Recent Studies on the Fabrication of Multilayer Films by Magnetron Sputtering and Their Irradiation Behaviors

Multilayer films with high-density layer interfaces have been studied widely because of the unique mechanical and functional properties. Magnetron sputtering is widely chosen to fabricate multilayer films because of the convenience in controlling the microstructure. Essentially, the properties of multilayer films are decided by the microstructure, which could be adjusted by manipulating the deposition parameters, such as deposition temperature, rate, bias, and target–substrate distance, during the sputter process. In this review, the influences of the deposition parameters on the microstructure evolution of the multilayer films have been summarized. Additionally, the impacts of individual layer thickness on the microstructure evolution as well as the irradiation behavior of various multilayer films have been discussed.

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Modulation Structure and Superhardness Effect of VC/TiN Nano-Multilayer Films

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.184-185.1080 ◽

2012 ◽

Vol 184-185 ◽

pp. 1080-1083

Author(s):

Jian Ling Yue ◽

Wei Shi ◽

Ge Yang Li

Keyword(s):

Elastic Modulus ◽

Magnetron Sputtering ◽

Layer Thickness ◽

Coherent Structure ◽

Multilayer Films ◽

Critical Layer ◽

Maximum Hardness ◽

Critical Layer Thickness ◽

The Relationship

A series of VC/TiN nano-multilayer films with various TiN layer thicknesses were synthesized by magnetron sputtering method. The relationship between the modulation structure and superhardness effect of the multilayer films were investigated. The results reveal that TiN below a critical layer thickness grows coherently with VC layers in multilayers. Correspondingly, the hardness and elastic modulus of the multilayers increase significantly. The maximum hardness and modulus achieved in these multilayers is 40.7GPa and 328GPa.With further increase in the TiN layer thickness, coherent structure of multilayers are destroyed, resulting in a remarkable decrease of hardness and modulus. The superhardness effect of multilayers is related to the three directional strains generated from the coherent structure.

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Conductivity of Yittria-Stabilized Zirconia Nanostructure Electrolyte for Solid Oxide Fuel Cell Application by Using RF Magnetron Sputtering

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.268.352 ◽

2017 ◽

Vol 268 ◽

pp. 352-357

Author(s):

S.Y. Jaffar ◽

Yussof Wahab ◽

Rosnita Muhammad ◽

Z. Othaman ◽

Zuhairi Ibrahim ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Magnetron Sputtering ◽

Rf Magnetron Sputtering ◽

Stabilized Zirconia ◽

Deposition Parameter ◽

Deposition Parameters ◽

Ysz Thin Film ◽

Temperature Rate ◽

Lower Temperature

Yttria-stabilized zirconia (YSZ) thin films were deposited successfully using RF magnetron sputtering. The substrate had been used are sapphire glass. A pure ceramic of Zr-Y is synthesized and processed into a planar magnetron target which is reactively sputtered with an Argon-Oxygen gas mixture to form Zr-Y-O nanostructure. The aim of this research is to study the conductivity and roughness YSZ thin film by using RF magnetron sputtering by varying the temperature deposition parameter. By lowering the YSZ thin film into nanostructure would enable for SOFC to be operate at lower temperature below 400°C. The YSZ nanostructure were controlled by varying the deposition parameters, including the deposition temperature and the substrate used. The crystalline of YSZ structure at 100W and temperature 300°C. The surface morphology of the films proved that at 300°C temperature rate deposition showed optimum growth morphology and density of YSZ thin films. Besides, the high deposition subtrate temperature affected the thickness of YSZ thin film at 80nm by using surface profiler. A higher rate of deposition is achievable when the sputtering mode of the Zr-Y target is metallic as opposed to oxide. YSZ is synthesizing to obtain the optimum thin film for SOFC application.

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Ultrasmooth, Conducting Films Composed of Mo/Si Multilayers

MRS Proceedings ◽

10.1557/proc-403-183 ◽

1995 ◽

Vol 403 ◽

Cited By ~ 4

Author(s):

D. G. Stearns ◽

S. L. Baker ◽

M. A. Wall

Keyword(s):

Electron Transport ◽

Magnetron Sputtering ◽

Layer Thickness ◽

Multilayer Films

AbstractWe investigate the variation of microstructure and electron transport with layer thickness in Mo/Si multilayer films deposited by magnetron sputtering.

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Microstructure, Mechanical Properties and Thermal Stability of TiAlN/Si3N4 Nano-Multilayer Films Deposited by Reactive Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.79-82.489 ◽

2009 ◽

Vol 79-82 ◽

pp. 489-492

Author(s):

Jiang Ling Yue ◽

Yan Sheng Yin ◽

Ge Yang Li

Keyword(s):

Mechanical Properties ◽

Magnetron Sputtering ◽

Layer Thickness ◽

Multilayer Films ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron ◽

X Ray Diffraction ◽

X Ray ◽

Si3n4 Layer ◽

Superlattice Structure

A series of TiAlN/Si3N4 nano-multilayer films with various Si3N4 layer thicknesses were prepared by reactive magnetron sputtering. These multilayers were then annealed at temperatures ranging from 600 to 900°C in air for 1 hour. The composition, microstructure, and mechanical properties of the films were characterized by energy dispersive x-ray spectroscopy, x-ray diffraction, scanning electron microscopy, and nanoindentation. It reveals that under the template effect of TiAlN layers in multilayers, as-deposited amorphous Si3N4 is crystallized and grows coherently with TiAlN layers when Si3N4 layer thickness is below 0.6 nm. Correspondingly, the hardness and elastic modulus of the multilayers increase significantly. With further increase in the layer thickness, Si3N4 transforms into amorphous, resulting in a decrease of hardness and modulus. The TiAlN/Si3N4 nano-multilayers could retain their superlattice structure even up to 900°C. The small decrease in the hardness of multilayers annealed below 800°C was correlated to the release of compressive stress in multilayers. However, oxidation was found on the surface of multilayers when annealed at 800°C, which resulted in a marked decrease in the hardness of multilayers. The multilayers presented higher hardness as compared with the monolithic TiAlN film.

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Hardening Mechanisms of Amorphous / Polycrystalline Nanostructured Multilayer Films: Si3N4/CrN and Si3N4/TiN

MRS Proceedings ◽

10.1557/proc-750-y5.7 ◽

2002 ◽

Vol 750 ◽

Author(s):

Junhua Xu ◽

Lihua Yu ◽

Yasushi Azuma ◽

Koichiro Hattori ◽

Toshiyuki Fujimoto ◽

...

Keyword(s):

Substrate Temperature ◽

Layer Thickness ◽

Deposition Temperature ◽

Multilayer Films ◽

Thickness Ratio ◽

Reactive Magnetron ◽

Maximum Hardness ◽

Layer Thickness Ratio ◽

Hardening Mechanisms ◽

Hardness Values

ABSTRACTThe amorphous/polycrystalline Si3N4/CrN and Si3N4/TiN nano-structured multilayer films have been fabricated by RF reactive magnetron sputtering. The microstructure and properties of these films were measured by XRD, HRTEM and nano-indenter There is no superhardness effect in the Si3N4/CrN multilayers. The hardness values of Si3N4/CrN multilayers are between those of the constituent CrN and Si3N4 films at a substrate temperature of 20∼C, and are a little higher than those of Si3N4 films at a deposition temperature of 500°C. However, the superhardness effect was found in Si3N4/ TiN multilayers. The hardness of Si3N4/ TiN multilayers is affected not only by modulation periods, but also by layer thickness ratio and deposition temperature. The maximum hardness value is about 40% higher than the value calculated from the rule of mixtures at a deposition temperature of 500°C and a layer thickness ratio (lSi3N4/ lTiN) of 3 / 1. Based on experimental results, the hardening mechanisms in these multilayers have been discussed.

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Conduction Properties of SiN Films Depositing by RF Magnetron Sputtering

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.568-570.1658 ◽

2014 ◽

Vol 568-570 ◽

pp. 1658-1661

Author(s):

Zai Yu Zhang ◽

Jian Jun Yang ◽

Yan Hui Wu

Keyword(s):

Magnetron Sputtering ◽

Substrate Temperature ◽

Deposition Temperature ◽

Rf Magnetron Sputtering ◽

Optimal Parameters ◽

Power Deposition ◽

Deposition Parameters ◽

Sputtering Power ◽

Conduction Properties

In the work, the resistivity of the SiN film was discussed, the resistivity of the SiN film was influenced by the deposition parameters, such as the sputtering power, deposition temperature, N2 pressure and ratio of N2/(N2+Ar). Only considering the resistivity of the SiN film, the optimal parameters of the film were as below, the sputtering power was 50W, the substrate temperature was 400°C, N2 pressure was 1Pa, and the ratio of N2/(N2+Ar) was 2.5%.

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