Importance of Internal Ion Beam Parameters on the Self-organized Pattern Formation with Low-energy Broad Beam Ion Sources

2009 ◽  
Vol 1181 ◽  
Author(s):  
Marina I Cornejo ◽  
Bashkim Ziberi ◽  
Michael Tartz ◽  
Horst Neumann ◽  
Frank Frost ◽  
...  
Keyword(s):  
Angular Distribution ◽  
Surface Topography ◽  
Incidence Angle ◽  
Ion Beam ◽  
Plasma Sheath ◽  
Low Energy ◽  
Optical Parameters ◽  
Broad Beam ◽  
Beam Parameters ◽  
Total Voltage

AbstractThe low energy ion beam erosion of solid surfaces is a simple bottom-up approach for the generation of nanostructures. For certain sputtering conditions caused by self-organization processes well ordered nanostructures on the surface like one-dimensional ripples or regular arrays of dots can be formed [1]. Using broad beam sources, the low energy ion beam erosion can be a cost-efficient method to produce large-area nanostructured surfaces in a one-step process.The processes involved have been studied in the last decades and the pattern formation is attributed to the competition of curvature dependant sputtering and various relaxation mechanisms. It is also well known that the ion beam incidence angle (the angle between the sample surface normal and the axis of the beam source) is one critical parameter that determines the surface topography. However, inherent to all broad beam sources, the ion beam exhibits a certain divergence, i.e. the ion trajectories are not parallel to each other. This generates a spread of the local incidence angle with respect to the geometrically defined beam incidence angle.Recent studies showed that the divergence angle and angular distribution of the ions, here called internal beam parameters, also affect the surface topography [2].The angular distribution can be controlled by the total voltage applied on the geometrical defined ion optical system of the broad beam ion source. For the given multi-aperture two-grid ion optical system the total voltage is the sum of the voltages applied to the first (screen) and second (accelerator) grid. This total voltage, together with the geometrical characteristics of the used grid systems, including the shape of the plasma sheath boundary at the screen grid, define the overall ion-optical parameters of the source, i. e. the divergence angle and angular distribution of the ions within the beam.In this contribution a first approach of the effect of the internal beam parameters on the surface topography is presented. It was analyzed the effect on the topography on Si surfaces of some experimental parameters that affect the internal beam parameters by changing the ion-optical parameters and the shape of the plasma sheath boundary. Explicitly, the influence of the discharge voltage, the operation time and the distance between the screen and accelerator grid is shown.[1] B. Ziberi, M. Cornejo, F. Frost, B. Rauschenbach, J. Phys.: Condens. Matter (submitted).[2] B. Ziberi, F. Frost, M. Tartz, H. Neumann, B. Rauschenbach, Appl. Phys. Lett. 92, 063102 (2008)

scholarly journals Sputtering of silicon nanopowders by an argon cluster ion beam

2019 ◽  
Vol 10 ◽  
pp. 135-143 ◽  
Author(s):  
Xiaomei Zeng ◽  
Vasiliy Pelenovich ◽  
Zhenguo Wang ◽  
Wenbin Zuo ◽  
Sergey Belykh ◽  
...  
Keyword(s):  
Energy Dependence ◽  
Ion Beam ◽  
Finite Size ◽  
Low Energy ◽  
Finite Size Effect ◽  
Target Density ◽  
Cluster Ion ◽  
Sputtering Yield ◽  
Beam Parameters ◽  
Silicon Nanopowders

In this work an Ar+ cluster ion beam with energy in the range of 10–70 keV and dose of 7.2 × 1014–2.3 × 1016 cluster/cm2 was used to irradiate pressed Si nanopowder targets consisting of particles with a mean diameter of 60 nm. The influence of the target density and the cluster ion beam parameters (energy and dose) on the sputtering depth and sputtering yield was studied. The sputtering yield was found to decrease with increasing dose and target density. The energy dependence demonstrated an unusual non-monotonic behavior. At 17.3 keV a maximum of the sputtering yield was observed, which was more than forty times higher than that of the bulk Si. The surface roughness at low energy demonstrates a similar energy dependence with a maximum near 17 keV. The dose and energy dependence of the sputtering yield was explained by the competition of the finite size effect and the effect of debris formation.

scholarly journals Optical Parameters of Atomically Heterogeneous Systems Created by Plasma Based Low Energy Ion Beams: Wavelength Dependence and Effective Medium Model

2021 ◽  
Vol 9 ◽  
Author(s):  
Krishn Pal Singh ◽  
Sudeep Bhattacharjee
Keyword(s):  
Optical Conductivity ◽  
Optical Constants ◽  
Ion Beam ◽  
Incident Light ◽  
Input Parameter ◽  
Ion Beams ◽  
Skin Depth ◽  
Dielectric Constants ◽  
Low Energy ◽  
Optical Parameters

The article presents the irradiation effects of low energy (∼0.5 keV) inert gaseous Argon ion beams on optical constants [real (n) and imaginary (k) parts of the refractive index], dielectric constants, skin depth, and optical conductivity of copper (Cu), silver (Ag), and aluminum (Al) metallic thin films (MTF). The optical constants of pristine MTF are obtained by employing the universal Kramers-Kronig (KK) technique. The reflectivity of pristine MTF measured using UV-VIS-NIR spectrophotometry is used as an input parameter in the KK technique to determine the optical constants as a function of energy [or wavelength (λ)] of incident light ranging between ∼1–4.96 eV (or 250–1,200 nm). For the irradiated MTF, the optical constants including the skin depth (δ = λ/2πk), optical conductivity (σ = nkc/λ), and dielectric constants (ϵ1 = n2 − k2 and ϵ2 = 2nk) with varying ion fluence have been investigated by implementing the Maxwell-Garnett (MG) approximation, used to determine the effective dielectric constants of a random mixture of two different mediums. Additionally, n and k obtained from MG approximation have been compared with those obtained using the pseudo- Brewster angle technique for four different laser wavelengths (405, 532, 632.8 and 670 nm) and are found to be in good agreement with each other. It is observed that the optical constants and optical conductivity of the MTF decrease with increase in ion beam fluence, while the skin depth increases. Besides the optical constants, the behavior of skin depth, dielectric constants, and optical conductivity of the irradiated MTF with varying fluence are discussed in this article.

Process Prediction for Low-Energy Ion Beam Figuring Based on BH Modified Model

2013 ◽  
Vol 552 ◽  
pp. 238-243
Author(s):  
Zhi Chao Wang ◽  
Hua Dong Yu ◽  
Da Seng Wang ◽  
Chun Yang Wang
Keyword(s):  
Incident Energy ◽  
Ion Beam ◽  
Low Energy ◽  
The Self ◽  
Contact Method ◽  
Optical Surfaces ◽  
Self Organized ◽  
Beam Parameters ◽  
Ion Beam Figuring ◽  
Ripple Pattern

Ultra-smooth optical surfaces are very important in widely fields. They’re not only used in optics, but also in the electronics. Ultra-smooth surfaces are difficult to process, because the rms is less than 1nm. The process methods have Teflon Polishing, Float Polishing (FP), Magnetorheological Finishing (MRF) and Ion Beam Figuring (IBF) etc. Compared with conventional polishing, IBF have higher processing quality and efficiency. Low-energy (<2Kev) IBF can form the self-organized nanopatterns on optical surfaces. Since IBF is a non-contact method; there is no edge effect during the process. We can change the ion beam parameters to get dot or ripple pattern on substrate. Only the self-organized ripple pattern is discussed in the paper. For the prediction of process parameters, the principle theories Sigmund theory and BH model are used the interplay between the angle of ion beam incidence, ion flux, incident energy and substrate temperature leads to the self-assembly, which are considered by these theory. In this paper the angle of incidence and incident energy are mainly researched on. Processing nanopatterns on Si has been simulated by SRIM program with these theory and the results reveal several laws in the process. It is believed that these laws will help us to well predict the ion beam parameters and lead IBE experiments.

Topographic Kinetics and Practice of Low Angle Ion Beam Thinning

1991 ◽  
Vol 254 ◽  
Author(s):  
Árpád Barna
Keyword(s):  
Surface Topography ◽  
Incidence Angle ◽  
Ion Beam ◽  
Sample Surface ◽  
Geometrical Model ◽  
Ion Beam Etching ◽  
Reasonable Time ◽  
Beam Density ◽  
Wide Range ◽  
Simple Geometrical Model

AbstractThe thinning technique is based on a simple geometrical model, describing the changes in the surface topography during ion beam etching. A high ion beam density makes jt possible that a thinning with an incidence angle of 0.5–7° ( measured from the sample surface) can take place within a reasonable time. Our method is applicable to a wide range of materials and to XTEM preparation.

Xtem Sample Preparation for Failure Analysis in Semiconductor Devices Using High Energy Ion Beam Thinning

1997 ◽  
Vol 480 ◽  
Author(s):  
E. Bugiel
Keyword(s):  
Sample Preparation ◽  
Incidence Angle ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
High Energy ◽  
Low Energy ◽  
Ion Current ◽  
Preparation Time ◽  
Mechanical Preparation ◽  
Fast Ion

AbstractXTEM investigations are an important tool to characterize the geometry, structure and microchemical composition of semiconductor devices. Over the last 25 years, several thinning procedures have been used, based on Ar ions at about 5 kV. Common to all of them is that the thinning takes several hours, or the ion thinning has to be combined with awkward mechanical preparation steps, like dimpling.The technique described below uses Ar ions up to 15 keV and with a total ion current of up to 0.2 mA. A maximum sputtering rate of 25 μm/h for Si is reached at an incidence angle of 6°. A low energy thinning step at 3.5 keV is used at the end to reduce the amorphization and heating of the thinnest regions. The combination of this fast ion thinning with simpler mechanical steps requiring only a final lapping step, without the need for dimpling and polishing, results in a yield of nearly 100% and a preparation time of about 3h.

Effects of Ion Beam Milling on Surface Topography

1973 ◽  
Vol 31 ◽  
pp. 84-85
Author(s):  
P.G. Pawar ◽  
P. Duhamel ◽  
G.W. Monk
Keyword(s):  
Surface Topography ◽  
Ion Beam ◽  
Solid Material ◽  
Beam Current ◽  
Atomic Mass ◽  
Micro Milling ◽  
Ion Milling ◽  
Controlled Atmospheres ◽  
Milling Operations ◽  
Sufficient Energy

A beam of ions of mass greater than a few atomic mass units and with sufficient energy can remove atoms from the surface of a solid material at a useful rate. A system used to achieve this purpose under controlled atmospheres is called an ion miliing machine. An ion milling apparatus presently available as IMMI-III with a IMMIAC was used in this investigation. Unless otherwise stated, all the micro milling operations were done with Ar+ at 6kv using a beam current of 100 μA for each of the two guns, with a specimen tilt of 15° from the horizontal plane.It is fairly well established that ion bombardment of the surface of homogeneous materials can produce surface topography which resembles geological erosional features.

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

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