Author(s):  
Y. Lifshitz ◽  
S. R. Kasi ◽  
J. W. Rabalais
Keyword(s):  
Diamond Film ◽  
Carbon Deposition ◽  
Ion Beam ◽  
General Scheme ◽  
Ion Beams ◽  
Film Deposition ◽  
Low Energy ◽  
Trapping Efficiency ◽  
Local Concentration

ABSTRACTA general scheme for the analysis of deposition from hyperthermal (10–5000 eV) species is presented. Successful deposition involves consideration of species range, maximum local concentration obtainable, trapping efficiency, radiation damage, and sputtering efficiency. Examples of in situ parametric investigations of carbon deposition performed with a controlled mass selected UHV ion beam facility are presented. A subplantation model for diamond film deposition is discussed. XRD evidence for epitaxial growth of diamond(111) on Si(111) is provided.

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