scholarly journals Boehm Titration Revisited (Part II): A Comparison of Boehm Titration with Other Analytical Techniques on the Quantification of Oxygen-Containing Surface Groups for a Variety of Carbon Materials

2018 ◽  
Vol 4 (2) ◽  
pp. 22 ◽  
Author(s):  
Jan Schönherr ◽  
Johannes Buchheim ◽  
Peter Scholz ◽  
Philipp Adelhelm
2002 ◽  
Vol 248 (1) ◽  
pp. 116-122 ◽  
Author(s):  
M. Domingo-García ◽  
F.J. López Garzón ◽  
M.J. Pérez-Mendoza

Tehnika ◽  
2020 ◽  
Vol 75 (6) ◽  
pp. 545-552
Author(s):  
Olivera Lužanin ◽  
Aleksandra Janošević-Ležaić ◽  
Nemanja Gavrilov

The aim of this work is to investigate the capacitive characteristics of carbon-based materials obtained by carbonization of electrochemically synthesized gels based on alginate (CA-i, CA-3i, CA-3n), chitosan (CH-i), as well as their composites (CHA-i) using cyclic voltammetry at different polarization rates. The capacitance characteristics of the examined materials were tested in 6M KOH and 0.5M H2SO4, The specific capacities of the tested materials, in an acidic medium, at a polarization rate of 2 mV / s, decrease according to the following sequence: C-A-i> C-HA-i> C-A-3i> C-A-3n> C-H-i, where the maximum value of the specific capacity is 362 F / g. Also, based on the obtained results, a large decrease in capacity was observed, accompanied by an increase in the speed of polarization of the working electrode. The capacitance properties were successfully separated using the Trasatti and Dunn methods, and the results of both methods are largely consistent. It has been shown that the dominant form of energy storage through Faraday reactions, ie the share of pseudocapacitance, is large in all materials. The highest share of double-layer capacity in acidic medium was recorded in C-H-i, while in the base medium the largest share of double-layer capacity was present in material C-A-3n, due to the fact that electrochemical activity of surface groups (oxygen and / or nitrogen) is pH-dependent.


Author(s):  
R. E. Herfert

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.


Author(s):  
R.W. Horne

The technique of surrounding virus particles with a neutralised electron dense stain was described at the Fourth International Congress on Electron Microscopy, Berlin 1958 (see Home & Brenner, 1960, p. 625). For many years the negative staining technique in one form or another, has been applied to a wide range of biological materials. However, the full potential of the method has only recently been explored following the development and applications of optical diffraction and computer image analytical techniques to electron micrographs (cf. De Hosier & Klug, 1968; Markham 1968; Crowther et al., 1970; Home & Markham, 1973; Klug & Berger, 1974; Crowther & Klug, 1975). These image processing procedures have allowed a more precise and quantitative approach to be made concerning the interpretation, measurement and reconstruction of repeating features in certain biological systems.


Author(s):  
Simon Thomas

Trends in the technology development of very large scale integrated circuits (VLSI) have been in the direction of higher density of components with smaller dimensions. The scaling down of device dimensions has been not only laterally but also in depth. Such efforts in miniaturization bring with them new developments in materials and processing. Successful implementation of these efforts is, to a large extent, dependent on the proper understanding of the material properties, process technologies and reliability issues, through adequate analytical studies. The analytical instrumentation technology has, fortunately, kept pace with the basic requirements of devices with lateral dimensions in the micron/ submicron range and depths of the order of nonometers. Often, newer analytical techniques have emerged or the more conventional techniques have been adapted to meet the more stringent requirements. As such, a variety of analytical techniques are available today to aid an analyst in the efforts of VLSI process evaluation. Generally such analytical efforts are divided into the characterization of materials, evaluation of processing steps and the analysis of failures.


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